Inventor · disambiguated record
Keng-Chu Lin
Also filed as: LIN KENG-CHU
164 granted patents·64 pending applications·561 citations·filing 1999–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD162TAIWAN SEMICONDUCTOR MFG33CHI MEI CORP6KO CHUNG-CHI6LIOU JOUNG-WEI4
Top patents by PatentIndex Score
228 records- 0198US11626494B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·6 cites·20 claims
- 0298US11393924B2Structure and formation method of semiconductor device with high contact areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·6 cites·20 claims
- 0397US11855215B2Semiconductor device structure with high contact areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·3 cites·20 claims
- 0497US10950731B1Inner spacers for gate-all-around semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·25 cites·20 claims
- 0596US11476365B2Fin field effect transistor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·4 cites·20 claims
- 0696US10510874B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·9 cites·20 claims
- 0795US11664268B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 0895US11522074B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·2 cites·20 claims
- 0995US11296187B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
- 1095US7135402B2Sealing pores of low-k dielectrics using CxHyTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 14, 2006·59 cites·16 claims
- 1194US10510580B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·8 cites·20 claims
- 1294US7564136B2Integration scheme for Cu/low-k interconnectsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jul 21, 2009·31 cites·19 claims
- 1393US11776960B2Gate structures for stacked semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
- 1493US11158539B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·6 cites·19 claims
- 1593US9812390B2Semiconductor devices including conductive features with capping layers and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·8 cites·20 claims
- 1691US11837544B2Liner-free conductive structures with anchor pointsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·1 cites·20 claims
- 1791US11688766B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·1 cites·20 claims
- 1891US8470708B2Double patterning strategy for contact hole and trench in photolithographySHIH PO-CHENG·Filed 2010·Granted Jun 25, 2013·16 cites·20 claims
- 1990US11942358B2Low thermal budget dielectric for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·2 cites·20 claims
- 2090US11476333B2Dual channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·2 cites·20 claims
- 2190US10950714B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·3 cites·20 claims
- 2290US9870944B2Back-end-of-line (BEOL) interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·6 cites·20 claims
- 2389US11227794B2Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 2489US11011413B2Interconnect structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·6 cites·20 claims
- 2589US6846756B2Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layersTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jan 25, 2005·39 cites·20 claims
- 2688US10761427B2Photoresist and method of formation and useTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 1, 2020·3 cites·21 claims
- 2788US9341945B2Photoresist and method of formation and useTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 17, 2016·5 cites·20 claims
- 2887US12341013B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
- 2987US11855214B2Inner spacers for gate-all-around semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·1 cites·20 claims
- 3087US9728402B2Flowable films and methods of forming flowable filmsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·5 cites·20 claims
- 3187US9093455B2Back-end-of-line (BEOL) interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·7 cites·24 claims
- 3286US12148807B2Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 19, 2024·1 cites·20 claims
- 3386US10510895B2Device and method of dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
- 3486US9059259B2Hard mask for back-end-of-line (BEOL) interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 16, 2015·8 cites·18 claims
- 3586US8536064B2Double patterning strategy for contact hole and trench in photolithographyKO CHUNG-CHI·Filed 2010·Granted Sep 17, 2013·7 cites·18 claims
- 3686US2025301691A1Inner spacers for gate-all-around semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3786US2025349614A1Conductive feature of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3886US2025308901A1Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3986US2025359108A1Contact and via structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4086US2024332419A1Device of dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4185US12336214B2Inner spacers for gate-all-around semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 4285US12287575B2Photoresist and method of formation and useTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 4385US12255249B2Inner spacer structures for gate-all-around field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 4485US10879111B1Dielectric plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·3 cites·20 claims
- 4585US7365026B2CxHy sacrificial layer for cu/low-k interconnectsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 29, 2008·10 cites·18 claims
- 4684US2025224673A1Photoresist and method of formation and useTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4783US12362224B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 4883US11894437B2Hybrid conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·1 cites·20 claims
- 4983US11404416B2Low resistance fill metal layer material as stressor in metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 2, 2022·2 cites·20 claims
- 5083US9054110B2Low-K dielectric layer and porogenLIOU JOUNG-WEI·Filed 2011·Granted Jun 9, 2015·5 cites·21 claims
Showing the top 50 of 228 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →