Inventor · disambiguated record
Kouji Matsuo
Also filed as: MATSUO KOUJI
70 granted patents·16 pending applications·1,653 citations·filing 1987–2025
99Inventor score
Top patents by PatentIndex Score
86 records- 0199US6737716B1Semiconductor device and method of manufacturing the sameTOKYO SHIBAURA ELECTRIC CO·Filed 2000·Granted May 18, 2004·391 cites·7 claims
- 0298US10211166B2Semiconductor device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2017·Granted Feb 19, 2019·29 cites·19 claims
- 0398US6310367B1MOS transistor having a tensile-strained SI layer and a compressive-strained SI-GE layerTOSHIBA KK·Filed 2000·Granted Oct 30, 2001·213 cites·18 claims
- 0497US6376888B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2000·Granted Apr 23, 2002·175 cites·8 claims
- 0596US7340942B2Sensor including a sensor element having electrode terminals spaced apart from a connecting end thereofNGK SPARK PLUG CO·Filed 2006·Granted Mar 11, 2008·33 cites·5 claims
- 0695US9793293B1Semiconductor device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2017·Granted Oct 17, 2017·13 cites·17 claims
- 0795US7652328B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jan 26, 2010·32 cites·13 claims
- 0894US6465290B1Method of manufacturing a semiconductor device using a polymer film patternTOSHIBA KK·Filed 2001·Granted Oct 15, 2002·88 cites·19 claims
- 0993US6346438B1Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1998·Granted Feb 12, 2002·91 cites·32 claims
- 1092US10319730B2Memory device having a plurality of first conductive pillars penetrating through a stacked filmTOSHIBA MEMORY CORP·Filed 2018·Granted Jun 11, 2019·8 cites·10 claims
- 1192US8633535B2Nonvolatile semiconductor memoryMATSUO KOUJI·Filed 2011·Granted Jan 21, 2014·16 cites·20 claims
- 1292US6977415B2Semiconductor device including a gate insulating film on a recess and source and drain extension regionsTOSHIBA KK·Filed 2003·Granted Dec 20, 2005·54 cites·7 claims
- 1390US7745073B2Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the sameTOSHIBA KK·Filed 2008·Granted Jun 29, 2010·10 cites·7 claims
- 1488US7602013B2Semiconductor device with recessed channelTOSHIBA KK·Filed 2007·Granted Oct 13, 2009·12 cites·4 claims
- 1588US7459246B2Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the sameTOSHIBA KK·Filed 2007·Granted Dec 2, 2008·9 cites·8 claims
- 1688US6887747B2Method of forming a MISFET having a schottky junctioned silicideTOSHIBA KK·Filed 2002·Granted May 3, 2005·39 cites·7 claims
- 1787US8138552B2Semiconductor device and method of manufacturing the sameMATSUO KOUJI·Filed 2008·Granted Mar 20, 2012·14 cites·9 claims
- 1886US7642162B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jan 5, 2010·10 cites·11 claims
- 1986US7579231B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Aug 25, 2009·29 cites·12 claims
- 2086US7179569B2Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the sameTOSHIBA KK·Filed 2004·Granted Feb 20, 2007·24 cites·14 claims
- 2186US6815279B2Manufacturing method of CMOS devicesTOKYO SHIBAURA ELECTRIC CO·Filed 2001·Granted Nov 9, 2004·31 cites·5 claims
- 2286US6770402B2Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the sameTOSHIBA KK·Filed 2001·Granted Aug 3, 2004·24 cites·1 claims
- 2386US6737309B2Complementary MISFETTOSHIBA KK·Filed 2001·Granted May 18, 2004·36 cites·5 claims
- 2485US8668385B2Temperature sensorMATSUO KOUJI·Filed 2011·Granted Mar 11, 2014·8 cites·11 claims
- 2584US7781848B2Semiconductor device with extension structure and method for fabricating the sameTOSHIBA KK·Filed 2007·Granted Aug 24, 2010·8 cites·7 claims
- 2682US11217745B2Magnetoresistive memory device and method for manufacturing magnetoresistive memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Jan 4, 2022·2 cites·16 claims
- 2780US8156790B2Sensor and method of producing sensorMATSUO KOUJI·Filed 2008·Granted Apr 17, 2012·5 cites·10 claims
- 2880US7461538B2Sensor and method of producing sensorNGK SPARK PLUG CO·Filed 2004·Granted Dec 9, 2008·15 cites·7 claims
- 2980US7179702B2Semiconductor device including metal insulator semiconductor field effect transistor and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Feb 20, 2007·7 cites·8 claims
- 3080US6833596B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Dec 21, 2004·26 cites·19 claims
- 3179US9153779B2Resistance change memory element and resistance change memoryTOSHIBA KK·Filed 2013·Granted Oct 6, 2015·6 cites·16 claims
- 3278US8215153B2Gas sensor and gas sensor unitMATSUBARA YOSHIAKI·Filed 2009·Granted Jul 10, 2012·7 cites·16 claims
- 3378US6964893B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2004·Granted Nov 15, 2005·20 cites·5 claims
- 3477US7902603B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Mar 8, 2011·5 cites·7 claims
- 3576US6500322B2Gas sensorNGK SPARK PLUG CO·Filed 2000·Granted Dec 31, 2002·13 cites·25 claims
- 3675US7767535B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Aug 3, 2010·5 cites·8 claims
- 3775US6510728B2Gas sensor including inorganic powder filling gap between measuring element and metallic shellNGK SPARK PLUG CO·Filed 2001·Granted Jan 28, 2003·12 cites·13 claims
- 3873US11011700B2Resistance-change type memory deviceTOSHIBA MEMORY CORP·Filed 2020·Granted May 18, 2021·1 cites·6 claims
- 3973US10629810B2Resistance-change type memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Apr 21, 2020·3 cites·15 claims
- 4073US7981795B2Semiconductor device manufacturing methodTOSHIBA KK·Filed 2009·Granted Jul 19, 2011·4 cites·20 claims
- 4173US7902030B2Manufacturing method for semiconductor device and semiconductor deviceTOSHIBA KK·Filed 2009·Granted Mar 8, 2011·3 cites·9 claims
- 4273US6967379B2Semiconductor device including metal insulator semiconductor field effect transistorTOSHIBA KK·Filed 2003·Granted Nov 22, 2005·15 cites·11 claims
- 4372US7935235B2Gas sensor with sealing structureNGK SPARK PLUG CO·Filed 2008·Granted May 3, 2011·2 cites·1 claims
- 4472US6992357B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Jan 31, 2006·14 cites·3 claims
- 4569US7172955B2Silicon composition in CMOS gatesTOSHIBA KK·Filed 2005·Granted Feb 6, 2007·3 cites·7 claims
- 4669US2025201708A1Semiconductor memory deviceKIOXIA CORP·Filed 2025·Application pending·0 cites
- 4768US10083979B2Semiconductor device, manufacturing method and controlling method of semiconductor deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Sep 25, 2018·1 cites·8 claims
- 4868US2025095737A1Memory deviceKIOXIA CORP·Filed 2024·Application pending·0 cites
- 4967US7939891B2Semiconductor device having MISFETs and manufacturing method thereofTOSHIBA KK·Filed 2009·Granted May 10, 2011·4 cites·8 claims
- 5067US7674143B2Sensor and method of producing sensorNGK SPARK PLUG CO·Filed 2004·Granted Mar 9, 2010·6 cites·13 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →