Inventor · disambiguated record
Keishi Saitoh
Also filed as: SAITOH KEISHI
90 granted patents·1,184 citations·filing 1982–1995
99Inventor score
Top patents by PatentIndex Score
90 records- 0194US4460670APhotoconductive member with α-Si and C, N or O and dopantCANON KK·Filed 1982·Granted Jul 17, 1984·99 cites·52 claims
- 0290US5482557ADevice for forming deposited filmCANON KK·Filed 1994·Granted Jan 9, 1996·36 cites·12 claims
- 0386US5417770APhotovoltaic device and a forming method thereofCANON KK·Filed 1993·Granted May 23, 1995·61 cites·28 claims
- 0486US4785763AApparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition processCANON KK·Filed 1987·Granted Nov 22, 1988·33 cites·2 claims
- 0585US4452875AAmorphous photoconductive member with α-Si interlayersCANON KK·Filed 1983·Granted Jun 5, 1984·26 cites·13 claims
- 0683US4546008AMethod for forming a deposition filmCANON KK·Filed 1984·Granted Oct 8, 1985·39 cites·17 claims
- 0783US4460669APhotoconductive member with α-Si and C, U or D and dopantCANON KK·Filed 1982·Granted Jul 17, 1984·46 cites·52 claims
- 0881US5527396ADeposited film forming apparatusCANON KK·Filed 1995·Granted Jun 18, 1996·46 cites·4 claims
- 0981US4600671APhotoconductive member having light receiving layer of A-(Si-Ge) and NCANON KK·Filed 1984·Granted Jul 15, 1986·44 cites·1 claims
- 1080US4465750APhotoconductive member with a -Si having two layer regionsCANON KK·Filed 1982·Granted Aug 14, 1984·40 cites·31 claims
- 1180US4452874APhotoconductive member with multiple amorphous Si layersCANON KK·Filed 1983·Granted Jun 5, 1984·21 cites·9 claims
- 1279US5016565AMicrowave plasma chemical vapor deposition apparatus for forming functional deposited film with means for stabilizing plasma dischargeCANON KK·Filed 1989·Granted May 21, 1991·22 cites·3 claims
- 1377US4529679APhotoconductive memberCANON KK·Filed 1983·Granted Jul 16, 1985·18 cites·24 claims
- 1475US4897284AProcess for forming a deposited film on each of a plurality of substrates by way of microwave plasma chemical vapor deposition methodCANON KK·Filed 1988·Granted Jan 30, 1990·20 cites·4 claims
- 1574US5635408AMethod of producing a semiconductor deviceCANON KK·Filed 1995·Granted Jun 3, 1997·44 cites·36 claims
- 1673US4953498AMicrowave plasma CVD apparatus having substrate shielding memberCANON KK·Filed 1990·Granted Sep 4, 1990·27 cites·7 claims
- 1767US4592981APhotoconductive member of amorphous germanium and silicon with carbonCANON KK·Filed 1984·Granted Jun 3, 1986·13 cites·88 claims
- 1867US4486521APhotoconductive member with doped and oxygen containing amorphous silicon layersCANON KK·Filed 1983·Granted Dec 4, 1984·13 cites·16 claims
- 1965US4705733AMember having light receiving layer and substrate with overlapping subprojectionsCANON KK·Filed 1985·Granted Nov 10, 1987·13 cites·64 claims
- 2065US4592983APhotoconductive member having amorphous germanium and amorphous silicon regions with nitrogenCANON KK·Filed 1984·Granted Jun 3, 1986·12 cites·60 claims
- 2165US4522905AAmorphous silicon photoconductive member with interface and rectifying layersCANON KK·Filed 1983·Granted Jun 11, 1985·12 cites·19 claims
- 2264US5637358AMicrowave plasma chemical vapor deposition process using a microwave window and movable, dielectric sheetCANON KK·Filed 1995·Granted Jun 10, 1997·27 cites·6 claims
- 2364US4957772AMethod for forming functional deposited films by means of microwave plasma chemical vapor deposition methodCANON KK·Filed 1988·Granted Sep 18, 1990·20 cites·8 claims
- 2463US5061511AMethod for forming functional deposited films by means of microwave plasma chemical vapor deposition methodCANON KK·Filed 1990·Granted Oct 29, 1991·20 cites·6 claims
- 2563US4592982APhotoconductive member of layer of A-Ge, A-Si increasing (O) and layer of A-Si(C) or (N)CANON KK·Filed 1984·Granted Jun 3, 1986·11 cites·32 claims
- 2663US4490454APhotoconductive member comprising multiple amorphous layersCANON KK·Filed 1983·Granted Dec 25, 1984·11 cites·45 claims
- 2763US4483911APhotoconductive member with amorphous silicon-carbon surface layerCANON KK·Filed 1982·Granted Nov 20, 1984·20 cites·18 claims
- 2860US4650736ALight receiving member having photosensitive layer with non-parallel interfacesCANON KK·Filed 1985·Granted Mar 17, 1987·16 cites·42 claims
- 2959US4598032APhotoconductive member with a-Si; a-(Si/Ge) and a-(Si/C) layersCANON KK·Filed 1984·Granted Jul 1, 1986·10 cites·26 claims
- 3058US4532198APhotoconductive memberCANON KK·Filed 1984·Granted Jul 30, 1985·9 cites·19 claims
- 3157US4569894APhotoconductive member comprising germanium atomsCANON KK·Filed 1984·Granted Feb 11, 1986·9 cites·35 claims
- 3257US4501807APhotoconductive member having an amorphous silicon layerCANON KK·Filed 1983·Granted Feb 26, 1985·9 cites·25 claims
- 3356US4844950AMethod for forming a metal film on a substrateCANON KK·Filed 1986·Granted Jul 4, 1989·16 cites·3 claims
- 3456US4804558AProcess for producing electroluminescent devicesCANON KK·Filed 1986·Granted Feb 14, 1989·14 cites·6 claims
- 3556US4696884AMember having photosensitive layer with series of smoothly continuous non-parallel interfacesCANON KK·Filed 1985·Granted Sep 29, 1987·10 cites·46 claims
- 3655US5573601APin amorphous silicon photovoltaic element with counter-doped intermediate layerCANON KK·Filed 1994·Granted Nov 12, 1996·17 cites·17 claims
- 3755US4930442AMicrowave plasma CVD apparatus having an improved microwave transmissive windowCANON KK·Filed 1988·Granted Jun 5, 1990·16 cites·3 claims
- 3854US4897281AProcess for the formation of a functional deposited film by way of microwave plasma CVD methodCANON KK·Filed 1988·Granted Jan 30, 1990·21 cites·8 claims
- 3954US4795688ALayered photoconductive member comprising amorphous siliconCANON KK·Filed 1987·Granted Jan 3, 1989·9 cites·21 claims
- 4052US4834023AApparatus for forming deposited filmCANON KK·Filed 1986·Granted May 30, 1989·14 cites·5 claims
- 4152US4595644APhotoconductive member of A-Si(Ge) with nonuniformly distributed nitrogenCANON KK·Filed 1984·Granted Jun 17, 1986·12 cites·96 claims
- 4252US4536459APhotoconductive member having multiple amorphous layersCANON KK·Filed 1983·Granted Aug 20, 1985·12 cites·21 claims
- 4351US5741615ALight receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and MgCANON KK·Filed 1993·Granted Apr 21, 1998·14 cites·22 claims
- 4451US4786574ALayered amorphous silicon containing photoconductive element having surface layer with specified optical band gapCANON KK·Filed 1987·Granted Nov 22, 1988·13 cites·47 claims
- 4551US4705731AMember having substrate with protruding surface light receiving layer of amorphous silicon and surface reflective layerCANON KK·Filed 1985·Granted Nov 10, 1987·8 cites·63 claims
- 4651US4696881AMember having light receiving layer with smoothly connected interfacesCANON KK·Filed 1985·Granted Sep 29, 1987·8 cites·98 claims
- 4748US5190838AElectrophotographic image-forming member with photoconductive layer comprising non-single-crystal silicon carbideCANON KK·Filed 1990·Granted Mar 2, 1993·7 cites·23 claims
- 4847US4567127APhotoconductive member comprising a hydrogenated or halogenated amorphous silicon and geranium layerCANON KK·Filed 1984·Granted Jan 28, 1986·10 cites·48 claims
- 4944US4812328AMethod for forming deposited filmCANON KK·Filed 1986·Granted Mar 14, 1989·12 cites·20 claims
- 5044US4547448APhotoconductive member comprising silicon and oxygenCANON KK·Filed 1984·Granted Oct 15, 1985·5 cites·22 claims
Showing the top 50 of 90 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →