Inventor · disambiguated record
Ko Soeno
Also filed as: FUKUSHIMA HIROSHI · MISUMI A · SOENO KO
13 granted patents·165 citations·filing 1974–1983
92Inventor score
Files withHITACHI LTD13
Top patents by PatentIndex Score
13 records- 0185US4129801ACathode for cathode ray tube of directly heating type and process for producing the same cathodeHITACHI LTD·Filed 1977·Granted Dec 12, 1978·22 cites·29 claims
- 0272US4310777ADirectly heated cathode for electron tubeHITACHI LTD·Filed 1980·Granted Jan 12, 1982·14 cites·7 claims
- 0372US3951577AApparatus for production of metal powder according water atomizing methodHITACHI LTD·Filed 1974·Granted Apr 20, 1976·24 cites·26 claims
- 0470US4319397AMethod of producing semiconductor displacement transducerHITACHI LTD·Filed 1980·Granted Mar 16, 1982·22 cites·17 claims
- 0565US4220891ADirectly heated cathode for electron tubeHITACHI LTD·Filed 1979·Granted Sep 2, 1980·10 cites·6 claims
- 0661US4349766ADirectly heated cathode for electron tubeHITACHI LTD·Filed 1980·Granted Sep 14, 1982·9 cites·12 claims
- 0756US4166384ASemiconductor transducerHITACHI LTD·Filed 1978·Granted Sep 4, 1979·11 cites·4 claims
- 0855US4499774ASemiconductor pressure transducerHITACHI LTD·Filed 1981·Granted Feb 19, 1985·15 cites·8 claims
- 0946US4236925AMethod of producing sintered material having high damping capacity and wearing resistance and resultant productsHITACHI LTD·Filed 1978·Granted Dec 2, 1980·10 cites·7 claims
- 1045US4486245AMethod of producing nickel base alloy structure with NiAl coatingHITACHI LTD·Filed 1981·Granted Dec 4, 1984·9 cites·7 claims
- 1142US4500904ASemiconductor deviceHITACHI LTD·Filed 1983·Granted Feb 19, 1985·11 cites·15 claims
- 1242US4114243AProcess for producing cathode for cathode ray tube of directly heating typeHITACHI LTD·Filed 1977·Granted Sep 19, 1978·4 cites·24 claims
- 1332US4246693AMethod of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminumHITACHI LTD·Filed 1979·Granted Jan 27, 1981·4 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →