Inventor · disambiguated record
Kohei Oasa
Also filed as: OASA KOHEI
18 granted patents·9 pending applications·21 citations·filing 2014–2025
89Inventor score
Files withTOSHIBA KK27
Top patents by PatentIndex Score
27 records- 0191US12183782B2Semiconductor deviceTOSHIBA KK·Filed 2022·Granted Dec 31, 2024·2 cites·17 claims
- 0290US9917182B1Semiconductor deviceTOSHIBA KK·Filed 2017·Granted Mar 13, 2018·7 cites·10 claims
- 0388US10651276B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted May 12, 2020·6 cites·17 claims
- 0479US12255254B2Semiconductor deviceTOSHIBA KK·Filed 2023·Granted Mar 18, 2025·0 cites·24 claims
- 0575US10707312B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted Jul 7, 2020·2 cites·11 claims
- 0674US9627489B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Apr 18, 2017·2 cites·20 claims
- 0774US2025098211A1Method for manufacturing semiconductor device and semiconductor deviceTOSHIBA KK·Filed 2024·Application pending·0 cites
- 0871US11810975B2Semiconductor deviceTOSHIBA KK·Filed 2022·Granted Nov 7, 2023·0 cites·24 claims
- 0968US10763352B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted Sep 1, 2020·1 cites·14 claims
- 1062US9337300B2Nitride-based semiconductor deviceTOSHIBA KK·Filed 2014·Granted May 10, 2016·1 cites·9 claims
- 1162US2025280587A1Semiconductor deviceTOSHIBA KK·Filed 2025·Application pending·0 cites
- 1261US2022085208A1Method for manufacturing semiconductor device and semiconductor deviceTOSHIBA KK·Filed 2021·Application pending·0 cites
- 1360US11276775B2Semiconductor deviceTOSHIBA KK·Filed 2019·Granted Mar 15, 2022·0 cites·10 claims
- 1455US11869970B2Semiconductor device including energy level in drift layerTOSHIBA KK·Filed 2021·Granted Jan 9, 2024·0 cites·6 claims
- 1554US12283615B2Semiconductor device with multiple electrodes and an insulation filmTOSHIBA KK·Filed 2022·Granted Apr 22, 2025·0 cites·7 claims
- 1653US2024097022A1Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2023·Application pending·0 cites
- 1746US12183820B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Dec 31, 2024·0 cites·6 claims
- 1846US10998437B2Semiconductor deviceTOSHIBA KK·Filed 2019·Granted May 4, 2021·0 cites·18 claims
- 1946US10593793B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted Mar 17, 2020·0 cites·13 claims
- 2043US10971621B2Semiconductor deviceTOSHIBA KK·Filed 2019·Granted Apr 6, 2021·0 cites·14 claims
- 2141US10074739B2Semiconductor device having electric field near drain electrode alleviatedTOSHIBA KK·Filed 2016·Granted Sep 11, 2018·0 cites·12 claims
- 2240US9627504B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Apr 18, 2017·0 cites·10 claims
- 2340US2019081173A1Semiconductor deviceTOSHIBA KK·Filed 2018·Application pending·0 cites
- 2433US2016211357A1Semiconductor deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 2533US2016268408A1Semiconductor deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 2633US2016218189A1Semiconductor deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 2733US2016218067A1Semiconductor device and method of manufacturing the semiconductor deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →