Inventor · disambiguated record
Kong-Beng Thei
Also filed as: THEI KONG-BENG
223 granted patents·29 pending applications·2,028 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD117TAIWAN SEMICONDUCTOR MFG82CHUANG HARRY13THEI KONG-BENG9CHUNG SHENG-CHEN4
Top patents by PatentIndex Score
252 records- 0199US11063038B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·7 cites·20 claims
- 0298US11410995B1Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·6 cites·20 claims
- 0398US10050033B1High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·18 cites·20 claims
- 0498US8105891B2Method for tuning a work function of high-K metal gate devicesYEH CHIUNG-HAN·Filed 2010·Granted Jan 31, 2012·124 cites·20 claims
- 0597US11677022B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·4 cites·20 claims
- 0697US7919792B2Standard cell architecture and methods with variable design rulesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Apr 5, 2011·70 cites·15 claims
- 0797US6329234B1Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flowTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Dec 11, 2001·212 cites·34 claims
- 0896US12021140B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0996US8173491B2Standard cell architecture and methods with variable design rulesLAW OSCAR M K·Filed 2011·Granted May 8, 2012·34 cites·20 claims
- 1096US7923321B2Method for gap filling in a gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Apr 12, 2011·64 cites·20 claims
- 1196US7157351B2Ozone vapor clean methodTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jan 2, 2007·148 cites·18 claims
- 1295US12050245B2Semiconductor testing device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·2 cites·20 claims
- 1395US11823959B2FUSI gated device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·2 cites·20 claims
- 1495US10340357B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 2, 2019·9 cites·20 claims
- 1595US8093120B2Integrating a first contact structure in a gate last processYEH CHIUNG-HAN·Filed 2010·Granted Jan 10, 2012·21 cites·20 claims
- 1695US8039381B2Photoresist etch back method for gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Oct 18, 2011·33 cites·14 claims
- 1795US8035165B2Integrating a first contact structure in a gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Oct 11, 2011·25 cites·20 claims
- 1894US12191365B2Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·1 cites·20 claims
- 1994US10629592B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·7 cites·20 claims
- 2094US9691895B2Lateral MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·9 cites·14 claims
- 2194US7977181B2Method for gate height control in a gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jul 12, 2011·35 cites·20 claims
- 2294US7898037B2Contact scheme for MOSFETsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 1, 2011·33 cites·13 claims
- 2394US6214698B1Shallow trench isolation methods employing gap filling doped silicon oxide dielectric layerTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 10, 2001·108 cites·37 claims
- 2493US12500193B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·1 cites·20 claims
- 2592US11705449B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 18, 2023·1 cites·20 claims
- 2692US10964692B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·5 cites·20 claims
- 2792US8890260B2Polysilicon design for replacement gate technologyCHUANG HARRY HAK-LAY·Filed 2009·Granted Nov 18, 2014·14 cites·21 claims
- 2892US8389348B2Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronicsTHEI KONG-BENG·Filed 2010·Granted Mar 5, 2013·13 cites·19 claims
- 2992US7955964B2Dishing-free gap-filling with multiple CMPsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jun 7, 2011·21 cites·20 claims
- 3092US7701034B2Dummy patterns in integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 20, 2010·23 cites·14 claims
- 3192US6472721B2Dual damascene interconnect structures that include radio frequency capacitors and inductorsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 29, 2002·60 cites·13 claims
- 3291US11476214B2Sidewall spacer to reduce bond pad necking and/or redistribution layer neckingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·2 cites·20 claims
- 3391US8202776B2Method for protecting a gate structure during contact formationCHANG HONG-DYI·Filed 2009·Granted Jun 19, 2012·20 cites·20 claims
- 3491US7750416B2Modifying work function in PMOS devices by counter-dopingTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jul 6, 2010·19 cites·4 claims
- 3590US12211926B2Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·1 cites·20 claims
- 3690US10516029B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·4 cites·20 claims
- 3790US9887302B2Schottky barrier diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 6, 2018·6 cites·20 claims
- 3890US8735235B2Integrated circuit metal gate structure and method of fabricationCHUANG HARRY·Filed 2008·Granted May 27, 2014·15 cites·15 claims
- 3990US6265271B1Integration of the borderless contact salicide processTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 24, 2001·58 cites·20 claims
- 4089US8334572B2Resistive device for high-k metal gate technologyCHUNG SHENG-CHEN·Filed 2011·Granted Dec 18, 2012·9 cites·19 claims
- 4189US8174091B2Fuse structureTHEI KONG-BENG·Filed 2009·Granted May 8, 2012·13 cites·20 claims
- 4289US8093116B2Method for N/P patterning in a gate last processCHUNG SHENG-CHEN·Filed 2009·Granted Jan 10, 2012·17 cites·20 claims
- 4389US7981801B2Chemical mechanical polishing (CMP) method for gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jul 19, 2011·13 cites·20 claims
- 4489US2025311354A1Polysilicon Design for Replacement Gate TechnologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4588US8125051B2Device layout for gate last processCHUANG HARRY·Filed 2009·Granted Feb 28, 2012·16 cites·20 claims
- 4688US8058119B2Device scheme of HKMG gate-last processCHUNG SHENG-CHEN·Filed 2009·Granted Nov 15, 2011·13 cites·16 claims
- 4788US7985690B2Method for a gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jul 26, 2011·16 cites·21 claims
- 4888US7404167B2Method for improving design windowTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 22, 2008·12 cites·11 claims
- 4988US6335249B1Salicide field effect transistors with improved borderless contact structures and a method of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jan 1, 2002·44 cites·20 claims
- 5088US2025120153A1Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 252 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →