Inventor · disambiguated record
Kiyofumi Nakaya
Also filed as: NAKAYA KIYOFUMI
10 granted patents·2 pending applications·49 citations·filing 2006–2011
85Inventor score
Top patents by PatentIndex Score
12 records- 0190US7964915B2Semiconductor device having a DMOS structureSANYO ELECTRIC CO·Filed 2007·Granted Jun 21, 2011·22 cites·11 claims
- 0274US7737523B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2006·Granted Jun 15, 2010·11 cites·7 claims
- 0372US7649224B2DMOS with high source-drain breakdown voltage, small on- resistance, and high current driving capacitySANYO ELECTRIC CO·Filed 2007·Granted Jan 19, 2010·5 cites·8 claims
- 0470US7705399B2Semiconductor device with field insulation film formed thereinSANYO ELECTRIC CO·Filed 2007·Granted Apr 27, 2010·4 cites·8 claims
- 0566US7652307B2Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltageSANYO ELECTRIC CO·Filed 2006·Granted Jan 26, 2010·3 cites·11 claims
- 0659US7825442B2Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2007·Granted Nov 2, 2010·2 cites·6 claims
- 0755US2006244091A1Semiconductor deviceKIKUCHI SHUICHI·Filed 2006·Application pending·0 cites
- 0854US8723258B2Electrostatic discharge (ESD) tolerance for a lateral double diffusion metal oxide semiconductor (LDMOS) transistorNAKAYA KIYOFUMI·Filed 2011·Granted May 13, 2014·2 cites·17 claims
- 0943US8552469B2Semiconductor deviceKIKUCHI SHUICHI·Filed 2007·Granted Oct 8, 2013·0 cites·12 claims
- 1041US8558307B2Semiconductor device with diffused MOS transistor and manufacturing method of the sameKIKUCHI SHUICHI·Filed 2007·Granted Oct 15, 2013·0 cites·5 claims
- 1141US2008079110A1Semiconductor deviceSANYO SEMICONDUCTOR CO LTD·Filed 2007·Application pending·0 cites
- 1236US7999333B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2006·Granted Aug 16, 2011·0 cites·6 claims
Join the waitlist — get patent alerts
Get an alert when Kiyofumi Nakaya files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →