Inventor · disambiguated record
Kenji Kohda
Also filed as: KOHDA KENJI
16 granted patents·1,011 citations·filing 1986–1994
95Inventor score
Files withMITSUBISHI ELECTRIC CORP16
Top patents by PatentIndex Score
16 records- 0198US5021999ANon-volatile semiconductor memory device with facility of storing tri-level dataMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jun 4, 1991·392 cites·16 claims
- 0292US4779272ATestable variable-threshold non-volatile semiconductor memoryMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Oct 18, 1988·106 cites·15 claims
- 0389US5600171AMask ROM deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Feb 4, 1997·70 cites·5 claims
- 0489US5003205ABuffer circuit used in a semiconductor device operating by different supply potentials and method of operating the sameMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Mar 26, 1991·42 cites·12 claims
- 0588US5450424ASemiconductor memory device with error checking and correcting functionMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Sep 12, 1995·141 cites·16 claims
- 0675US4958352ASemiconductor memory device with error check and correcting functionMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 18, 1990·51 cites·15 claims
- 0773US5243573ASense amplifier for nonvolatile semiconductor storage devicesMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Sep 7, 1993·35 cites·11 claims
- 0873US4827452ASemiconductor memory including a selectively disabled redunancy circuitMITSUBISHI ELECTRIC CORP·Filed 1986·Granted May 2, 1989·30 cites·8 claims
- 0965US5182725ANonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistor and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 26, 1993·25 cites·6 claims
- 1064US5467457ARead only type semiconductor memory device including address coincidence detecting circuits assigned to specific address regions and method of operating the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 14, 1995·24 cites·21 claims
- 1163US5097152ABuffer circuit used in a semiconductor device operating by different supply potentials and method of operating the sameMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 17, 1992·16 cites·12 claims
- 1258US5105386ANonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistors and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Apr 14, 1992·19 cites·2 claims
- 1356US5058071ASemiconductor memory device having means for repairing the memory device with respect to possible defective memory portionsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 15, 1991·18 cites·21 claims
- 1451US4949305AErasable read-only semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Aug 14, 1990·12 cites·33 claims
- 1549US5383205ASemiconductor memory device having an error correction circuit and an error correction method of data in a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 17, 1995·21 cites·17 claims
- 1644US5107313AFloating gate type semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Apr 21, 1992·9 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →