Inventor · disambiguated record
Krishna Kumar Bhuwalka
Also filed as: BHUWALKA KRISHNA · BHUWALKA KRISHNA KUMAR
41 granted patents·7 pending applications·262 citations·filing 2007–2024
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD13TAIWAN SEMICONDUCTOR MFG10TAIWAN SEMICONDUCTOR MFG CO LTD10BHUWALKA KRISHNA KUMAR5HUAWEI TECH CO LTD4
Top patents by PatentIndex Score
48 records- 0197US7834345B2Tunnel field-effect transistors with superlattice channelsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 16, 2010·57 cites·20 claims
- 0296US7812370B2Tunnel field-effect transistor with narrow band-gap channel and strong gate couplingTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Oct 12, 2010·49 cites·15 claims
- 0395US10217816B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 26, 2019·15 cites·16 claims
- 0495US8471329B2Tunnel FET and methods for forming the sameBHUWALKA KRISHNA KUMAR·Filed 2011·Granted Jun 25, 2013·25 cites·20 claims
- 0594US8604518B2Split-channel transistor and methods for forming the sameBHUWALKA KRISHNA KUMAR·Filed 2011·Granted Dec 10, 2013·18 cites·14 claims
- 0693US9634092B2Semiconductor devices having tapered active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 25, 2017·12 cites·19 claims
- 0792US9337109B2Multi-threshold voltage FETsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 10, 2016·14 cites·20 claims
- 0890US9412871B2FinFET with channel backside passivation layer device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·11 cites·15 claims
- 0990US8587075B2Tunnel field-effect transistor with metal sourceBHUWALKA KRISHNA KUMAR·Filed 2008·Granted Nov 19, 2013·18 cites·19 claims
- 1088US8354695B2Tunnel field-effect transistor with narrow band-gap channel and strong gate couplingTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 15, 2013·8 cites·19 claims
- 1186US11705521B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 18, 2023·1 cites·19 claims
- 1285US11515391B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 29, 2022·1 cites·20 claims
- 1383US8697510B2Tunnel field-effect transistor with narrow band-gap channel and strong gate couplingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 15, 2014·5 cites·20 claims
- 1482US10418448B2Semiconductor devices including field effect transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 17, 2019·2 cites·14 claims
- 1582US8916927B2Vertical tunnel field effect transistor (FET)BHUWALKA KRISHNA·Filed 2012·Granted Dec 23, 2014·4 cites·20 claims
- 1682US8669163B2Tunnel field-effect transistors with superlattice channelsBHUWALKA KRISHNA KUMAR·Filed 2010·Granted Mar 11, 2014·5 cites·19 claims
- 1781US9647097B2Vertical tunnel field effect transistor (FET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 9, 2017·2 cites·21 claims
- 1880US11133311B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 28, 2021·2 cites·20 claims
- 1979US12471366B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·28 claims
- 2078US11217695B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 4, 2022·1 cites·19 claims
- 2177US8614468B2Mask-less and implant free formation of complementary tunnel field effect transistorsVAN DAL MARK·Filed 2011·Granted Dec 24, 2013·5 cites·20 claims
- 2270US10164024B2Heterostructures for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·1 cites·20 claims
- 2369US11876097B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 16, 2024·0 cites·20 claims
- 2469US9679975B2Semiconductor devices including field effect transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 13, 2017·1 cites·10 claims
- 2566US10872972B2Vertical tunnel field effect transistor (FET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·0 cites·23 claims
- 2666US9385198B2Heterostructures for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 5, 2016·1 cites·27 claims
- 2766US8723223B2Hybrid Fin field-effect transistorsBHUWALKA KRISHNA KUMAR·Filed 2012·Granted May 13, 2014·2 cites·20 claims
- 2865US9735239B2Semiconductor device channel system and methodDOORNBOS GERBEN·Filed 2012·Granted Aug 15, 2017·1 cites·20 claims
- 2964US10868125B2Semiconductor devices including field effect transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·16 claims
- 3064US10475907B2Vertical tunnel field effect transistor (FET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·0 cites·20 claims
- 3164US8802531B2Split-channel transistor and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·1 cites·18 claims
- 3264US2025133763A1Multi-Gate Hybrid-Channel Field Effect TransistorHUAWEI TECH CO LTD·Filed 2024·Application pending·0 cites
- 3363US2025063806A1Method for producing fet structureHUAWEI TECH CO LTD·Filed 2024·Application pending·0 cites
- 3463US2025120112A1Semiconductor structure for gate all around nanosheet deviceHUAWEI TECH CO LTD·Filed 2024·Application pending·0 cites
- 3560US10840332B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 3659US2024250140A1Semiconductor architecture and method of manufacturing semiconductor architectureHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
- 3756US9231102B2Asymmetric semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·0 cites·20 claims
- 3855US10050111B2Semiconductor device channel system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·0 cites·19 claims
- 3955US10014395B2Fin tunnel field effect transistor (FET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 3, 2018·0 cites·20 claims
- 4053US9614049B2Fin tunnel field effect transistor (FET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 4, 2017·0 cites·7 claims
- 4153US9093273B2Multiple-threshold voltage devices and method of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·0 cites·20 claims
- 4250US9368353B2Multiple-threshold voltage devices and method of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·0 cites·20 claims
- 4349US9887272B2Method for forming counterdoped semiconductor device comprising first epitaxial layer and second epitaxial layer formed over first epitaxial layer having conductivity type different than second epitaxial layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 6, 2018·0 cites·17 claims
- 4448US2024371874A1Nanostructure Comprising Nanosheet or Nanowire TransistorsIMEC VZW·Filed 2021·Application pending·0 cites
- 4543US9711632B2Intra-band tunnel FETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 18, 2017·0 cites·21 claims
- 4643US2025048690A1A complementary field-effect transistor deviceIMEC VZW·Filed 2021·Application pending·0 cites
- 4732US9419114B2Tunnel field-effect transistorIMEC VZW·Filed 2015·Granted Aug 16, 2016·0 cites·18 claims
- 4832US2016086841A1Method for forming pattern of semiconductor device and semiconductor device formed using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →