Inventor · disambiguated record
Konrad Hieber
Also filed as: HIEBER KONRAD
23 granted patents·700 citations·filing 1973–1997
97Inventor score
Files withSIEMENS AG23
Top patents by PatentIndex Score
23 records- 0199US4510670AMethod for the manufacture of integrated MOS-field effect transistor circuits silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductorsSIEMENS AG·Filed 1983·Granted Apr 16, 1985·204 cites·14 claims
- 0290US4767496AMethod for controlling and supervising etching processesSIEMENS AG·Filed 1987·Granted Aug 30, 1988·43 cites·7 claims
- 0387US4543576ASystem for measuring electrical resistance and temperature during manufacture of thin, conductive films deposited on substrates by means of evaporation or sputter depositionSIEMENS AG·Filed 1982·Granted Sep 24, 1985·43 cites·19 claims
- 0482US5478780AMethod and apparatus for producing conductive layers or structures for VLSI circuitsSIEMENS AG·Filed 1992·Granted Dec 26, 1995·57 cites·3 claims
- 0576US4414274AThin film electrical resistors and process of producing the sameSIEMENS AG·Filed 1982·Granted Nov 8, 1983·18 cites·3 claims
- 0675US4608271AMethod for the manufacture of metal silicide layers by means of reduced pressure gas phase depositionSIEMENS AG·Filed 1985·Granted Aug 26, 1986·36 cites·9 claims
- 0774US4810335AMethod for monitoring etching processesSIEMENS AG·Filed 1988·Granted Mar 7, 1989·18 cites·11 claims
- 0872US4501769AMethod for selective deposition of layer structures consisting of silicides of HMP metals on silicon substrates and products so-formedSIEMENS AG·Filed 1983·Granted Feb 26, 1985·26 cites·11 claims
- 0972US4331702AMethod for reproducible manufacture of metallic layersSIEMENS AG·Filed 1981·Granted May 25, 1982·25 cites·6 claims
- 1068US4294871AMethod for depositing a layer on the inside of cavities of a work pieceSIEMENS AG·Filed 1979·Granted Oct 13, 1981·19 cites·8 claims
- 1168US4258658ACVD Coating device for small partsSIEMENS AG·Filed 1979·Granted Mar 31, 1981·20 cites·7 claims
- 1264US4592921AMethod for monitoring and regulating the composition and the layer thickness of metallically conductive alloy layers during their manufactureSIEMENS AG·Filed 1985·Granted Jun 3, 1986·13 cites·11 claims
- 1363US4740479AMethod for the manufacture of cross-couplings between n-channel and p-channel CMOS field effect transistors of static write-read memoriesSIEMENS AG·Filed 1986·Granted Apr 26, 1988·28 cites·9 claims
- 1463US4351695AMethod of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layerSIEMENS AG·Filed 1981·Granted Sep 28, 1982·24 cites·12 claims
- 1561US4680612AIntegrated semiconductor circuit including a tantalum silicide diffusion barrierSIEMENS AG·Filed 1986·Granted Jul 14, 1987·28 cites·10 claims
- 1659US5399389AMethod for locally and globally planarizing chemical vapor deposition of SiO2 layers onto structured silicon substratesSIEMENS AG·Filed 1993·Granted Mar 21, 1995·31 cites·15 claims
- 1752US4673968AIntegrated MOS transistors having a gate metallization composed of tantalum or niobium or their silicidesSIEMENS AG·Filed 1986·Granted Jun 16, 1987·18 cites·5 claims
- 1850US4640844AMethod for the manufacture of gate electrodes formed of double layers of metal silicides having a high melting point and doped polycrystalline siliconSIEMENS AG·Filed 1985·Granted Feb 3, 1987·18 cites·10 claims
- 1946US4562089AMethod of measuring electric resistance of thin metallic layers manufactured under the influence of a plasmaSIEMENS AG·Filed 1984·Granted Dec 31, 1985·8 cites·12 claims
- 2044US6057229AMethod for metallizing submicron contact holes in semiconductor bodiesSIEMENS AG·Filed 1997·Granted May 2, 2000·12 cites·14 claims
- 2134US4048954ACoating device for small electrically conductive componentsSIEMENS AG·Filed 1976·Granted Sep 20, 1977·4 cites·14 claims
- 2234US3958071AElectrical resistor and method of producing sameSIEMENS AG·Filed 1973·Granted May 18, 1976·4 cites·8 claims
- 2325US5526122AMethod for determining the mass flow of gases on the basis of optical absorption and employment of said methodSIEMENS AG·Filed 1992·Granted Jun 11, 1996·3 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →