Inventor · disambiguated record
Kiminori Watanabe
Also filed as: WATANABE KIMINORI
24 granted patents·4 pending applications·869 citations·filing 1985–2015
97Inventor score
Top patents by PatentIndex Score
28 records- 0197US5105243AConductivity-modulation metal oxide field effect transistor with single gate structureTOSHIBA KK·Filed 1989·Granted Apr 14, 1992·165 cites·12 claims
- 0296US4672407AConductivity modulated MOSFETTOSHIBA KK·Filed 1985·Granted Jun 9, 1987·83 cites·18 claims
- 0393US4928155ALateral conductivity modulated MOSFETTOSHIBA KK·Filed 1988·Granted May 22, 1990·54 cites·6 claims
- 0490US4878957ADielectrically isolated semiconductor substrateTOSHIBA KK·Filed 1989·Granted Nov 7, 1989·90 cites·5 claims
- 0590US4680604AConductivity modulated MOS transistor deviceTOSHIBA KK·Filed 1986·Granted Jul 14, 1987·58 cites·5 claims
- 0688US5068700ALateral conductivity modulated mosfetTOSHIBA KK·Filed 1990·Granted Nov 26, 1991·80 cites·21 claims
- 0787US4782372ALateral conductivity modulated MOSFETTOSHIBA KK·Filed 1987·Granted Nov 1, 1988·33 cites·4 claims
- 0884US6489653B2Lateral high-breakdown-voltage transistorTOSHIBA KK·Filed 2000·Granted Dec 3, 2002·31 cites·7 claims
- 0983US4980743AConductivity-modulation metal oxide semiconductor field effect transistorTOSHIBA KK·Filed 1988·Granted Dec 25, 1990·42 cites·5 claims
- 1082US5086332APlanar semiconductor device having high breakdown voltageTOSHIBA KK·Filed 1989·Granted Feb 4, 1992·60 cites·4 claims
- 1180US5093701AConductivity modulated mosfetTOSHIBA KK·Filed 1988·Granted Mar 3, 1992·22 cites·5 claims
- 1271US4881120AConductive modulated MOSFETTOSHIBA KK·Filed 1987·Granted Nov 14, 1989·16 cites·13 claims
- 1370US5086323AConductivity modulated mosfetTOSHIBA KK·Filed 1991·Granted Feb 4, 1992·18 cites·11 claims
- 1466US6025622AConductivity modulated MOSFETTOSHIBA KK·Filed 1998·Granted Feb 15, 2000·14 cites·9 claims
- 1566US5286984AConductivity modulated MOSFETTOSHIBA KK·Filed 1991·Granted Feb 15, 1994·27 cites·11 claims
- 1657US5168333AConductivity-modulation metal oxide semiconductor field effect transistorTOSHIBA KK·Filed 1991·Granted Dec 1, 1992·18 cites·18 claims
- 1756US6989568B2Lateral high-breakdown-voltage transistor having drain contact regionTOSHIBA KK·Filed 2003·Granted Jan 24, 2006·6 cites·3 claims
- 1854US5463231AMethod of operating thyristor with insulated gatesTOSHIBA KK·Filed 1994·Granted Oct 31, 1995·13 cites·20 claims
- 1951US6707104B2Lateral high-breakdown-voltage transistorTOSHIBA KK·Filed 2002·Granted Mar 16, 2004·4 cites·6 claims
- 2049US5428228AMethod of operating thyristor with insulated gatesTOSHIBA KK·Filed 1993·Granted Jun 27, 1995·11 cites·20 claims
- 2145US5237186AConductivity-modulation metal oxide field effect transistor with single gate structureTOSHIBA KK·Filed 1992·Granted Aug 17, 1993·10 cites·6 claims
- 2239US5124773AConductivity-modulation metal oxide semiconductor field effect transistorTOSHIBA KK·Filed 1990·Granted Jun 23, 1992·7 cites·18 claims
- 2339US2007108518A1Semiconductor deviceTOSHIBA KK·Filed 2006·Application pending·0 cites
- 2439US2008029809A1Semiconductor device having a vertical transistor structureMORIOKA JUN·Filed 2007·Application pending·0 cites
- 2538US5780887AConductivity modulated MOSFETTOSHIBA KK·Filed 1994·Granted Jul 14, 1998·3 cites·4 claims
- 2635US5315134AThyristor with insulated gateTOSHIBA KK·Filed 1992·Granted May 24, 1994·4 cites·16 claims
- 2734US2016079218A1Electrostatic protection device and light-emitting moduleMURATA MANUFACTURING CO·Filed 2015·Application pending·0 cites
- 2823US2012139005A1Semiconductor deviceIKIMURA TAKEHITO·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →