Inventor · disambiguated record
Kohji Kanamori
Also filed as: KANAMORI KOHJI
120 granted patents·35 pending applications·790 citations·filing 1995–2025
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD105NEC ELECTRONICS CORP18NEC CORP16KANAMORI KOHJI6RENESAS ELECTRONICS CORP3
Top patents by PatentIndex Score
155 records- 0197US11289507B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 29, 2022·4 cites·20 claims
- 0297US10748923B2Vertical memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 18, 2020·14 cites·19 claims
- 0397US10068917B2Vertical memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 4, 2018·22 cites·18 claims
- 0496US11792994B2Three-dimensional memory device including a string selection line gate electrode having a silicide layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 17, 2023·4 cites·20 claims
- 0596US10998301B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 4, 2021·13 cites·20 claims
- 0696US10411033B2Semiconductor device including vertical channel layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 10, 2019·15 cites·16 claims
- 0796US10367003B2Vertical non-volatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 30, 2019·20 cites·20 claims
- 0896US6010946ASemiconductor device with isolation insulating film tapered and method of manufacturing the sameNEC CORP·Filed 1997·Granted Jan 4, 2000·245 cites·19 claims
- 0995US10559591B2Vertical memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 11, 2020·15 cites·18 claims
- 1095US9634024B2Semiconductor device having vertical channel and air gap, and method of manufacturing thereofSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 25, 2017·28 cites·20 claims
- 1194US11729976B2Semiconductor devices including upper and lower selectorsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 1294US11594544B2Semiconductor devices with string select channel for improved upper connectionSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 28, 2023·5 cites·17 claims
- 1394US9997534B2Vertical memory devicesSON YONG HOON·Filed 2016·Granted Jun 12, 2018·14 cites·19 claims
- 1493US10134752B2Memory deviceKIM KWANG SOO·Filed 2016·Granted Nov 20, 2018·12 cites·20 claims
- 1592US11158651B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 26, 2021·3 cites·20 claims
- 1692US11088163B2Semiconductor devices including upper and lower selectorsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 10, 2021·6 cites·19 claims
- 1792US10566345B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 18, 2020·14 cites·20 claims
- 1892US9019739B2Three-dimensional semiconductor devices and methods of fabricating the samePARK JINTAEK·Filed 2014·Granted Apr 28, 2015·14 cites·23 claims
- 1992US7116581B2Nonvolatile semiconductor memory device and method of programming in nonvolatile semiconductor memory deviceNEC ELECTRONICS CORP·Filed 2005·Granted Oct 3, 2006·29 cites·19 claims
- 2090US10396092B2Vertical memory device and method of manufacturing the sameKANAMORI KOHJI·Filed 2017·Granted Aug 27, 2019·8 cites·17 claims
- 2189US11069709B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 20, 2021·2 cites·20 claims
- 2289US10896711B2Memory device with memory cell structure including ferroelectric data storage layer, and a first gate and a second gateSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 19, 2021·9 cites·18 claims
- 2388US10522562B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 31, 2019·6 cites·17 claims
- 2488US9183893B2Semiconductor memory deviceKANAMORI KOHJI·Filed 2013·Granted Nov 10, 2015·11 cites·20 claims
- 2587US11374017B2Three-dimensional memory device including a string selection line gate electrode having a silicide layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 28, 2022·2 cites·19 claims
- 2687US7064382B2Nonvolatile memory and nonvolatile memory manufacturing methodNEC CORP·Filed 2005·Granted Jun 20, 2006·16 cites·20 claims
- 2786US10707231B2Semiconductor memory device having vertical supporter penetrating the gate stack structure and through dielectric patternSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 7, 2020·5 cites·20 claims
- 2886US6436769B1Split gate flash memory with virtual ground array structure and method of fabricating the sameNEC CORP·Filed 2001·Granted Aug 20, 2002·34 cites·3 claims
- 2986US2024341099A1Three-dimensional (3d) semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3085US11049847B2Semiconductor device for preventing defects between bit lines and channelsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 29, 2021·2 cites·20 claims
- 3184US12268003B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·7 claims
- 3284US11563028B2Nonvolatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 24, 2023·1 cites·26 claims
- 3384US2025359056A1Memory device with vertically stacked semiconductor structuresSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3483US12022658B2Three-dimensional (3D) semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 3583US11056645B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 6, 2021·2 cites·20 claims
- 3683US9960171B2Semiconductor devices including charge storage patternsKANAMORI KOHJI·Filed 2016·Granted May 1, 2018·4 cites·15 claims
- 3782US12310026B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 3882US10896728B2Method of writing data in nonvolatile memory device, with divided subpages or subblocks, and method of erasing data in nonvolatile memory device with divided subpages or subblocksSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 19, 2021·5 cites·7 claims
- 3981US9224429B2Three-dimensional semiconductor devices and methods of fabricating the samePARK JINTAEK·Filed 2015·Granted Dec 29, 2015·5 cites·18 claims
- 4081US6317360B1Flash memory and methods of writing and erasing the same as well as a method of forming the sameNEC CORP·Filed 1999·Granted Nov 13, 2001·40 cites·7 claims
- 4181US2025212405A1Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 4280US10854630B2Semiconductor device including vertical channel layerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 1, 2020·2 cites·20 claims
- 4379US12507412B2Vertical memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 4479US10763167B2Vertical semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 1, 2020·2 cites·20 claims
- 4579US10714495B2Three-dimensional semiconductor memory devices including through-interconnection structuresSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 14, 2020·3 cites·19 claims
- 4678US12200936B23D semiconductor memory device and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·19 claims
- 4778US12178046B2Semiconductor devices including upper and lower selectorsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 4877US11778834B2Three-dimensional (3D) semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 4977US11778826B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 5077US11538859B2Semiconductor memory device including variable resistance layerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 27, 2022·2 cites·17 claims
Showing the top 50 of 155 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →