Inventor · disambiguated record
Koustav Ganguly
Also filed as: Ganguly Koustav
5 granted patents·8 pending applications·3 citations·filing 2019–2025
66Inventor score
Top patents by PatentIndex Score
13 records- 0181US11244943B2Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel materialINTEL CORP·Filed 2019·Granted Feb 8, 2022·2 cites·21 claims
- 0280US12119387B2Low resistance approaches for fabricating contacts and the resulting structuresINTEL CORP·Filed 2020·Granted Oct 15, 2024·1 cites·10 claims
- 0377US2025227956A1Contact resistance reduction in transistor devices with metallization on both sidesINTEL CORP·Filed 2025·Application pending·0 cites
- 0477US2024347610A1Contact resistance reduction in transistor devices with metallization on both sidesINTEL CORP·Filed 2024·Application pending·0 cites
- 0569US11996404B2Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel materialINTEL CORP·Filed 2021·Granted May 28, 2024·0 cites·18 claims
- 0668US12342574B2Contact resistance reduction in transistor devices with metallization on both sidesINTEL CORP·Filed 2020·Granted Jun 24, 2025·0 cites·16 claims
- 0753US12266570B2Self-aligned interconnect structures and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 1, 2025·0 cites·20 claims
- 0850US2023197777A1Source or drain metallization prior to contact formation in stacked transistorsINTEL CORP·Filed 2021·Application pending·0 cites
- 0948US2023095191A1Transistors with reduced epitaxial source/drain span via etch-back for improved cell scalingINTEL CORP·Filed 2021·Application pending·0 cites
- 1047US2022199402A1Source & drain dopant diffusion barriers for n-type germanium transistorsINTEL CORP·Filed 2020·Application pending·0 cites
- 1144US2021408283A1Gate-all-around integrated circuit structures having strained source or drain structures on insulatorINTEL CORP·Filed 2020·Application pending·0 cites
- 1244US2021408284A1Gate-all-around integrated circuit structures having strained source or drain structures on gate dielectric layerINTEL CORP·Filed 2020·Application pending·0 cites
- 1343US2021407996A1Gate-all-around integrated circuit structures having strained dual nanoribbon channel structuresAGRAWAL ASHISH·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →