Inventor · disambiguated record
Keiichi Takanashi
Also filed as: TAKANASHI KEIICHI
31 granted patents·11 pending applications·81 citations·filing 1998–2023
95Inventor score
Files withSUMCO CORP23ORSCHEL BENNO5TAKANASHI KEIICHI5SUMITOMO METAL IND3SUMITOMO MITSUBISHI SILICON2
Top patents by PatentIndex Score
42 records- 0185US9567692B2Silicon single crystal manufacturing apparatus and silicon single crystal manufacturing methodSUMCO CORP·Filed 2013·Granted Feb 14, 2017·2 cites·7 claims
- 0285US9284660B2Apparatus of producing silicon single crystal and method of producing silicon single crystalTAKANASHI KEIICHI·Filed 2011·Granted Mar 15, 2016·2 cites·6 claims
- 0380US11618971B2Method and apparatus for manufacturing defect-free monocrystalline silicon crystalSUMCO CORP·Filed 2020·Granted Apr 4, 2023·1 cites·13 claims
- 0480US8871023B2Silicon single crystal pull-up apparatus and method of manufacturing silicon single crystalTAKANASHI KEIICHI·Filed 2011·Granted Oct 28, 2014·7 cites·8 claims
- 0578US12435443B2Method and apparatus for manufacturing defect-free monocrystalline silicon crystalSUMCO CORP·Filed 2023·Granted Oct 7, 2025·0 cites·13 claims
- 0677US10261125B2Semiconductor wafer evaluation standard setting method, semiconductor wafer evaluation method, semiconductor wafer manufacturing process evaluation method, and semiconductor wafer manufacturing methodSUMCO CORP·Filed 2017·Granted Apr 16, 2019·3 cites·9 claims
- 0775US8187378B2Silicon single crystal pulling methodTAKANASHI KEIICHI·Filed 2008·Granted May 29, 2012·5 cites·12 claims
- 0874US9289876B2Method and apparatus for polishing workSUMCO CORP·Filed 2013·Granted Mar 22, 2016·3 cites·8 claims
- 0973US9816199B2Method of manufacturing single crystalSUMCO CORP·Filed 2015·Granted Nov 14, 2017·2 cites·9 claims
- 1073US8496765B2Method for correcting speed deviations between actual and nominal pull speed during crystal growthORSCHEL BENNO·Filed 2009·Granted Jul 30, 2013·2 cites·6 claims
- 1169US10903099B2Semiconductor wafer placement position determination method and semiconductor epitaxial wafer production methodSUMCO CORP·Filed 2018·Granted Jan 26, 2021·1 cites·6 claims
- 1269US2025289090A1Apparatus for measuring thickness of workpiece, method for measuring thickness of workpiece, and system for polishing workpieceSUMCO CORP·Filed 2023·Application pending·0 cites
- 1368US8801853B2Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystalTAKANASHI KEIICHI·Filed 2006·Granted Aug 12, 2014·1 cites·12 claims
- 1468US7172656B2Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatusSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Feb 6, 2007·13 cites·12 claims
- 1565US10472733B2Silicon single crystal manufacturing methodSUMCO CORP·Filed 2016·Granted Nov 12, 2019·1 cites·6 claims
- 1663US8900033B2Wafer polishing methodTAKAISHI KAZUSHIGE·Filed 2010·Granted Dec 2, 2014·3 cites·11 claims
- 1762US9708731B2Method of producing silicon single crystalSUMCO CORP·Filed 2016·Granted Jul 18, 2017·0 cites·6 claims
- 1862US8673075B2Procedure for in-situ determination of thermal gradients at the crystal growth frontORSCHEL BENNO·Filed 2012·Granted Mar 18, 2014·0 cites·19 claims
- 1962US8414701B2Method for manufacturing silicon single crystal in which a crystallization temperature gradient is controlledTAKANASHI KEIICHI·Filed 2010·Granted Apr 9, 2013·2 cites·4 claims
- 2061US7264674B2Method for pulling a single crystalSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Sep 4, 2007·8 cites·5 claims
- 2160US2025230574A1Method and apparatus for producing silicon single crystal and method for producing silicon waferSUMCO CORP·Filed 2023·Application pending·0 cites
- 2259US8221545B2Procedure for in-situ determination of thermal gradients at the crystal growth frontORSCHEL BENNO·Filed 2008·Granted Jul 17, 2012·0 cites·10 claims
- 2359US6187090B1Methods and a device for measuring melt surface temperature within apparatus for pulling a single crystalSUMITOMO METAL IND·Filed 1998·Granted Feb 13, 2001·15 cites·10 claims
- 2458US8641822B2Method and apparatus for controlling diameter of a silicon crystal ingot in a growth processORSCHEL BENNO·Filed 2010·Granted Feb 4, 2014·0 cites·12 claims
- 2557US2025043459A1Manufacturing method of single crystal and single crystal manufacturing deviceSUMCO CORP·Filed 2022·Application pending·0 cites
- 2655US11703452B2Method and apparatus for measuring transmittance of quartz crucibleSUMCO CORP·Filed 2019·Granted Jul 18, 2023·0 cites·22 claims
- 2754US2023357950A1Manufacturing method of single crystalsSUMCO CORP·Filed 2021·Application pending·0 cites
- 2852US2025157839A1Packaging unit and transportation containerSUMCO CORP·Filed 2023·Application pending·0 cites
- 2952US2024261929A1Double-side polishing apparatus and double-side polishing method for workpiecesSUMCO CORP·Filed 2022·Application pending·0 cites
- 3052US2024019397A1Method of estimating oxygen concentration in silicon single crystal, method of manufacturing silicon single crystal, and silicon single crystal manufacturing apparatausSUMCO CORP·Filed 2021·Application pending·0 cites
- 3151US11361462B2Method of evaluating inner circumference of quartz crucible and quartz crucible inner circumference evaluation apparatusSUMCO CORP·Filed 2019·Granted Jun 14, 2022·0 cites·12 claims
- 3247US9707659B2Method and apparatus for polishing workpieceOGATA SHINICHI·Filed 2011·Granted Jul 18, 2017·0 cites·12 claims
- 3346US8012255B2Method and apparatus for controlling diameter of a silicon crystal ingot in a growth processSUMCO PHOENIX CORP·Filed 2008·Granted Sep 6, 2011·0 cites·14 claims
- 3444US2023220583A1Single crystal production apparatus and single crystal production methodSUMCO CORP·Filed 2021·Application pending·0 cites
- 3544US2010319612A1Method of producing silicon single crystalSUMCO CORP·Filed 2010·Application pending·0 cites
- 3643US8545623B2Method and apparatus for controlling the growth process of a monocrystalline silicon ingotORSCHEL BENNO·Filed 2009·Granted Oct 1, 2013·0 cites·15 claims
- 3740US6111262AMethod for measuring a diameter of a crystalSUMITOMO METAL IND·Filed 1998·Granted Aug 29, 2000·8 cites·5 claims
- 3840US2002029738A1Apparatus for pulling a single crystalFiled 2001·Application pending·0 cites
- 3936US11826870B2Apparatus and method for double-side polishing workSUMCO CORP·Filed 2019·Granted Nov 28, 2023·0 cites·14 claims
- 4036US11717931B2Apparatus and method for double-side polishing workSUMCO CORP·Filed 2018·Granted Aug 8, 2023·0 cites·12 claims
- 4132US6411391B1Crystal section shape measuring methodSUMITOMO METAL IND·Filed 1999·Granted Jun 25, 2002·2 cites·10 claims
- 4232US2021205949A1Apparatus and method for double-side polishing workpieceSUMCO CORP·Filed 2019·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Keiichi Takanashi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →