Inventor · disambiguated record
Keisuke Shinohara
Also filed as: SHINOHARA KEISUKE
39 granted patents·4 pending applications·293 citations·filing 2006–2025
97Inventor score
Files withHRL LAB LLC23TELEDYNE SCIENT & IMAGING LLC10MICOVIC MIROSLAV2BROWN DAVID F1CORRION ANDREA1
Top patents by PatentIndex Score
43 records- 0197US8470652B1Monolithic integration of group III nitride enhancement layersBROWN DAVID F·Filed 2011·Granted Jun 25, 2013·27 cites·7 claims
- 0296US8946724B1Monolithically integrated self-aligned GaN-HEMTs and Schottky diodes and method of fabricating the sameHRL LAB LLC·Filed 2013·Granted Feb 3, 2015·37 cites·18 claims
- 0395US9954090B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2016·Granted Apr 24, 2018·8 cites·6 claims
- 0495US9142626B1Stepped field plate wide bandgap field-effect transistor and methodHRL LAB LLC·Filed 2013·Granted Sep 22, 2015·18 cites·15 claims
- 0593US10170611B1T-gate field effect transistor with non-linear channel layer and/or gate foot faceHRL LAB LLC·Filed 2016·Granted Jan 1, 2019·16 cites·15 claims
- 0692US9496197B1Near junction cooling for GaN devicesMICOVIC MIROSLAV·Filed 2014·Granted Nov 15, 2016·16 cites·13 claims
- 0791US9515068B1Monolithic integration of GaN and InP componentsHRL LAB LLC·Filed 2013·Granted Dec 6, 2016·12 cites·10 claims
- 0891US9202880B1Etch-based fabrication process for stepped field-plate wide-bandgapHRL LAB LLC·Filed 2013·Granted Dec 1, 2015·10 cites·16 claims
- 0991US8748244B1Enhancement and depletion mode GaN HMETs on the same substrateCORRION ANDREA·Filed 2012·Granted Jun 10, 2014·15 cites·6 claims
- 1090US8686473B1Apparatus and method for reducing the interface resistance in GaN heterojunction FETsMICOVIC MIROSLAV·Filed 2010·Granted Apr 1, 2014·14 cites·11 claims
- 1189US10418473B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2018·Granted Sep 17, 2019·3 cites·9 claims
- 1289US10217648B1Fabrication of microfluidic channels in diamondHRL LAB LLC·Filed 2017·Granted Feb 26, 2019·8 cites·20 claims
- 1389US9515161B1Monolithically integrated self-aligned GaN-HEMTs and schottky diodes and method of fabricating the sameHRL LAB LLC·Filed 2014·Granted Dec 6, 2016·8 cites·8 claims
- 1488US10192986B1HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the sameHRL LAB LLC·Filed 2016·Granted Jan 29, 2019·5 cites·7 claims
- 1588US9449833B1Methods of fabricating self-aligned FETS using multiple sidewall spacersHRL LAB LLC·Filed 2013·Granted Sep 20, 2016·10 cites·28 claims
- 1688US8150082B2Waterproof hearing aidSAITO ATSUSHI·Filed 2006·Granted Apr 3, 2012·19 cites·16 claims
- 1787US9929243B1Stepped field plate wide bandgap field-effect transistor and methodHRL LAB LLC·Filed 2015·Granted Mar 27, 2018·4 cites·17 claims
- 1887US9530708B1Flexible electronic circuit and method for manufacturing sameHRL LAB LLC·Filed 2013·Granted Dec 27, 2016·8 cites·11 claims
- 1987US9419122B1Etch-based fabrication process for stepped field-plate wide-bandgapHRL LAB LLC·Filed 2015·Granted Aug 16, 2016·4 cites·7 claims
- 2087US8558281B1Gate metallization methods for self-aligned sidewall gate GaN HEMTREGAN DEAN C·Filed 2011·Granted Oct 15, 2013·15 cites·10 claims
- 2186US8980759B1Method of fabricating slanted field-plate GaN heterojunction field-effect transistorHRL LAB LLC·Filed 2014·Granted Mar 17, 2015·7 cites·23 claims
- 2285US9252247B1Apparatus and method for reducing the interface resistance in GaN Heterojunction FETsHRL LAB LLC·Filed 2014·Granted Feb 2, 2016·6 cites·15 claims
- 2380US8698201B1Gate metallization methods for self-aligned sidewall gate GaN HEMTHRL LAB LLC·Filed 2013·Granted Apr 15, 2014·5 cites·15 claims
- 2479US11967619B2Laterally-gated transistors and lateral Schottky diodes with integrated lateral field plate structuresTELEDYNE SCIENT & IMAGING LLC·Filed 2020·Granted Apr 23, 2024·1 cites·13 claims
- 2578US10700201B2HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the sameHRL LAB LLC·Filed 2018·Granted Jun 30, 2020·2 cites·6 claims
- 2678US10388746B2FET with buried gate structureTELEDYNE SCIENT & IMAGING LLC·Filed 2017·Granted Aug 20, 2019·3 cites·24 claims
- 2778US8796736B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2013·Granted Aug 5, 2014·2 cites·5 claims
- 2877US12310080B2Laterally-gated transistors and lateral Schottky diodes with integrated lateral field plate structuresTELEDYNE SCIENT & IMAGING LLC·Filed 2024·Granted May 20, 2025·0 cites·18 claims
- 2975US2025254958A1Laterally-gated transistors and lateral schottky diodes with integrated lateral field plate structuresTELEDYNE SCIENT & IMAGING LLC·Filed 2025·Application pending·0 cites
- 3072US10249711B2FET with micro-scale device arrayTELEDYNE SCIENT & IMAGING LLC·Filed 2017·Granted Apr 2, 2019·2 cites·26 claims
- 3171US9378949B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2014·Granted Jun 28, 2016·1 cites·7 claims
- 3271US9379195B2HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the sameKHALIL SAMEH G·Filed 2012·Granted Jun 28, 2016·3 cites·7 claims
- 3368US8766321B2Self-aligned sidewall gate GaN HEMTHRL LAB·Filed 2012·Granted Jul 1, 2014·2 cites·6 claims
- 3462US9093394B1Method and structure for encapsulation and interconnection of transistorsHRL LAB LLC·Filed 2013·Granted Jul 28, 2015·1 cites·11 claims
- 3562US2025033954A13D Heterogeneously Integrated Power Electronic Building BlocksTELEDYNE SCIENT & IMAGING LLC·Filed 2024·Application pending·0 cites
- 3660US2024379834A1Recessed-gate high-electron-mobility transistors with doped barriers and round gate foot cornersTELEDYNE SCIENT & IMAGING LLC·Filed 2024·Application pending·0 cites
- 3755US8679969B2System for self-aligned contactsURTEAGA MIGUEL·Filed 2011·Granted Mar 25, 2014·1 cites·7 claims
- 3854US2023411505A1High linearity fet with buried gate structures and tapered channel layerTELEDYNE SCIENT & IMAGING LLC·Filed 2023·Application pending·0 cites
- 3951US9202704B2System for self-aligned contactsTELEDYNE SCIENT & IMAGING LLC·Filed 2014·Granted Dec 1, 2015·0 cites·16 claims
- 4049US9691761B1Monolithic integration of GaN and InP componentsHRL LAB LLC·Filed 2016·Granted Jun 27, 2017·0 cites·11 claims
- 4148US10056340B1Flexible electronic circuit and method for manufacturing sameHRL LAB LLC·Filed 2016·Granted Aug 21, 2018·0 cites·9 claims
- 4242US11605722B2Ohmic contact for multiple channel FETTELEDYNE SCIENT & IMAGING LLC·Filed 2020·Granted Mar 14, 2023·0 cites·14 claims
- 4337US8592983B2Method of integrating a plurality of benzocyclobutene layers with a substrate and an associated deviceSHARIFI HASAN·Filed 2011·Granted Nov 26, 2013·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →