Inventor · disambiguated record
Keiji Wada
Also filed as: WADA KEIJI
103 granted patents·48 pending applications·257 citations·filing 1996–2025
99Inventor score
Top patents by PatentIndex Score
151 records- 0197US11530491B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Granted Dec 20, 2022·3 cites·16 claims
- 0290US2025079369A1Semiconductor deviceROHM CO LTD·Filed 2024·Application pending·0 cites
- 0389US10192960B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jan 29, 2019·8 cites·16 claims
- 0486US12183701B2Semiconductor deviceROHM CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 0585US10490634B2Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Nov 26, 2019·3 cites·8 claims
- 0684US9224802B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Dec 29, 2015·7 cites·9 claims
- 0783US9224877B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Dec 29, 2015·6 cites·13 claims
- 0882US11810881B2Semiconductor deviceROHM CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·21 claims
- 0981US9224816B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Dec 29, 2015·3 cites·15 claims
- 1081US8686435B2Silicon carbide semiconductor deviceMASUDA TAKEYOSHI·Filed 2012·Granted Apr 1, 2014·4 cites·24 claims
- 1181US6126080AAir conditionerSANYO ELECTRIC CO·Filed 1997·Granted Oct 3, 2000·53 cites·10 claims
- 1280US9728628B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Aug 8, 2017·3 cites·8 claims
- 1380US9627525B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Apr 18, 2017·5 cites·7 claims
- 1480US8952393B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Feb 10, 2015·5 cites·9 claims
- 1580US8525187B2Insulated gate bipolar transistorHARADA SHIN·Filed 2010·Granted Sep 3, 2013·6 cites·5 claims
- 1680US8502236B2Insulated gate field effect transistorHARADA SHIN·Filed 2010·Granted Aug 6, 2013·6 cites·5 claims
- 1780US2025364991A1Gate driver, insulation module, low-voltage circuit unit, and high-voltage circuit unitROHM CO LTD·Filed 2025·Application pending·0 cites
- 1879US10396163B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Aug 27, 2019·3 cites·22 claims
- 1977US9384981B2Method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jul 5, 2016·2 cites·6 claims
- 2077US9012922B2Silicon carbide semiconductor device and method for manufacturing sameHIYOSHI TORU·Filed 2012·Granted Apr 21, 2015·4 cites·10 claims
- 2177US8513673B2MOSFET and method for manufacturing MOSFETWADA KEIJI·Filed 2010·Granted Aug 20, 2013·5 cites·18 claims
- 2277US6453689B2Refrigerating/air-conditioning apparatus and control method thereforSANYO ELECTRIC CO·Filed 2001·Granted Sep 24, 2002·29 cites·10 claims
- 2376US11545454B2Semiconductor deviceROHM CO LTD·Filed 2021·Granted Jan 3, 2023·0 cites·18 claims
- 2476US10770550B2Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Sep 8, 2020·1 cites·9 claims
- 2576US8981385B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 17, 2015·4 cites·5 claims
- 2676US8686434B2Silicon carbide semiconductor device and method for manufacturing the sameHARADA SHIN·Filed 2009·Granted Apr 1, 2014·4 cites·14 claims
- 2775US11735415B2Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Aug 22, 2023·2 cites·20 claims
- 2875US8536583B2MOSFET and method for manufacturing MOSFETWADA KEIJI·Filed 2010·Granted Sep 17, 2013·4 cites·10 claims
- 2975US8513676B2Semiconductor device and method for manufacturing sameHARADA SHIN·Filed 2010·Granted Aug 20, 2013·3 cites·20 claims
- 3074US9276105B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 1, 2016·3 cites·8 claims
- 3173US11011489B2Semiconductor deviceROHM CO LTD·Filed 2020·Granted May 18, 2021·0 cites·19 claims
- 3273US8610132B2Semiconductor device and method for manufacturing semiconductor deviceMASUDA TAKEYOSHI·Filed 2012·Granted Dec 17, 2013·2 cites·6 claims
- 3372US12407347B2Gate driver, insulation module, low-voltage circuit unit, and high-voltage circuit unitROHM CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·13 claims
- 3472US10504996B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Dec 10, 2019·1 cites·4 claims
- 3572US9887263B2Silicon carbide semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Feb 6, 2018·2 cites·6 claims
- 3672US9728633B2Silicon carbide semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Aug 8, 2017·2 cites·9 claims
- 3771US8803252B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Aug 12, 2014·2 cites·9 claims
- 3870US11053607B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jul 6, 2021·1 cites·13 claims
- 3970US9099553B2Semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Aug 4, 2015·2 cites·11 claims
- 4070US8846531B2Method of manufacturing an ohmic electrode containing titanium, aluminum and silicon on a silicon carbide surfaceTAMASO HIDETO·Filed 2010·Granted Sep 30, 2014·3 cites·10 claims
- 4170US8686438B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Apr 1, 2014·2 cites·10 claims
- 4269US11004941B2Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted May 11, 2021·0 cites·12 claims
- 4369US10651144B2Semiconductor deviceROHM CO LTD·Filed 2019·Granted May 12, 2020·0 cites·23 claims
- 4469US8610131B2Silicon carbide insulated-gate bipolar transistorWADA KEIJI·Filed 2012·Granted Dec 17, 2013·2 cites·23 claims
- 4567US10229836B2Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Mar 12, 2019·1 cites·6 claims
- 4667US10211284B2Silicon carbide semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Feb 19, 2019·2 cites·10 claims
- 4767US9680006B2Silicon carbide semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 13, 2017·1 cites·5 claims
- 4867US9299790B2Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 29, 2016·2 cites·5 claims
- 4967US9184056B2Semiconductor device and method for manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Nov 10, 2015·1 cites·4 claims
- 5067US8728877B2Method for manufacturing silicon carbide semiconductor device with a single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted May 20, 2014·2 cites·9 claims
Showing the top 50 of 151 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →