Inventor · disambiguated record
Kuan-Lun Chang
Also filed as: CHANG KUAN-LUN
11 granted patents·1 pending application·183 citations·filing 1997–2013
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG6IND TECH RES INST4BIG SUN ENERGY TECHNOLOGY INC1CHANG CHI-HSIUNG1
Top patents by PatentIndex Score
12 records- 0182US5814547AForming different depth trenches simultaneously by microloading effectIND TECH RES INST·Filed 1997·Granted Sep 29, 1998·76 cites·20 claims
- 0278US7317221B2High density MIM capacitor structure and fabrication processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 8, 2008·29 cites·19 claims
- 0373US6303419B1Method for fabricating a BiCMOS device featuring twin wells and an N type epitaxial layerIND TECH RES INST·Filed 2000·Granted Oct 16, 2001·22 cites·29 claims
- 0472US6352901B1Method of fabricating a bipolar junction transistor using multiple selectively implanted collector regionsIND TECH RES INST·Filed 2000·Granted Mar 5, 2002·21 cites·20 claims
- 0568US7238969B2Semiconductor layout structure for ESD protection circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 3, 2007·4 cites·18 claims
- 0667US7372102B2Structure having a shallow trench-deep trench isolation region for a BiCMOS/CMOS technologyTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 13, 2008·3 cites·12 claims
- 0763US7015086B2Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technologyTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 21, 2006·10 cites·14 claims
- 0855US8445311B2Method of fabricating a differential doped solar cellCHANG CHI-HSIUNG·Filed 2011·Granted May 21, 2013·0 cites·10 claims
- 0955US5869380AMethod for forming a bipolar junction transistorIND TECH RES INST·Filed 1998·Granted Feb 9, 1999·18 cites·16 claims
- 1051US2013288421A1Method of fabricating a differential doped solar cellBIG SUN ENERGY TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 1147US7250344B2Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technologyTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 31, 2007·0 cites·14 claims
- 1231US6847061B2Elimination of implant damage during manufacture of HBTTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 25, 2005·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →