Inventor · disambiguated record
Kensaku Motoki
Also filed as: MOTOKI KENSAKU
61 granted patents·19 pending applications·2,231 citations·filing 1996–2015
99Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES49SHARP KK10HASHIMOTO SHIN3YANASHIMA KATSUNORI3ITO SHIGETOSHI2
Top patents by PatentIndex Score
80 records- 0199US7968864B2Group-III nitride light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jun 28, 2011·254 cites·11 claims
- 0299US7303630B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Dec 4, 2007·291 cites·42 claims
- 0398US6468882B2Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Oct 22, 2002·197 cites·21 claims
- 0497US6693021B1GaN single crystal substrate and method of making the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Feb 17, 2004·116 cites·12 claims
- 0597US6468347B1Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Oct 22, 2002·217 cites·51 claims
- 0696US7655960B2A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing sameSUMITO ELECTRIC IND LTD·Filed 2006·Granted Feb 2, 2010·78 cites·3 claims
- 0796US7473315B2AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Jan 6, 2009·23 cites·92 claims
- 0896US7105865B2AlxInyGa1−x−yN mixture crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Sep 12, 2006·50 cites·29 claims
- 0996US6413627B1GaN single crystal substrate and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Jul 2, 2002·261 cites·14 claims
- 1095US6667184B2Single crystal GaN substrate, method of growing same and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Dec 23, 2003·74 cites·42 claims
- 1194US7589000B2Fabrication method and fabrication apparatus of group III nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Sep 15, 2009·20 cites·4 claims
- 1294US6509651B1Substrate-fluorescent LEDSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Jan 21, 2003·188 cites·20 claims
- 1392US7579627B2Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatusSHARP KK·Filed 2006·Granted Aug 25, 2009·14 cites·17 claims
- 1492US6773504B2Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Aug 10, 2004·39 cites·14 claims
- 1589US7692200B2Nitride semiconductor light-emitting deviceSHARP KK·Filed 2008·Granted Apr 6, 2010·11 cites·2 claims
- 1689US7091056B2Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Aug 15, 2006·12 cites·12 claims
- 1788US6812496B2Group III nitride semiconductor laser deviceSHARP KK·Filed 2002·Granted Nov 2, 2004·23 cites·8 claims
- 1887US7462882B2Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatusSHARP KK·Filed 2004·Granted Dec 9, 2008·20 cites·6 claims
- 1986US7667298B2Oxygen-doped n-type gallium nitride freestanding single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Feb 23, 2010·7 cites·7 claims
- 2086US7112826B2Single crystal GaN substrate semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Sep 26, 2006·29 cites·30 claims
- 2186US7012318B2Oxygen-doped n-type gallium nitride freestanding single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Mar 14, 2006·22 cites·5 claims
- 2284US7919831B2Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Apr 5, 2011·4 cites·6 claims
- 2383US7498608B2Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical deviceSHARP KK·Filed 2002·Granted Mar 3, 2009·20 cites·11 claims
- 2483US5962875ALight emitting device, wafer for light emitting device, and method of preparing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1998·Granted Oct 5, 1999·65 cites·19 claims
- 2582US7858992B2Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatusSHARP KK·Filed 2009·Granted Dec 28, 2010·5 cites·2 claims
- 2681US7087114B2Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Aug 8, 2006·17 cites·92 claims
- 2779US8592289B2Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide waferHASHIMOTO SHIN·Filed 2010·Granted Nov 26, 2013·4 cites·20 claims
- 2879US8198177B2AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing sameNAKAHATA SEIJI·Filed 2011·Granted Jun 12, 2012·3 cites·1 claims
- 2979US7858502B2Fabrication method and fabrication apparatus of group III nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Dec 28, 2010·4 cites·6 claims
- 3076US7794543B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Sep 14, 2010·3 cites·8 claims
- 3175US7015058B2Method for fabricating a group III nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Mar 21, 2006·10 cites·12 claims
- 3274US5834325ALight emitting device, wafer for light emitting device, and method of preparing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Nov 10, 1998·40 cites·10 claims
- 3373US8415180B2Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical deviceHASHIMOTO SHIN·Filed 2010·Granted Apr 9, 2013·2 cites·24 claims
- 3473US7504323B2GaN single crystal substrate and method of making the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Mar 17, 2009·10 cites·16 claims
- 3572US9618190B2LED module including flexible printed circuit board with adhesive layers and LED lighting fixtureSUMITOMO ELECTRIC PRINTED CIRCUITS INC·Filed 2014·Granted Apr 11, 2017·3 cites·14 claims
- 3671US7534310B2Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted May 19, 2009·2 cites·49 claims
- 3770US7928447B2GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Apr 19, 2011·4 cites·8 claims
- 3869US7357837B2GaN single crystal substrate and method of making the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Apr 15, 2008·8 cites·8 claims
- 3969US7354477B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Apr 8, 2008·7 cites·43 claims
- 4068US8679955B2Method for forming epitaxial wafer and method for fabricating semiconductor deviceHASHIMOTO SHIN·Filed 2010·Granted Mar 25, 2014·2 cites·8 claims
- 4167US8404569B2Fabrication method and fabrication apparatus of group III nitride crystal substanceKASAI HITOSHI·Filed 2010·Granted Mar 26, 2013·1 cites·8 claims
- 4267US7781244B2Method of manufacturing nitride-composite semiconductor laser element, with disclocation controlSHARP KK·Filed 2008·Granted Aug 24, 2010·1 cites·17 claims
- 4367US7176499B2Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Feb 13, 2007·8 cites·17 claims
- 4466US7915635B2Semiconductor light-emitting element and substrate used in formation of the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Mar 29, 2011·2 cites·8 claims
- 4566US7470970B2Oxygen-doped n-type gallium nitride freestanding single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Dec 30, 2008·1 cites·5 claims
- 4665US7903710B2Nitride semiconductor light-emitting deviceSHARP KK·Filed 2010·Granted Mar 8, 2011·1 cites·5 claims
- 4764US8067300B2AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing sameNAKAHATA SEIJI·Filed 2009·Granted Nov 29, 2011·1 cites·39 claims
- 4864US7622318B2Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and deviceSONY CORP·Filed 2004·Granted Nov 24, 2009·7 cites·38 claims
- 4961US9305776B2Oxygen-doped gallium nitride crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Apr 5, 2016·0 cites·3 claims
- 5059US8933538B2Oxygen-doped gallium nitride single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jan 13, 2015·0 cites·4 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →