Inventor · disambiguated record
Ken Nakata
Also filed as: NAKATA KEN
39 granted patents·23 pending applications·127 citations·filing 2001–2023
96Inventor score
Top patents by PatentIndex Score
62 records- 0194US7592647B2Semiconductor device and manufacturing method thereofEUDYNA DEVICES INC·Filed 2006·Granted Sep 22, 2009·32 cites·8 claims
- 0291US8227810B2Semiconductor device and method for manufacturing sameOKADA MASAYA·Filed 2010·Granted Jul 24, 2012·13 cites·2 claims
- 0385US8629479B2Semiconductor deviceNAKATA KEN·Filed 2011·Granted Jan 14, 2014·8 cites·17 claims
- 0485US7521707B2Semiconductor device having GaN-based semiconductor layerEUDYNA DEVICES INC·Filed 2006·Granted Apr 21, 2009·12 cites·4 claims
- 0583US10147811B2Process of forming a high electron mobility transistor (HEMT)SUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Dec 4, 2018·3 cites·10 claims
- 0682US8044433B2GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltageEUDYNA DEVICES INC·Filed 2006·Granted Oct 25, 2011·10 cites·13 claims
- 0781US8525184B2Semiconductor device and method for manufacturing sameOKADA MASAYA·Filed 2012·Granted Sep 3, 2013·6 cites·3 claims
- 0881US7723751B2Semiconductor device and fabrication method of the sameEUDYNA DEVICES INC·Filed 2006·Granted May 25, 2010·9 cites·2 claims
- 0980US11559603B2High-strength collagen spongeKOKEN KK·Filed 2017·Granted Jan 24, 2023·1 cites·8 claims
- 1080US9123534B2Semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 1, 2015·4 cites·7 claims
- 1180US8247796B2Semiconductor deviceMAKABE ISAO·Filed 2010·Granted Aug 21, 2012·5 cites·9 claims
- 1279US12303613B2High-strength collagen spongeKOKEN KK·Filed 2022·Granted May 20, 2025·0 cites·10 claims
- 1379US8993416B2Method of manufacturing semiconductor deviceYUI KEIICHI·Filed 2011·Granted Mar 31, 2015·5 cites·10 claims
- 1474US8546813B2Semiconductor substrate and semiconductor deviceMAKABE ISAO·Filed 2011·Granted Oct 1, 2013·4 cites·24 claims
- 1573US10263094B2Nitride semiconductor device and process of forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Apr 16, 2019·1 cites·12 claims
- 1672US8232557B2Semiconductor substrate with AlGaN formed thereon and semiconductor device using the sameMAKABE ISAO·Filed 2007·Granted Jul 31, 2012·5 cites·4 claims
- 1770US11557668B2High electron mobility transistor with reverse arrangement of channel layer and barrier layerSEDI INC·Filed 2020·Granted Jan 17, 2023·0 cites·16 claims
- 1869US8742426B2Semiconductor deviceNAKATA KEN·Filed 2011·Granted Jun 3, 2014·2 cites·5 claims
- 1968US10971614B2High electron mobility transistor with reverse arrangement of channel layer and barrier layerSEDI INC·Filed 2020·Granted Apr 6, 2021·0 cites·15 claims
- 2067US10038086B2Process for forming a high electron mobility transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jul 31, 2018·1 cites·7 claims
- 2167US9865720B2High electron-mobility transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jan 9, 2018·1 cites·13 claims
- 2265US8754419B2Semiconductor deviceNAKATA KEN·Filed 2011·Granted Jun 17, 2014·2 cites·17 claims
- 2364US10943999B2Field effect transistor and process of forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Mar 9, 2021·0 cites·7 claims
- 2462US2021038763A1Collagen SpongeUNIV OSAKA·Filed 2020·Application pending·0 cites
- 2562US2025339584A1Composition for cartilage repair and method for manufacturing sameUNIV OSAKA·Filed 2023·Application pending·0 cites
- 2661US10790385B2High electron mobility transistor with reverse arrangement of channel layer and barrier layerSEDI INC·Filed 2019·Granted Sep 29, 2020·0 cites·14 claims
- 2761US7947578B2Method for fabricating semiconductor deviceSEDI INC·Filed 2010·Granted May 24, 2011·1 cites·20 claims
- 2860US10580887B2Field effect transistor and process of forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 3, 2020·0 cites·8 claims
- 2958US7728353B2Semiconductor device in which GaN-based semiconductor layer is selectively formedEUDYNA DEVICES INC·Filed 2006·Granted Jun 1, 2010·1 cites·2 claims
- 3057US10211323B2Hemt having heavily doped N-type regions and process of forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Feb 19, 2019·0 cites·9 claims
- 3157US8748274B2Method for fabricating semiconductor deviceNAKATA KEN·Filed 2009·Granted Jun 10, 2014·1 cites·18 claims
- 3256US2024055139A1Disease outbreak forecasting apparatus, and method thereof and storage mediumUNIV OSAKA·Filed 2021·Application pending·0 cites
- 3355US2016089474A1Collagen SpongeUNIV OSAKA·Filed 2014·Application pending·0 cites
- 3453US11935744B2Method for manufacturing nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Mar 19, 2024·0 cites·16 claims
- 3553US2023380755A1Joint evaluation apparatus, method, and storage mediumUNIV OSAKA·Filed 2021·Application pending·0 cites
- 3652US2014346530A1Semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 3751US9701937B2Carrier for cultivation of cellsNAKATA KEN·Filed 2009·Granted Jul 11, 2017·0 cites·1 claims
- 3850US9355843B2Semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted May 31, 2016·0 cites·5 claims
- 3950US2024138870A1Grasping forcepsUNIV OSAKA·Filed 2021·Application pending·0 cites
- 4049US7968335B2Cell culturing method using biomechanical stimulation loading and system thereforNAKATA KEN·Filed 2005·Granted Jun 28, 2011·0 cites·9 claims
- 4149US2017092747A1Hemt having heavily doped n-type regions and process of forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Application pending·0 cites
- 4249US2018053648A1Method of manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Application pending·0 cites
- 4349US2023112078A1Floor reaction force index estimation system, floor reaction force index estimation method, and floor reaction force index estimation programUNIV OSAKA·Filed 2022·Application pending·0 cites
- 4448US9685548B2High electron mobility transistor and method of forming the same using atomic layer deposition techniqueSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jun 20, 2017·0 cites·17 claims
- 4548US9437725B2Semiconductor device and semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 6, 2016·0 cites·17 claims
- 4647US2013313564A1Semiconductor device and method for manufacturing sameSEDI INC·Filed 2013·Application pending·0 cites
- 4746US9029873B2Semiconductor device including an aluminum nitride layer having a calculated area-averaged circularity and a method of manufacturing the deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted May 12, 2015·0 cites·18 claims
- 4846US2024082637A1Exercise support apparatus, exercise support method, exercise support system, and storage mediumUNIV OSAKA·Filed 2021·Application pending·0 cites
- 4945US9159821B2Nitride semiconductor device with limited instantaneous current reductionSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Oct 13, 2015·0 cites·15 claims
- 5045US2012315742A1Method for forming nitride semiconductor deviceYUI KEIICHI·Filed 2012·Application pending·0 cites
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →