Inventor · disambiguated record
Ki-Vin Im
Also filed as: IM KI-VIN · YEO JAE-HYUN
34 granted patents·26 pending applications·227 citations·filing 2003–2025
97Inventor score
Top patents by PatentIndex Score
60 records- 0193US9269720B1Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 23, 2016·11 cites·20 claims
- 0293US7871891B2Method of manufacturing semiconductor devices including capacitor support padsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 18, 2011·29 cites·18 claims
- 0390US11973106B2Semiconductor device and method for manufacturing the sameSK HYNIX INC·Filed 2022·Granted Apr 30, 2024·1 cites·11 claims
- 0490US9716094B2Semiconductor device having capacitor and method of fabricating the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 25, 2017·7 cites·20 claims
- 0590US9184227B1Methods of manufacturing semiconductor devices having self-aligned contact padsKIM YOUNG-KUK·Filed 2014·Granted Nov 10, 2015·10 cites·13 claims
- 0688US11410813B2Semiconductor device with a booster layer and method for fabricating the sameSK HYNIX INC·Filed 2020·Granted Aug 9, 2022·2 cites·28 claims
- 0788US9287270B2Semiconductor device and fabricating method thereofOH JUNG-HWAN·Filed 2014·Granted Mar 15, 2016·11 cites·20 claims
- 0888US7741222B2Etch stop structure and method of manufacture, and semiconductor device and method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 22, 2010·17 cites·11 claims
- 0987US8546270B2Atomic layer deposition apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 1, 2013·8 cites·4 claims
- 1087US8394201B2Atomic layer deposition apparatusKIM KI-HYUN·Filed 2009·Granted Mar 12, 2013·13 cites·15 claims
- 1186US6897106B2Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 24, 2005·29 cites·12 claims
- 1284US11469310B2Semiconductor deviceSK HYNIX INC·Filed 2020·Granted Oct 11, 2022·1 cites·18 claims
- 1382US7514315B2Methods of forming capacitor structures having aluminum oxide diffusion barriersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 7, 2009·8 cites·8 claims
- 1482US6946342B2Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 20, 2005·22 cites·41 claims
- 1581US9240414B1Semiconductor devices having self-aligned contact padsKIM YOUNG-KUK·Filed 2015·Granted Jan 19, 2016·3 cites·7 claims
- 1681US8941164B2Semiconductor devices including capacitor support padsCHO YOUNG-KYU·Filed 2013·Granted Jan 27, 2015·5 cites·29 claims
- 1781US8159012B2Semiconductor device including insulating layer of cubic system or tetragonal systemLEE JONG-CHEOL·Filed 2008·Granted Apr 17, 2012·7 cites·8 claims
- 1881US7759718B2Method manufacturing capacitor dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·7 cites·1 claims
- 1979US12199140B2Semiconductor device and method for manufacturing the sameSK HYNIX INC·Filed 2024·Granted Jan 14, 2025·0 cites·16 claims
- 2076US7838438B2Dielectric layer, method of manufacturing the dielectric layer and method of manufacturing capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 23, 2010·5 cites·16 claims
- 2176US2025081482A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2274US7791125B2Semiconductor devices having dielectric layers and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·4 cites·7 claims
- 2373US8405136B2Semiconductor devices including capacitor support padsCHO YOUNG-KYU·Filed 2010·Granted Mar 26, 2013·3 cites·21 claims
- 2471US12106904B2Semiconductor device with a booster layer and method for fabricating the sameSK HYNIX INC·Filed 2022·Granted Oct 1, 2024·0 cites·15 claims
- 2571US7485585B2Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 3, 2009·3 cites·17 claims
- 2670US12218182B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2021·Granted Feb 4, 2025·0 cites·16 claims
- 2770US2025254898A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2025·Application pending·0 cites
- 2868US2022416055A1Semiconductor deviceSK HYNIX INC·Filed 2022·Application pending·0 cites
- 2967US12317520B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2022·Granted May 27, 2025·0 cites·12 claims
- 3067US7824501B2In-situ method of cleaning vaporizer during dielectric layer deposition processSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 2, 2010·2 cites·15 claims
- 3166US9646971B2Semiconductor devices including nanowire capacitors and fabricating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 9, 2017·1 cites·20 claims
- 3266US7723182B2Storage electrode of a capacitor and a method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 25, 2010·3 cites·15 claims
- 3366US7094712B2High performance MIS capacitor with HfO2 dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 22, 2006·10 cites·27 claims
- 3462US2025022655A1Semiconductor device with a booster layer and method for fabricating the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 3561US8339765B2CapacitorCHOI HOON-SANG·Filed 2009·Granted Dec 25, 2012·3 cites·9 claims
- 3656US8399364B2Methods of fabricating semiconductor devices including multilayer dielectric layersKIM KIL-CHUL·Filed 2011·Granted Mar 19, 2013·2 cites·11 claims
- 3751US8710564B2Semiconductor device including insulating layer of cubic system or tetragonal systemLEE JONG-CHEOL·Filed 2012·Granted Apr 29, 2014·0 cites·9 claims
- 3850US2007259212A1Methods of forming metal thin films, lanthanum oxide films, and high dielectric films for semiconductor devices using atomic layer depositionPARK KI-YEON·Filed 2007·Application pending·0 cites
- 3950US2009195962A1Multilayer electrode structures including capacitor structures having aluminum oxide diffusion barriersSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4049US2006084225A1Apparatus for forming dielectric structures in integrated circuitsPARK IN-SUNG·Filed 2005·Application pending·0 cites
- 4148US2005272272A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4246US2005081787A1Apparatus and method for supplying a source, and method of depositing an atomic layer using the sameFiled 2004·Application pending·0 cites
- 4345US2009309187A1Semiconductor Device and Method of Fabricating the SameCHOI JAE-HYOUNG·Filed 2009·Application pending·0 cites
- 4445US2015311297A1Semiconductor device and method of forming thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 4544US8357593B2Methods of removing water from semiconductor substrates and methods of depositing atomic layers using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 22, 2013·0 cites·10 claims
- 4644US2005087791A1Capacitor of semiconductor memory device that has composite A12O3/HfO2 dielectric layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 4744US2007098892A1Method of forming a layer and method of manufacturing a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4844US2014231958A1Capacitors having dielectric layers with different band gaps and semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 4943US2005051828A1Methods of forming metal thin films, lanthanum oxide films, and high dielectric films for semiconductor devices using atomic layer depositionFiled 2004·Application pending·0 cites
- 5043US2004166628A1Methods and apparatus for forming dielectric structures in integrated circuitsPARK IN-SUNG·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →