Inventor · disambiguated record
Keith A. Joyner
Also filed as: JOYNER KEITH · JOYNER KEITH A · JOYNER KEITH ALAN
28 granted patents·3 pending applications·1,128 citations·filing 1982–2021
97Inventor score
Top patents by PatentIndex Score
31 records- 0198US6737347B1Semiconductor device with fully self-aligned local interconnects, and method for fabricating the deviceTEXAS INSTRUMENTS INC·Filed 2000·Granted May 18, 2004·214 cites·7 claims
- 0294US6806151B2Methods and apparatus for inducing stress in a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 19, 2004·74 cites·6 claims
- 0393US5863827AOxide deglaze before sidewall oxidation of mesa or trenchTEXAS INSTRUMENTS INC·Filed 1997·Granted Jan 26, 1999·155 cites·17 claims
- 0487US6376285B1Annealed porous silicon with epitaxial layer for SOITEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 23, 2002·84 cites·8 claims
- 0587US5364800AVarying the thickness of the surface silicon layer in a silicon-on-insulator substrateTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 15, 1994·83 cites·20 claims
- 0682US6118161ASelf-aligned trenched-channel lateral-current-flow transistorTEXAS INSTRUMENTS INC·Filed 1998·Granted Sep 12, 2000·43 cites·8 claims
- 0781US6207511B1Self-aligned trenched-channel lateral-current-flow transistorTEXAS INSTRUMENTS INC·Filed 2000·Granted Mar 27, 2001·24 cites·13 claims
- 0878US5909628AReducing non-uniformity in a refill layer thickness for a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 1997·Granted Jun 1, 1999·54 cites·31 claims
- 0976US6004871AImplant enhancement of titanium silicidationTEXAS INSTRUMENTS INC·Filed 1997·Granted Dec 21, 1999·38 cites·18 claims
- 1074US5882981AMesa isolation Refill Process for Silicon on Insulator Technology Using Flowage Oxides as the Refill MaterialTEXAS INSTRUMENTS INC·Filed 1997·Granted Mar 16, 1999·49 cites·8 claims
- 1172US6376859B1Variable porosity porous silicon isolationTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 23, 2002·40 cites·13 claims
- 1270US6228747B1Organic sidewall spacers used with resistTEXAS INSTRUMENTS INC·Filed 1999·Granted May 8, 2001·36 cites·6 claims
- 1368US6214699B1Method for forming an isolation structure in a substrateTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 10, 2001·35 cites·17 claims
- 1467US6767777B2Method for manufacturing and structure for transistors with reduced gate to contact spacing including etching to thin the spacersTEXAS INSTRUMENTS INC·Filed 2002·Granted Jul 27, 2004·12 cites·14 claims
- 1567US6114741ATrench isolation of a CMOS structureTEXAS INSTRUMENTS INC·Filed 1997·Granted Sep 5, 2000·29 cites·23 claims
- 1667US5548149AVarying the thickness of the surface silicon layer in a silicon-on-insulator substrateTEXAS INSTRUMENTS INC·Filed 1994·Granted Aug 20, 1996·30 cites·5 claims
- 1766US4507851AProcess for forming an electrical interconnection system on a semiconductorTEXAS INSTRUMENTS INC·Filed 1982·Granted Apr 2, 1985·28 cites·4 claims
- 1865US5429955AMethod for constructing semiconductor-on-insulatorTEXAS INSTRUMENTS INC·Filed 1992·Granted Jul 4, 1995·41 cites·12 claims
- 1957US11570957B2Adjustable, controlled rate plant watering deviceJOYNER KEITH ALAN·Filed 2021·Granted Feb 7, 2023·0 cites·14 claims
- 2055US7101772B2Means for forming SOITEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 5, 2006·6 cites·14 claims
- 2149US6057214ASilicon-on-insulation trench isolation structure and method for formingTEXAS INSTRUMENTS INC·Filed 1997·Granted May 2, 2000·16 cites·15 claims
- 2245US7339214B2Methods and apparatus for inducing stress in a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 4, 2008·0 cites·13 claims
- 2345US5982006AActive silicon-on-insulator region having a buried insulation layer with tapered edgeTEXAS INSTRUMENTS INC·Filed 1997·Granted Nov 9, 1999·11 cites·13 claims
- 2442US7459734B2Method for manufacturing and structure for transistors with reduced gate to contact spacingTEXAS INSTRUMENTS INC·Filed 2004·Granted Dec 2, 2008·0 cites·11 claims
- 2541US2004192027A1Semiconductor device with fully self-aligned local interconnects, and method for fabricating the deviceFiled 2004·Application pending·0 cites
- 2640US2004169236A1Process to improve Nwell-Nwell isolation with a blanket low dose high energy implantTEXAS INSTRUMENTS INC·Filed 2004·Application pending·0 cites
- 2738US6180491B1Isolation structure and methodTEXAS INSTRUMENTS INC·Filed 1999·Granted Jan 30, 2001·6 cites·8 claims
- 2838US2002086499A1Process to improve Nwell-Nwell isolation with a blanket low dose high energy implantFiled 2001·Application pending·0 cites
- 2937US5440132ASystems and methods for controlling the temperature and uniformity of a wafer during a SIMOX implantation processTEXAS INSTRUMENTS INC·Filed 1994·Granted Aug 8, 1995·13 cites·20 claims
- 3035US5352341AReducing leakage current in silicon-on-insulator substratesTEXAS INSTRUMENTS INC·Filed 1993·Granted Oct 4, 1994·7 cites·11 claims
- 3130US6171969B1Uniform dopant distribution for mesas of semiconductorsTEXAS INSTRUMENTS INC·Filed 1999·Granted Jan 9, 2001·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →