Inventor · disambiguated record
Keijiro Uehara
Also filed as: UEHARA KEIJIRO
8 granted patents·102 citations·filing 1974–2000
87Inventor score
Files withHITACHI LTD8
Top patents by PatentIndex Score
8 records- 0167US4640721AMethod of forming bipolar transistors with graft base regionsHITACHI LTD·Filed 1985·Granted Feb 3, 1987·26 cites·15 claims
- 0263US4278987AJunction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientationsHITACHI LTD·Filed 1978·Granted Jul 14, 1981·17 cites·7 claims
- 0359US4362599AMethod for making semiconductor deviceHITACHI LTD·Filed 1981·Granted Dec 7, 1982·19 cites·10 claims
- 0453US5391501AMethod for manufacturing integrated circuits with a step for replacing defective circuit elementsHITACHI LTD·Filed 1993·Granted Feb 21, 1995·22 cites·12 claims
- 0550US6342710B1Semiconductor integrated circuitHITACHI LTD·Filed 2000·Granted Jan 29, 2002·5 cites·12 claims
- 0644US6121646ASemiconductor integrated circuitHITACHI LTD·Filed 1996·Granted Sep 19, 2000·8 cites·16 claims
- 0730US4675983AMethod of making a semiconductor including forming graft/extrinsic and intrinsic base regionsHITACHI LTD·Filed 1985·Granted Jun 30, 1987·4 cites·30 claims
- 0830US3977920AMethod of fabricating semiconductor device using at least two sorts of insulating films different from each otherHITACHI LTD·Filed 1974·Granted Aug 31, 1976·1 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →