Inventor · disambiguated record
Kenji Kouno
Also filed as: KOUNO KENJI
53 granted patents·11 pending applications·777 citations·filing 1989–2022
98Inventor score
Top patents by PatentIndex Score
64 records- 0197US10056450B2Semiconductor deviceDENSO CORP·Filed 2015·Granted Aug 21, 2018·23 cites·5 claims
- 0296US7118806B2Plastic molded product having photochromic characteristic and/or polarizing characteristicsMITSUBISHI GAS CHEMICAL CO·Filed 2001·Granted Oct 10, 2006·22 cites·12 claims
- 0395US10062753B2Semiconductor deviceDENSO CORP·Filed 2016·Granted Aug 28, 2018·12 cites·9 claims
- 0495US8072241B2Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOSKOUNO KENJI·Filed 2008·Granted Dec 6, 2011·37 cites·8 claims
- 0594US10256234B2Semiconductor deviceDENSO CORP·Filed 2016·Granted Apr 9, 2019·11 cites·14 claims
- 0694US10170607B2Semiconductor deviceDENSO CORP·Filed 2016·Granted Jan 1, 2019·10 cites·7 claims
- 0794US6365932B1Power MOS transistorDENSO CORP·Filed 2000·Granted Apr 2, 2002·281 cites·15 claims
- 0893US9129851B2Semiconductor deviceDENSO CORP·Filed 2012·Granted Sep 8, 2015·16 cites·13 claims
- 0992US8242536B2Semiconductor deviceTANABE HIROMITSU·Filed 2010·Granted Aug 14, 2012·17 cites·19 claims
- 1092US6797383B2Synthetic resin laminate having both polarization characteristic and photochromism characteristicMITSUBISHI GAS CHEMICAL CO·Filed 2001·Granted Sep 28, 2004·45 cites·14 claims
- 1191US8080853B2Semiconductor device including insulated gate bipolar transistor and diodeTSUZUKI YUKIO·Filed 2009·Granted Dec 20, 2011·21 cites·9 claims
- 1291US6385028B1Surge preventing circuit for an insulated gate type transistorDENSO CORP·Filed 1999·Granted May 7, 2002·97 cites·15 claims
- 1389US8841699B2Semiconductor device including insulated gate bipolar transistor and diodeTSUZUKI YUKIO·Filed 2012·Granted Sep 23, 2014·11 cites·6 claims
- 1489US8614483B2Insulated gate semiconductor deviceTANABE HIROMITSU·Filed 2011·Granted Dec 24, 2013·14 cites·33 claims
- 1589US8451023B2Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOSKOUNO KENJI·Filed 2011·Granted May 28, 2013·8 cites·8 claims
- 1689US8405122B2Insulated gate semiconductor deviceKOUNO KENJI·Filed 2011·Granted Mar 26, 2013·12 cites·17 claims
- 1789US8168999B2Semiconductor device having IGBT and diodeTSUZUKI YUKIO·Filed 2009·Granted May 1, 2012·17 cites·14 claims
- 1887US8299539B2Semiconductor device having IGBT and FWD on same substrateKOUNO KENJI·Filed 2009·Granted Oct 30, 2012·17 cites·16 claims
- 1985US8988105B2Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOSDENSO CORP·Filed 2013·Granted Mar 24, 2015·5 cites·7 claims
- 2085US8847276B2Semiconductor deviceTANABE HIROMITSU·Filed 2011·Granted Sep 30, 2014·8 cites·18 claims
- 2185US7728382B2Semiconductor device having diode and IGBTDENSO CORP·Filed 2008·Granted Jun 1, 2010·11 cites·12 claims
- 2284US8288824B2Semiconductor device including insulated gate bipolar transistor and diodeTSUZUKI YUKIO·Filed 2011·Granted Oct 16, 2012·7 cites·7 claims
- 2381US10543961B2Container cap and production method for container capMITSUBISHI GAS CHEMICAL CO·Filed 2017·Granted Jan 28, 2020·1 cites·11 claims
- 2479US9224730B2Semiconductor deviceDENSO CORP·Filed 2014·Granted Dec 29, 2015·4 cites·9 claims
- 2579US7692214B2Semiconductor device having IGBT cell and diode cell and method for designing the sameDENSO CORP·Filed 2007·Granted Apr 6, 2010·8 cites·15 claims
- 2678US8729600B2Insulated gate bipolar transistor (IGBT) with hole stopper layerTSUZUKI YUKIO·Filed 2012·Granted May 20, 2014·5 cites·7 claims
- 2778US8648385B2Semiconductor deviceKOUNO KENJI·Filed 2011·Granted Feb 11, 2014·5 cites·7 claims
- 2878US6986946B2Transparent synthetic resin laminate having photochromismMITSUBISHI GAS CHEMICAL CO·Filed 2001·Granted Jan 17, 2006·21 cites·18 claims
- 2977US9595500B2Semiconductor deviceDENSO CORP·Filed 2014·Granted Mar 14, 2017·4 cites·7 claims
- 3075US7638202B2Stretched polyamide filmsMITSUBISHI GAS CHEMICAL CO·Filed 2006·Granted Dec 29, 2009·3 cites·18 claims
- 3174US10658360B2Semiconductor device with an insulated-gate bipolar transistor region and a diode regionFUJI ELECTRIC CO LTD·Filed 2017·Granted May 19, 2020·2 cites·3 claims
- 3272US10714715B2Electric storage deviceGS YUASA INT LTD·Filed 2016·Granted Jul 14, 2020·1 cites·13 claims
- 3369US9817478B2Vibration device and electronic deviceKYOCERA CORP·Filed 2013·Granted Nov 14, 2017·2 cites·11 claims
- 3468US10629678B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Apr 21, 2020·1 cites·13 claims
- 3568US10300648B2Method for producing a polyolefin structureMITSUBISHI GAS CHEMICAL CO·Filed 2014·Granted May 28, 2019·1 cites·16 claims
- 3666US9761663B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Sep 12, 2017·1 cites·10 claims
- 3766US8026572B2Semiconductor device and method for manufacturing sameDENSO CORP·Filed 2007·Granted Sep 27, 2011·3 cites·30 claims
- 3865US11869961B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Granted Jan 9, 2024·0 cites·9 claims
- 3961US2015108696A1Molded article having excellent fuel barrier propertiesMITSUBISHI GAS CHEMICAL CO·Filed 2014·Application pending·0 cites
- 4060US8710568B2Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the sameOZEKI YOSHIHIKO·Filed 2008·Granted Apr 29, 2014·2 cites·26 claims
- 4159US8455958B2Insulated gate semiconductor device with well region edge positioned within ring-shaped buffer trenchTSUZUKI YUKIO·Filed 2011·Granted Jun 4, 2013·1 cites·6 claims
- 4258US9772361B2Measuring method and measuring apparatus to detect charge potential between tire and road surfaceUNIV TOKYO·Filed 2012·Granted Sep 26, 2017·2 cites·13 claims
- 4356US2025100195A1Multilayer container and method for producing multilayer containerMITSUBISHI GAS CHEMICAL CO·Filed 2022·Application pending·0 cites
- 4455US9184158B2Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOSDENSO CORP·Filed 2015·Granted Nov 10, 2015·0 cites·6 claims
- 4555US2008081202A1Biaxially stretched, multi-layered polyamide film and production method thereofNANBA HIROYUKI·Filed 2007·Application pending·0 cites
- 4654US12363944B2Semiconductor deviceDENSO CORP·Filed 2022·Granted Jul 15, 2025·0 cites·4 claims
- 4754US11111365B2Polyolefin structureMITSUBISHI GAS CHEMICAL CO·Filed 2017·Granted Sep 7, 2021·0 cites·13 claims
- 4854US2023038806A1Semiconductor deviceDENSO CORP·Filed 2022·Application pending·0 cites
- 4953US12356223B2Abnormality detection apparatus, abnormality detection method and non-transitory computer readable mediumNEC CORP·Filed 2020·Granted Jul 8, 2025·0 cites·10 claims
- 5053US2013251927A1Molded article having excellent fuel barrier propertiesKOUNO KENJI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →