Inventor · disambiguated record
Kinya Goto
Also filed as: GOTO KINYA
17 granted patents·3 pending applications·102 citations·filing 1999–2014
93Inventor score
Files withMITSUBISHI ELECTRIC CORP6RENESAS TECH CORP6RENESAS ELECTRONICS CORP4MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2FURUSAWA TAKESHI1
Top patents by PatentIndex Score
20 records- 0192US7605448B2Semiconductor device with seal ringRENESAS TECH CORP·Filed 2005·Granted Oct 20, 2009·22 cites·35 claims
- 0281US8018030B2Semiconductor chip with seal ring and sacrificial corner patternRENESAS ELECTRONICS CORP·Filed 2009·Granted Sep 13, 2011·7 cites·36 claims
- 0380US7208408B2Method for fabricating a dual damascene contact in an insulating film having density gradually varying in the thickness directionMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Apr 24, 2007·6 cites·9 claims
- 0480US6734489B2Semiconductor element and MIM-type capacitor formed in different layers of a semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted May 11, 2004·31 cites·20 claims
- 0575US8963291B2Semiconductor chip with seal ring and sacrificial corner patternFURUSAWA TAKESHI·Filed 2011·Granted Feb 24, 2015·3 cites·8 claims
- 0667US9368459B2Semiconductor chip with seal ring and sacrificial corner patternRENESAS ELECTRONICS CORP·Filed 2014·Granted Jun 14, 2016·1 cites·1 claims
- 0767US7602063B2Semiconductor device and manufacturing method thereforRENESAS TECH CORP·Filed 2005·Granted Oct 13, 2009·2 cites·13 claims
- 0863US7671473B2Semiconductor device and method of fabricating the sameRENESAS TECH CORP·Filed 2006·Granted Mar 2, 2010·2 cites·20 claims
- 0963US6930394B2Electronic device includes an insulating film having density or carbon concentration varying gradually in the direction of the thickness and a conductive film formed thereinMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Aug 16, 2005·7 cites·14 claims
- 1061US6399424B1Method of manufacturing contact structureMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 4, 2002·11 cites·15 claims
- 1160US8390135B2Semiconductor deviceOKA YOSHIHIRO·Filed 2011·Granted Mar 5, 2013·2 cites·17 claims
- 1256US7960279B2Semiconductor device and manufacturing method thereforRENESAS ELECTRONICS CORP·Filed 2009·Granted Jun 14, 2011·0 cites·9 claims
- 1349US6737319B2Method of manufacturing semiconductor device and semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted May 18, 2004·3 cites·8 claims
- 1446US6509648B1Method of manufacturing semiconductor device and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 21, 2003·2 cites·6 claims
- 1545US7981790B2Semiconductor device and method of fabricating the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted Jul 19, 2011·0 cites·6 claims
- 1645US2008093709A1Manufacturing method of semiconductor device and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Application pending·0 cites
- 1743US2007114668A1Semiconductor deviceRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 1841US2006175705A1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 1940US6551921B2Method of polishing a stack of dielectric layers including a fluorine containing silicon oxide layerMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 22, 2003·0 cites·11 claims
- 2034US6222256B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 24, 2001·3 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →