Inventor · disambiguated record
Kouhei Morizuka
Also filed as: MORIZUKA KOUHEI
20 granted patents·449 citations·filing 1985–2005
96Inventor score
Files withTOSHIBA KK20
Top patents by PatentIndex Score
20 records- 0190US7329909B2Nitride semiconductor deviceTOSHIBA KK·Filed 2005·Granted Feb 12, 2008·16 cites·20 claims
- 0288US6448859B2High frequency power amplifier having a bipolar transistorTOSHIBA KK·Filed 2001·Granted Sep 10, 2002·42 cites·18 claims
- 0385US7038250B2Semiconductor device suited for a high frequency amplifierTOSHIBA KK·Filed 2004·Granted May 2, 2006·37 cites·10 claims
- 0484US5898909AUltra high frequency radio communication apparatusTOSHIBA KK·Filed 1996·Granted Apr 27, 1999·86 cites·22 claims
- 0583US6344775B1Semiconductor deviceTOSHIBA KK·Filed 2000·Granted Feb 5, 2002·34 cites·14 claims
- 0673US5124270ABipolar transistor having external base regionTOSHIBA KK·Filed 1990·Granted Jun 23, 1992·35 cites·3 claims
- 0769US5510647ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1994·Granted Apr 23, 1996·26 cites·6 claims
- 0868US6790694B2High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the sameTOSHIBA KK·Filed 2002·Granted Sep 14, 2004·12 cites·6 claims
- 0966US5331186AHeterojunction bipolar transistor with base electrode having Schottky barrier contact to the emitterTOSHIBA KK·Filed 1992·Granted Jul 19, 1994·26 cites·9 claims
- 1066US4933732AHeterojunction bipolar transistorTOSHIBA KK·Filed 1988·Granted Jun 12, 1990·24 cites·6 claims
- 1165US6127716AHeterojunction bipolar transistor and manufacturing method thereofTOSHIBA KK·Filed 1999·Granted Oct 3, 2000·23 cites·22 claims
- 1264US4679305AMethod of manufacturing a heterojunction bipolar transistor having self-aligned emitter and base and selective isolation regionsTOSHIBA KK·Filed 1985·Granted Jul 14, 1987·30 cites·11 claims
- 1355US6051484ASemiconductor device and method of manufacturing thereofTOSHIBA KK·Filed 1997·Granted Apr 18, 2000·15 cites·19 claims
- 1452US5930133ARectifying device for achieving a high power efficiencyTOSHIBA KK·Filed 1998·Granted Jul 27, 1999·13 cites·8 claims
- 1547US6940157B2High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the sameTOSHIBA KK·Filed 2004·Granted Sep 6, 2005·2 cites·11 claims
- 1641US5898200AMicrowave integrated circuitTOSHIBA KK·Filed 1997·Granted Apr 27, 1999·9 cites·20 claims
- 1739US5637909ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1996·Granted Jun 10, 1997·5 cites·5 claims
- 1838US5153692ASemiconductor deviceTOSHIBA KK·Filed 1991·Granted Oct 6, 1992·6 cites·9 claims
- 1934US5266818ACompound semiconductor device having an emitter contact structure including an Inx Ga1 -x As graded-composition layerTOSHIBA KK·Filed 1992·Granted Nov 30, 1993·5 cites·8 claims
- 2031US5053846ASemiconductor bipolar device with phosphorus dopingTOSHIBA KK·Filed 1990·Granted Oct 1, 1991·3 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →