Inventor · disambiguated record

Keng-Ying Liao

Also filed as: LIAO KENG-YING

50 granted patents·15 pending applications·58 citations·filing 2012–2025

97Inventor score

Technology areasH10D H10P H10W H01L H10F

Files withTAIWAN SEMICONDUCTOR MFG CO LTD57 FORMOSA EPITAXY INC3 TAIWAN SEMICONDUCTOR MFG2 EPISTAR CORP1 LIAO KENG-YING1

Top patents by PatentIndex Score

65 records

0196US11888074B2Flash memory device with three-dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
0295US11901390B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
0394US11430909B2BSI chip with backside alignment markTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
0493US11527543B2Polysilicon removal in word line contact region of memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·4 cites·20 claims
0593US10283548B1CMOS sensors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·9 cites·20 claims
0693US2025366072A1Flash memory device with three-dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0791US9484376B2Semiconductor isolation structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 1, 2016·8 cites·11 claims
0889US11532658B2Image sensor grid and method of fabrication of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
0989US2025126848A1Flash Memory Device with Three Dimensional Half Flash Structure and Methods for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1088US10269684B2Semiconductor structure and manufacuting method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
1187US12402362B2Flash memory device with three-dimensional half structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
1287US11658248B2Flash memory device with three-dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·1 cites·20 claims
1387US9220135B2Light emitting component and light emitting device using sameFORMOSA EPITAXY INC·Filed 2013·Granted Dec 22, 2015·8 cites·12 claims
1485US2025126920A1Image sensor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1584US12218253B2Flash memory device with three dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
1684US10163646B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·1 cites·19 claims
1784US2025098227A1Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1883US12364049B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
1983US2025275190A1Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2083US2025324589A1Polysilicon Removal In Word Line Contact Region Of Memory DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2182US12317545B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
2282US2025311466A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2381US11183572B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·1 cites·20 claims
2480US12261188B2Image sensor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
2580US12199159B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
2680US9583356B1Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 28, 2017·1 cites·20 claims
2780US2024047496A1Image sensor grid and method of fabrication of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2879US12376297B2Polysilicon removal in word line contact region of memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
2979US9661698B2Light emitting component and light emitting device using sameFORMOSA EPITAXY INC·Filed 2014·Granted May 23, 2017·3 cites·15 claims
3078US10879289B1Method for forming a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
3178US2024363791A1Bsi chip with backside alignment markTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3277US12191338B2Image sensor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
3377US9929203B1Semiconductor device and method for fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 27, 2018·2 cites·16 claims
3476US11804529B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
3576US10665466B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·0 cites·20 claims
3676US2023120006A1Image sensor grid and method of fabrication of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
3775US12094997B2BSI chip with backside alignment markTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 17, 2024·0 cites·20 claims
3874US12041771B2Polysilicon removal in word line contact region of memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
3974US2022359598A1Image sensor grid and method of fabrication of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
4073US11728399B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
4171US10306714B2Semiconductor component and light emitting device using sameEPISTAR CORP·Filed 2017·Granted May 28, 2019·1 cites·20 claims
4271US2024387146A1Wafer treatment system and method of treating waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4370US11652133B2Image sensor grid and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2021·Granted May 16, 2023·0 cites·20 claims
4470US11652127B2Image sensor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 16, 2023·0 cites·20 claims
4570US11282931B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·0 cites·20 claims
4668US2022367559A1Method for forming image sensor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
4767US9831154B2Semiconductor structure and manufacuting method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 28, 2017·1 cites·20 claims
4867US9040317B2Methods for achieving width control in etching processesLIAO KENG-YING·Filed 2012·Granted May 26, 2015·3 cites·17 claims
4966US11069740B2Image sensor grid and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
5064US11903193B2Two dimensional structure to control flash operation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims

Showing the top 50 of 65 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →