Inventor · disambiguated record
Konrad Reuschel
Also filed as: REUSCHEL KONRAD
14 granted patents·393 citations·filing 1973–1978
94Inventor score
Files withSIEMENS AG14
Top patents by PatentIndex Score
14 records- 0197US4068020AMethod of depositing elemental amorphous siliconSIEMENS AG·Filed 1975·Granted Jan 10, 1978·148 cites·5 claims
- 0290US4125643AProcess for depositing elemental silicon semiconductor material from a gas phaseSIEMENS AG·Filed 1977·Granted Nov 14, 1978·41 cites·3 claims
- 0386US4148931AProcess for depositing elemental silicon semiconductor material from a gas phaseSIEMENS AG·Filed 1978·Granted Apr 10, 1979·32 cites·4 claims
- 0479US4108714AProcess for producing plate-shaped silicon bodies for solar cellsSIEMENS AG·Filed 1976·Granted Aug 22, 1978·42 cites·6 claims
- 0577US4097584AMethod of producing silicon useful for semiconductor component manufactureSIEMENS AG·Filed 1977·Granted Jun 27, 1978·35 cites·4 claims
- 0666US4027051AMethod of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiationSIEMENS AG·Filed 1974·Granted May 31, 1977·16 cites·1 claims
- 0762US4023520AReaction container for deposition of elemental siliconSIEMENS AG·Filed 1976·Granted May 17, 1977·16 cites·7 claims
- 0861US4020791AApparatus for indiffusing dopants into semiconductor materialSIEMENS AG·Filed 1974·Granted May 3, 1977·18 cites·4 claims
- 0961US3979490AMethod for the manufacture of tubular bodies of semiconductor materialSIEMENS AG·Filed 1973·Granted Sep 7, 1976·9 cites·9 claims
- 1056US4042454AMethod of producing homogeneously doped n-type Si monocrystals by thermal neutron radiationSIEMENS AG·Filed 1974·Granted Aug 16, 1977·10 cites·1 claims
- 1156US3950479AMethod of producing hollow semiconductor bodiesSIEMENS AG·Filed 1973·Granted Apr 13, 1976·7 cites·7 claims
- 1246US4126509AProcess for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystalSIEMENS AG·Filed 1976·Granted Nov 21, 1978·6 cites·2 claims
- 1340US4025365AMethod of producing homogeneously doped p-conductive semiconductor materialsSIEMENS AG·Filed 1975·Granted May 24, 1977·8 cites·8 claims
- 1438US4012217ABending silicon rods into U-shapesSIEMENS AG·Filed 1975·Granted Mar 15, 1977·5 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →