Inventor · disambiguated record
Kensuke Kasahara
Also filed as: KASAHARA KENSUKE
15 granted patents·1 pending application·662 citations·filing 1987–2006
95Inventor score
Top patents by PatentIndex Score
16 records- 0196US6492669B2Semiconductor device with schottky electrode having high schottky barrierNEC CORP·Filed 2001·Granted Dec 10, 2002·134 cites·20 claims
- 0295US7800131B2Field effect transistorNEC CORP·Filed 2006·Granted Sep 21, 2010·48 cites·17 claims
- 0395US6465814B2Semiconductor deviceNEC CORP·Filed 2001·Granted Oct 15, 2002·104 cites·24 claims
- 0494US7863648B2Field effect transistorNEC CORP·Filed 2006·Granted Jan 4, 2011·38 cites·15 claims
- 0591US6552373B2Hetero-junction field effect transistor having an intermediate layerNEC CORP·Filed 2001·Granted Apr 22, 2003·65 cites·20 claims
- 0690US6765241B2Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitancesNEC CORP·Filed 2001·Granted Jul 20, 2004·54 cites·10 claims
- 0789US6441391B1Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrateNEC CORP·Filed 2001·Granted Aug 27, 2002·52 cites·3 claims
- 0879US6476431B1Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the sameNEC CORP·Filed 1999·Granted Nov 5, 2002·43 cites·8 claims
- 0977US5869856AField effect transistorNEC CORP·Filed 1996·Granted Feb 9, 1999·42 cites·7 claims
- 1073US6440822B1Method of manufacturing semiconductor device with sidewall metal layersNEC CORP·Filed 2001·Granted Aug 27, 2002·19 cites·15 claims
- 1167US7071526B2Semiconductor device having Schottky junction electrodeNEC CORP·Filed 2003·Granted Jul 4, 2006·13 cites·50 claims
- 1266US6180968B1Compound semiconductor device and method of manufacturing the sameNEC CORP·Filed 1997·Granted Jan 30, 2001·26 cites·8 claims
- 1352US4829346AField-effect transistor and the same associated with an optical semiconductor deviceNEC CORP·Filed 1988·Granted May 9, 1989·18 cites·8 claims
- 1434US6093657AFabrication process of semiconductor deviceNEC CORP·Filed 1997·Granted Jul 25, 2000·4 cites·12 claims
- 1532US2006054929A1Semiconductor deviceNAKAYAMA TATSUO·Filed 2004·Application pending·0 cites
- 1631US4837605AIndium-phosphide hetero-MIS-gate field effect transistorNEC CORP·Filed 1987·Granted Jun 6, 1989·2 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →