Inventor · disambiguated record
Kousaku Yano
Also filed as: YANO KOUSAKU
29 granted patents·1,054 citations·filing 1980–2011
97Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD24PANASONIC CORP2DOMAE SHINICHI1MATSUSHITA ELECTRIC IND CO LD1MATSUSHITA ELECTRONICS CORP1
Top patents by PatentIndex Score
29 records- 0196US5753536ASemiconductor device and associated fabrication methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted May 19, 1998·310 cites·23 claims
- 0292US5760429AMulti-layer wiring structure having varying-sized cutoutsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jun 2, 1998·132 cites·15 claims
- 0388US4988423AMethod for fabricating interconnection structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Jan 29, 1991·90 cites·8 claims
- 0486US5501739AApparatus and method for forming thin filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Mar 26, 1996·46 cites·9 claims
- 0581US5863338AApparatus and method for forming thin filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Jan 26, 1999·36 cites·20 claims
- 0680US5576247AThin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moistureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Nov 19, 1996·71 cites·3 claims
- 0774US7443031B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Oct 28, 2008·2 cites·32 claims
- 0873US6022804ASemiconductor device and its manufacturing methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Feb 8, 2000·39 cites·9 claims
- 0969US7911060B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationPANASONIC CORP·Filed 2009·Granted Mar 22, 2011·1 cites·10 claims
- 1069US5733812ASemiconductor device with a field-effect transistor having a lower resistance impurity diffusion layer, and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Mar 31, 1998·26 cites·11 claims
- 1168US5385867AMethod for forming a multi-layer metallic wiring structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Jan 31, 1995·40 cites·7 claims
- 1267US6197685B1Method of producing multilayer wiring device with offset axises of upper and lower plugsMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Mar 6, 2001·19 cites·1 claims
- 1367US5834369AMethod of preventing diffusion between interconnect and plugMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Nov 10, 1998·35 cites·18 claims
- 1466US5621247AMemory device with tungsten and aluminum interconnectsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Apr 15, 1997·33 cites·15 claims
- 1565US7148572B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Dec 12, 2006·5 cites·6 claims
- 1664US5633211ASemiconductor device and processMATSUSHITA ELECTRIC IND CO LD·Filed 1994·Granted May 27, 1997·37 cites·14 claims
- 1760US7642654B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor to be used for reliability evaluationPANASONIC CORP·Filed 2008·Granted Jan 5, 2010·0 cites·34 claims
- 1860US5723909ASemiconductor device and associated fabrication methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Mar 3, 1998·22 cites·4 claims
- 1960US4355866AStripe-color filterMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1980·Granted Oct 26, 1982·9 cites·6 claims
- 2059US5312776AMethod of preventing the corrosion of metallic wiringsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted May 17, 1994·28 cites·9 claims
- 2158US6580176B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 17, 2003·3 cites·4 claims
- 2258US5545919ASemiconductor device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Aug 13, 1996·24 cites·3 claims
- 2349US8110495B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationDOMAE SHINICHI·Filed 2011·Granted Feb 7, 2012·0 cites·5 claims
- 2448US5714400AMethod for forming a memory device by utilizing variations in resistance valueMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Feb 3, 1998·15 cites·6 claims
- 2547US5986313ASemiconductor device comprising MISFETS and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Nov 16, 1999·9 cites·4 claims
- 2644US6815338B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 9, 2004·0 cites·1 claims
- 2742US5569628ASemiconductor device fabrication methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Oct 29, 1996·10 cites·13 claims
- 2839US6372928B1Layer forming material and wiring forming methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Apr 16, 2002·7 cites·1 claims
- 2936US5773639ALayer forming material and wiring forming methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Jun 30, 1998·5 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →