Inventor · disambiguated record
Kiyonori Ohyu
Also filed as: OHYU KIYONORI
16 granted patents·1 pending application·423 citations·filing 1985–2007
94Inventor score
Files withHITACHI LTD10ELPIDA MEMORY INC4AGENCY IND SCIENCE TECHN1HITACHI ULSI SYS CO LTD1HITCHI LTD1
Top patents by PatentIndex Score
17 records- 0189US6743673B2Semiconductor integrated circuitry and method for manufacturing the circuitryHITACHI LTD·Filed 2002·Granted Jun 1, 2004·64 cites·11 claims
- 0289US6503794B1Semiconductor integrated circuit device and method for manufacturing the sameHITACHI LTD·Filed 1998·Granted Jan 7, 2003·96 cites·13 claims
- 0384US4655875AIon implantation processHITACHI LTD·Filed 1986·Granted Apr 7, 1987·64 cites·10 claims
- 0476US4729964AMethod of forming twin doped regions of the same depth by high energy implantHITACHI LTD·Filed 1986·Granted Mar 8, 1988·51 cites·19 claims
- 0574US6291847B1Semiconductor integrated circuit device and process for manufacturing the sameHITACHI LTD·Filed 1998·Granted Sep 18, 2001·30 cites·14 claims
- 0670US4808546ASOI process for forming a thin film transistor using solid phase epitaxyHITACHI LTD·Filed 1987·Granted Feb 28, 1989·37 cites·24 claims
- 0759US6734479B1Semiconductor integrated circuit device and the method of producing the sameHITACHI LTD·Filed 1999·Granted May 11, 2004·25 cites·19 claims
- 0856US5426326ASemiconductor device including arrangement for reducing junction degradationHITACHI LTD·Filed 1993·Granted Jun 20, 1995·17 cites·26 claims
- 0950US7081649B2Semiconductor integrated circuitry and method for manufacturing the circuitryHITACHI ULSI SYS CO LTD·Filed 2004·Granted Jul 25, 2006·6 cites·14 claims
- 1049US7186632B2Method of fabricating a semiconductor device having a decreased concentration of phosphorus impurities in polysiliconELPIDA MEMORY INC·Filed 2003·Granted Mar 6, 2007·5 cites·14 claims
- 1146US6573546B2Semiconductor integrated circuit device and process for manufacturing the sameHITACHI LTD·Filed 2001·Granted Jun 3, 2003·2 cites·3 claims
- 1246US4742025AMethod of fabricating a semiconductor device including selective etching of a silicide layerHITACHI LTD·Filed 1985·Granted May 3, 1988·16 cites·13 claims
- 1345US7737505B2Semiconductor device and method of forming the sameELPIDA MEMORY INC·Filed 2007·Granted Jun 15, 2010·0 cites·18 claims
- 1443US7700431B2Method for manufacturing a semiconductor device having polysilicon plugsELPIDA MEMORY INC·Filed 2005·Granted Apr 20, 2010·0 cites·20 claims
- 1542US6800888B2Semiconductor integrated circuitry and method for manufacturing the circuitryHITCHI LTD·Filed 2004·Granted Oct 5, 2004·3 cites·16 claims
- 1642US2008061339A1Semiconductor device having capacitance element, arranged close to mos transistor and having dielectric made of electrostrictive materialELPIDA MEMORY INC·Filed 2007·Application pending·0 cites
- 1736US5066355AMethod of producing hetero structureAGENCY IND SCIENCE TECHN·Filed 1989·Granted Nov 19, 1991·7 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →