Inventor · disambiguated record
Kenneth Steeples
Also filed as: STEEPLES KENNETH
6 granted patents·4 pending applications·51 citations·filing 1979–2007
82Inventor score
Top patents by PatentIndex Score
10 records- 0164US7403023B2Apparatus and method of measuring defects in an ion implanted wafer by heating the wafer to a treatment temperature and time to substantially stabilize interstitial defect migration while leaving the vacancy defects substantially unaltered.QC SOLUTIONS INC·Filed 2006·Granted Jul 22, 2008·3 cites·23 claims
- 0263US6911350B2Real-time in-line testing of semiconductor wafersQC SOLUTIONS INC·Filed 2003·Granted Jun 28, 2005·12 cites·23 claims
- 0355US4290825ASemiconductor devices containing protons and deuterons implanted regionsATOMIC ENERGY AUTHORITY UK·Filed 1979·Granted Sep 22, 1981·15 cites·10 claims
- 0450US4394180AMethod of forming high resistivity regions in GaAs by deuteron implantationATOMIC ENERGY AUTHORITY UK·Filed 1980·Granted Jul 19, 1983·14 cites·9 claims
- 0549US7160742B2Methods for integrated implant monitoringQC SOLUTIONS INC·Filed 2004·Granted Jan 9, 2007·3 cites·15 claims
- 0646US7119569B2Real-time in-line testing of semiconductor wafersQC SOLUTIONS INC·Filed 2004·Granted Oct 10, 2006·4 cites·17 claims
- 0739US2008048636A1Method and apparatus for silicon-on-insulator material characterizationQC SOLUTIONS INC·Filed 2007·Application pending·0 cites
- 0838US2008182347A1Methods for monitoring ion implant process in bond and cleave, silicon-on-insulator (SOI) wafer manufacturingQC SOLUTIONS INC·Filed 2007·Application pending·0 cites
- 0937US2008020549A1Method and apparatus for forming an oxide layer on semiconductorsQC SOLUTIONS INC·Filed 2006·Application pending·0 cites
- 1035US2008036464A1Probes and methods for semiconductor wafer analysisQC SOLUTIONS INC·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →