Inventor · disambiguated record
Koichiro Yuki
Also filed as: YUKI KOICHIRO
33 granted patents·1 pending application·1,008 citations·filing 1993–2006
98Inventor score
Top patents by PatentIndex Score
34 records- 0195US5739544AQuantization functional device utilizing a resonance tunneling effect and method for producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Apr 14, 1998·139 cites·18 claims
- 0293US6674150B2Heterojunction bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jan 6, 2004·58 cites·28 claims
- 0392US6597016B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jul 22, 2003·53 cites·11 claims
- 0492US6492711B1Heterojunction bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Dec 10, 2002·59 cites·22 claims
- 0592US5543351AMethod of producing electrically insulated silicon structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Aug 6, 1996·86 cites·16 claims
- 0691US6399993B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 4, 2002·67 cites·10 claims
- 0790US6455364B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 24, 2002·55 cites·12 claims
- 0890US6015978AResonance tunnel deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Jan 18, 2000·92 cites·2 claims
- 0989US6091077AMIS SOI semiconductor device with RTD and/or HETMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 18, 2000·87 cites·13 claims
- 1083US6759697B2Heterojunction bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jul 6, 2004·24 cites·13 claims
- 1182US6303516B1Method for forming dot elementMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Oct 16, 2001·55 cites·10 claims
- 1279US6342716B1Semiconductor device having dot elements as floating gateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Jan 29, 2002·47 cites·11 claims
- 1378US7465969B2Bipolar transistor and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Dec 16, 2008·7 cites·8 claims
- 1468US6756278B2Lateral heterojunction bipolar transistor and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jun 29, 2004·12 cites·12 claims
- 1568US5972744AQuantum effect device, method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Oct 26, 1999·28 cites·6 claims
- 1668US5486706AQuantization functional device utilizing a resonance tunneling effect and method for producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Jan 23, 1996·21 cites·11 claims
- 1766US7091099B2Bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 15, 2006·11 cites·8 claims
- 1863US6563146B1Lateral heterojunction bipolar transistor and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted May 13, 2003·9 cites·3 claims
- 1960US5405454AElectrically insulated silicon structure and producing method thereforMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Apr 11, 1995·17 cites·15 claims
- 2056US6171905B1Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Jan 9, 2001·18 cites·27 claims
- 2153US6847062B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 25, 2005·5 cites·16 claims
- 2251US5444267AQuantum device utilizing the quantum effectMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Aug 22, 1995·11 cites·8 claims
- 2350US7135721B2Heterojunction bipolar transistor having reduced driving voltage requirementsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Nov 14, 2006·3 cites·13 claims
- 2448US6847063B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 25, 2005·3 cites·12 claims
- 2548US6821870B2Heterojunction bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Nov 23, 2004·2 cites·8 claims
- 2646US5480492AMethod for removing organic or inorganic contaminant from silicon substrate surfaceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Jan 2, 1996·15 cites·21 claims
- 2745US6713790B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Mar 30, 2004·2 cites·2 claims
- 2843US7049198B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted May 23, 2006·0 cites·3 claims
- 2941US5562802AMethod of producing a quantum device which utilizes the quantum effectMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Oct 8, 1996·6 cites·15 claims
- 3039US5514614AMethod for producing quantization functional device utilizing a resonance tunneling effectMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted May 7, 1996·10 cites·50 claims
- 3138US2002163013A1Heterojunction bipolar transistorFiled 2001·Application pending·0 cites
- 3236US5888852AMethod for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by this methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Mar 30, 1999·4 cites·17 claims
- 3333US6103583AMethod for producing quantization functional deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Aug 15, 2000·1 cites·21 claims
- 3432US5945687AQuantization functional device, quantization functional apparatus utilizing the same, and method for producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Aug 31, 1999·1 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →