Inventor · disambiguated record
Kouhei Sugihara
Also filed as: SUGIHARA KOUHEI
14 granted patents·3 pending applications·187 citations·filing 2003–2024
94Inventor score
Technology areasH10P
Top patents by PatentIndex Score
17 records- 0196US7470618B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Dec 30, 2008·29 cites·12 claims
- 0296US7183204B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Feb 27, 2007·24 cites·12 claims
- 0395US6906393B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted Jun 14, 2005·56 cites·6 claims
- 0494US7960281B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Jun 14, 2011·15 cites·10 claims
- 0593US8372747B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2011·Granted Feb 12, 2013·8 cites·17 claims
- 0693US2025098281A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0792US8809186B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 19, 2014·6 cites·5 claims
- 0892US8586475B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Nov 19, 2013·7 cites·10 claims
- 0991US9209191B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Dec 8, 2015·5 cites·6 claims
- 1090US9614081B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Apr 4, 2017·3 cites·7 claims
- 1190US9412867B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Aug 9, 2016·3 cites·6 claims
- 1280US6872642B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Mar 29, 2005·23 cites·14 claims
- 1379US12198987B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2021·Granted Jan 14, 2025·0 cites·12 claims
- 1475US2020227557A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2020·Application pending·0 cites
- 1566US2018069119A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 1665US9847417B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Dec 19, 2017·0 cites·4 claims
- 1763US6835610B2Method of manufacturing semiconductor device having gate electrode with expanded upper portionRENESAS TECH CORP·Filed 2003·Granted Dec 28, 2004·8 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →