Inventor · disambiguated record
Kirk D. Prall
Also filed as: PRALL KIRK · PRALL KIRK D
225 granted patents·8 pending applications·4,376 citations·filing 1992–2024
99Inventor score
Files withMICRON TECHNOLOGY INC208PRALL KIRK D4SANDHU GURTEJ S3LIU ZENGTAO T2MICRON SEMICONDUCTOR INC2
Top patents by PatentIndex Score
233 records- 0199US7279740B2Band-engineered multi-gated non-volatile memory device with enhanced attributesMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 9, 2007·156 cites·64 claims
- 0299US7112815B2Multi-layer memory arraysMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 26, 2006·228 cites·38 claims
- 0399US6522584B1Programming methods for multi-level flash EEPROMsMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 18, 2003·277 cites·11 claims
- 0498US9761715B2Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistorsMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 12, 2017·22 cites·7 claims
- 0598US9305929B1Memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 5, 2016·60 cites·35 claims
- 0698US9263577B2Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistorsMICRON TECHNOLOGY INC·Filed 2014·Granted Feb 16, 2016·35 cites·14 claims
- 0798US7616482B2Multi-state memory cell with asymmetric charge trappingMICRON TECHNOLOGY INC·Filed 2006·Granted Nov 10, 2009·63 cites·11 claims
- 0898US5341016ALow resistance device element and interconnection structureMICRON SEMICONDUCTOR INC·Filed 1993·Granted Aug 23, 1994·201 cites·18 claims
- 0998US5281548APlug-based floating gate memoryMICRON TECHNOLOGY INC·Filed 1992·Granted Jan 25, 1994·182 cites·2 claims
- 1097US9721639B1Memory cell imprint avoidanceMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 1, 2017·23 cites·25 claims
- 1197US8063436B2Memory cells configured to allow for erasure by enhanced F-N tunneling of holes from a control gate to a charge trapping materialBHATTACHARYYA ARUP·Filed 2010·Granted Nov 22, 2011·25 cites·20 claims
- 1297US5424569AArray of non-volatile sonos memory cellsMICRON TECHNOLOGY INC·Filed 1994·Granted Jun 13, 1995·135 cites·5 claims
- 1396US9673203B2Memory cellsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 6, 2017·7 cites·28 claims
- 1496US6514842B1Low resistance gate flash memoryMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 4, 2003·104 cites·26 claims
- 1595US7776744B2Pitch multiplication spacers and methods of forming the sameMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 17, 2010·26 cites·15 claims
- 1695US7749848B2Band-engineered multi-gated non-volatile memory device with enhanced attributesMICRON TECHNOLOGY INC·Filed 2007·Granted Jul 6, 2010·27 cites·25 claims
- 1794US9887204B2Memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 6, 2018·4 cites·19 claims
- 1894US6333556B1Insulating materialsMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 25, 2001·65 cites·4 claims
- 1994US6288419B1Low resistance gate flash memoryMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 11, 2001·103 cites·40 claims
- 2093US10217753B2Memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 26, 2019·3 cites·16 claims
- 2193US7220634B2NROM memory cell, memory array, related devices and methodsMICRON TECHNOLOGY INC·Filed 2003·Granted May 22, 2007·54 cites·15 claims
- 2293US7053444B2Method and apparatus for a flash memory device comprising a source local interconnectMICRON TECHNOLOGY INC·Filed 2005·Granted May 30, 2006·23 cites·20 claims
- 2393US5990021AIntegrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufactureMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 23, 1999·156 cites·11 claims
- 2493US5866453AEtch process for aligning a capacitor structure and an adjacent contact corridorMICRON TECHNOLOGY INC·Filed 1995·Granted Feb 2, 1999·80 cites·17 claims
- 2592US5488011AMethod of forming contact areas between vertical conductorsMICRON TECHNOLOGY INC·Filed 1994·Granted Jan 30, 1996·158 cites·18 claims
- 2691US6624024B1Method and apparatus for a flash memory device comprising a source local interconnectMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 23, 2003·48 cites·10 claims
- 2791US6313046B1Method of forming materials between conductive electrical components, and insulating materialsMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 6, 2001·50 cites·4 claims
- 2891US6066559AMethod for forming a semiconductor connection with a top surface having an enlarged recessMICRON TECHNOLOGY INC·Filed 1997·Granted May 23, 2000·74 cites·17 claims
- 2991US5387534AMethod of forming an array of non-volatile sonos memory cells and array of non-violatile sonos memory cellsMICRON SEMICONDUCTOR INC·Filed 1994·Granted Feb 7, 1995·63 cites·9 claims
- 3090US10629732B1Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistorsMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 21, 2020·4 cites·15 claims
- 3190US10083732B2Memory cell imprint avoidanceMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 25, 2018·6 cites·20 claims
- 3290US9679642B2Cross-point memory compensationMICRON TECHNOLOGY INC·Filed 2015·Granted Jun 13, 2017·7 cites·14 claims
- 3390US6845039B2Programming methods for multi-level flash EEPROMSMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 18, 2005·36 cites·9 claims
- 3490US5976976AMethod of forming titanium silicide and titanium by chemical vapor depositionMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 2, 1999·65 cites·15 claims
- 3589US9099314B2Pitch multiplication spacers and methods of forming the sameSANDHU GURTEJ S·Filed 2010·Granted Aug 4, 2015·7 cites·15 claims
- 3689US8796751B2Transistors, memory cells and semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2012·Granted Aug 5, 2014·8 cites·22 claims
- 3789US7956402B2Double-doped polysilicon floating gateMICRON TECHNOLOGY INC·Filed 2008·Granted Jun 7, 2011·12 cites·24 claims
- 3888US9058857B2Cross-point memory compensationLIU ZENGTAO T·Filed 2011·Granted Jun 16, 2015·8 cites·11 claims
- 3988US6337244B1Method of forming flash memoryMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 8, 2002·36 cites·72 claims
- 4086US9590066B2Transistors, memory cells and semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2016·Granted Mar 7, 2017·5 cites·8 claims
- 4186US6924186B2Method of forming a memory device and semiconductor deviceMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 2, 2005·29 cites·23 claims
- 4286US5345104AFlash memory cell having antimony drain for reduced drain voltage during programmingMICRON TECHNOLOGY INC·Filed 1993·Granted Sep 6, 1994·65 cites·8 claims
- 4385US10679696B2Cross-point memory compensationMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 9, 2020·4 cites·12 claims
- 4485US8441056B2NROM memory cell, memory array, related devices and methodsPRALL KIRK D·Filed 2010·Granted May 14, 2013·7 cites·19 claims
- 4585US7824994B2Method of forming memory devices by performing halogen ion implantation and diffusion processesMICRON TECHNOLOGY INC·Filed 2008·Granted Nov 2, 2010·6 cites·24 claims
- 4685US7560769B2Non-volatile memory cell device and methodsMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 14, 2009·10 cites·23 claims
- 4785US7157305B2Forming multi-layer memory arraysMICRON TECHNOLOGY INC·Filed 2006·Granted Jan 2, 2007·13 cites·40 claims
- 4885US6649453B1Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operationMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 18, 2003·19 cites·52 claims
- 4985US5892285ASemiconductor connection with a top surface having an enlarged recessMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 6, 1999·48 cites·14 claims
- 5085US5858865AMethod of forming contact plugsMICRON TECHNOLOGY INC·Filed 1995·Granted Jan 12, 1999·50 cites·25 claims
Showing the top 50 of 233 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →