Inventor · disambiguated record
Keh-Chiang Ku
Also filed as: KU KEH-CHIANG
22 granted patents·6 pending applications·146 citations·filing 2006–2013
95Inventor score
Top patents by PatentIndex Score
28 records- 0197US9698185B2Partial buried channel transfer device for image sensorsCHEN GANG·Filed 2011·Granted Jul 4, 2017·26 cites·16 claims
- 0295US8466010B2Seal ring support for backside illuminated image sensorOMNIVISION TECH INC·Filed 2013·Granted Jun 18, 2013·13 cites·10 claims
- 0395US8071429B1Wafer dicing using scribe line etchQIAN YIN·Filed 2010·Granted Dec 6, 2011·25 cites·12 claims
- 0492US8569856B2Pad design for circuit under pad in semiconductor devicesQIAN YIN·Filed 2011·Granted Oct 29, 2013·14 cites·10 claims
- 0592US8373243B2Seal ring support for backside illuminated image sensorOMNIVISION TECH INC·Filed 2011·Granted Feb 12, 2013·7 cites·9 claims
- 0689US8471316B2Isolation area between semiconductor devices having additional active areaTAI HSIN-CHIH·Filed 2011·Granted Jun 25, 2013·6 cites·14 claims
- 0789US7482211B2Junction leakage reduction in SiGe process by implantationTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 27, 2009·16 cites·19 claims
- 0884US8804021B2Method, apparatus and system for providing improved full well capacity in an image sensor pixelMANABE SOHEI·Filed 2011·Granted Aug 12, 2014·3 cites·20 claims
- 0981US8058134B2Junction profile engineering using staged thermal annealingWANG LI-TING·Filed 2009·Granted Nov 15, 2011·8 cites·26 claims
- 1080US8729712B2Pad design for circuit under pad in semiconductor devicesOMNIVISION TECH INC·Filed 2013·Granted May 20, 2014·4 cites·7 claims
- 1176US7994051B2Implantation method for reducing threshold voltage for high-K metal gate deviceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 9, 2011·4 cites·13 claims
- 1276US7494857B2Advanced activation approach for MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 24, 2009·5 cites·19 claims
- 1371US7504292B2Short channel effect engineering in MOS device using epitaxially carbon-doped siliconTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Mar 17, 2009·3 cites·10 claims
- 1470US7741699B2Semiconductor device having ultra-shallow and highly activated source/drain extensionsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 22, 2010·3 cites·11 claims
- 1569US8039375B2Shallow junction formation and high dopant activation rate of MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Oct 18, 2011·2 cites·15 claims
- 1666US8349732B2Implanted metal silicide for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jan 8, 2013·3 cites·19 claims
- 1766US8258546B2High-k metal gate deviceHUNG CHENG-LUNG·Filed 2011·Granted Sep 4, 2012·2 cites·19 claims
- 1866US7736968B2Reducing poly-depletion through co-implanting carbon and nitrogenTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jun 15, 2010·2 cites·17 claims
- 1959US2014374862A1CMOS Image Sensor With Integrated Silicon Color FiltersOMNIVISION TECH INC·Filed 2013·Application pending·0 cites
- 2053US2012280109A1Method, apparatus and system to provide conductivity for a substrate of an image sensing pixelMAO DULI·Filed 2011·Application pending·0 cites
- 2152US8212253B2Shallow junction formation and high dopant activation rate of MOS devicesNIEH CHUN-FENG·Filed 2011·Granted Jul 3, 2012·0 cites·20 claims
- 2250US8729655B2Etching narrow, tall dielectric isolation structures from a dielectric layerLIU CHIA-YING·Filed 2012·Granted May 20, 2014·0 cites·11 claims
- 2349US2011169991A1Image sensor with epitaxially self-aligned photo sensorsOMNIVISION TECH INC·Filed 2010·Application pending·0 cites
- 2448US8614112B2Method of damage-free impurity doping for CMOS image sensorsKU KEH-CHIANG·Filed 2010·Granted Dec 24, 2013·0 cites·6 claims
- 2542US2007298557A1Junction leakage reduction in SiGe process by tilt implantationNIEH CHUN-FENG·Filed 2006·Application pending·0 cites
- 2641US2008290420A1SiGe or SiC layer on STI sidewallsYU MING-HUA·Filed 2007·Application pending·0 cites
- 2739US2012319242A1Dopant Implantation Hardmask for Forming Doped Isolation Regions in Image SensorsMAO DULI·Filed 2011·Application pending·0 cites
- 2833US8338263B1Etching narrow, tall dielectric isolation structures from a dielectric layerLIU CHIA-YING·Filed 2011·Granted Dec 25, 2012·0 cites·11 claims
Join the waitlist — get patent alerts
Get an alert when Keh-Chiang Ku files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →