Inventor · disambiguated record
Kiyoto Watabe
Also filed as: WATABE KIYOTO
17 granted patents·1 pending application·727 citations·filing 1985–2022
96Inventor score
Top patents by PatentIndex Score
18 records- 0193US5146291AMIS device having lightly doped drain structureMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 8, 1992·91 cites·3 claims
- 0293US5051948AContent addressable memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 24, 1991·81 cites·21 claims
- 0392US4971922AMethod of fabricating semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 20, 1990·62 cites·3 claims
- 0491US4727038AMethod of fabricating semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1985·Granted Feb 23, 1988·61 cites·7 claims
- 0587US6664822B2Driving device having dummy circuitMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 16, 2003·36 cites·9 claims
- 0686US4977105AMethod for manufacturing interconnection structure in semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Dec 11, 1990·83 cites·4 claims
- 0780US5217913AMethod of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 8, 1993·48 cites·4 claims
- 0877US6642599B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 4, 2003·53 cites·16 claims
- 0976US5654561AInsulated gate bipolar transistor with multiple buffer layersMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 5, 1997·41 cites·14 claims
- 1076US5559348ASemiconductor device having insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 24, 1996·41 cites·13 claims
- 1173US6198130B1Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 6, 2001·41 cites·16 claims
- 1265US5525530AMethod of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jun 11, 1996·22 cites·7 claims
- 1364US6531894B2Pulse generation circuit and a drive circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Mar 11, 2003·11 cites·16 claims
- 1459US4872050AInterconnection structure in semiconductor device and manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Oct 3, 1989·26 cites·8 claims
- 1545US5541440AIsolation structure for semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jul 30, 1996·17 cites·1 claims
- 1643US5753957ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 19, 1998·9 cites·7 claims
- 1740US2025253846A1Gate drive device, and gate drive systemUNIV TOKYO·Filed 2022·Application pending·0 cites
- 1837US5869377AMethod of fabrication LDD semiconductor device with amorphous regionsMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Feb 9, 1999·4 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →