Inventor · disambiguated record
Kuo-Pin Chang
Also filed as: CHANG KUO-PIN
49 granted patents·26 pending applications·379 citations·filing 1999–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD42MACRONIX INT CO LTD24CHANG KUO-PIN4CHIEN WEI-CHIH1HUNG SHUO-NAN1
Top patents by PatentIndex Score
75 records- 0198US8067815B2Aluminum copper oxide based memory devices and methods for manufactureCHIEN WEI-CHIH·Filed 2008·Granted Nov 29, 2011·104 cites·21 claims
- 0297US10593697B1Memory deviceMACRONIX INT CO LTD·Filed 2019·Granted Mar 17, 2020·15 cites·20 claims
- 0396US9620217B2Sub-block eraseMACRONIX INT CO LTD·Filed 2015·Granted Apr 11, 2017·24 cites·18 claims
- 0496US7777215B2Resistive memory structure with buffer layerMACRONIX INT CO LTD·Filed 2008·Granted Aug 17, 2010·57 cites·29 claims
- 0591US9721668B23D non-volatile memory array with sub-block erase architectureMACRONIX INT CO LTD·Filed 2015·Granted Aug 1, 2017·12 cites·19 claims
- 0689US7960224B2Operation method for multi-level switching of metal-oxide based RRAMMACRONIX INT CO LTD·Filed 2009·Granted Jun 14, 2011·21 cites·15 claims
- 0788US9685233B2Programming multibit memory cellsMACRONIX INT CO LTD·Filed 2014·Granted Jun 20, 2017·11 cites·17 claims
- 0888US8760928B2NAND flash biasing operationMACRONIX INT CO LTD·Filed 2012·Granted Jun 24, 2014·13 cites·22 claims
- 0988US8134865B2Operating method of electrical pulse voltage for RRAM applicationCHANG KUO-PIN·Filed 2009·Granted Mar 13, 2012·7 cites·31 claims
- 1085US10811427B1Semiconductor structure and manufacturing method thereofMACRONIX INT CO LTD·Filed 2019·Granted Oct 20, 2020·4 cites·7 claims
- 1184US9530503B2And-type SGVC architecture for 3D NAND flashMACRONIX INT CO LTD·Filed 2015·Granted Dec 27, 2016·7 cites·20 claims
- 1284US7943920B2Resistive memory structure with buffer layerMACRONIX INT CO LTD·Filed 2010·Granted May 17, 2011·10 cites·16 claims
- 1383US10878915B1Memory device and method for programming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·3 cites·20 claims
- 1483US2025351378A1Phase change material switch circuit for enhanced signal isolation and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1582US10163849B2Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·20 claims
- 1681US9171636B2Hot carrier generation and programming in NAND flashMACRONIX INT CO LTD·Filed 2013·Granted Oct 27, 2015·9 cites·23 claims
- 1780US2025355289A1Optical device with phase-change materials and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1880US2024365552A1Method of manufacturing integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1979US2025365985A1Cross-point architecture for pcramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2079US2024387667A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2178US9607702B2Sub-block page erase in 3D p-channel flash memoryMACRONIX INT CO LTD·Filed 2015·Granted Mar 28, 2017·5 cites·19 claims
- 2278US9466384B1Memory device and associated erase methodMACRONIX INT CO LTD·Filed 2015·Granted Oct 11, 2016·5 cites·20 claims
- 2376US12142653B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 2476US2025253004A1One-Time Programmable (OTP) Memory and Method of Operating the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2575US12443061B2Optical device with phase-change materials and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 2674US12490503B2Voltage regulator having variable output capacitance and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 2774US2024389342A1Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2873US12453101B2Phase change material switch circuit for enhanced signal isolation and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 2973US12446228B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 3071US12217924B2Heat controlled switchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 3171US12063785B2Integrated circuit, memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 13, 2024·0 cites·20 claims
- 3270US12268103B2Phase change material switch with improved thermal confinement and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 3370US11069652B2Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 20, 2021·0 cites·20 claims
- 3469US12419061B2Cross-point architecture for PCRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 3568US11527630B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 3668US2025204287A1Phase change material switch with improved thermal confinement and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3767US9761319B1Reading method for preventing read disturbance and memory using the sameMACRONIX INT CO LTD·Filed 2016·Granted Sep 12, 2017·2 cites·17 claims
- 3866US9520199B2Memory device and reading method thereofMACRONIX INT CO LTD·Filed 2015·Granted Dec 13, 2016·2 cites·4 claims
- 3965US12308078B2One-time programmable (OTP) memory and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 4065US7981742B2Semiconductor device, data element thereof and method of fabricating the sameMACRONIC INTERNAT CO LTD·Filed 2008·Granted Jul 19, 2011·2 cites·25 claims
- 4164US9373409B2Systems and methods for reduced program disturb for 3D NAND flashMACRONIX INT CO LTD·Filed 2014·Granted Jun 21, 2016·3 cites·16 claims
- 4264US9361989B1Memory device and data erasing method thereofMACRONIX INT CO LTD·Filed 2014·Granted Jun 7, 2016·2 cites·20 claims
- 4364US8501574B2Resistive memory device and manufacturing method thereof and operating method thereofCHANG KUO-PIN·Filed 2009·Granted Aug 6, 2013·2 cites·25 claims
- 4464US2025182988A1Method for fabricating a heat controlled switchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4563US10535629B2Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 4663US8284597B2Diode memoryCHANG KUO-PIN·Filed 2010·Granted Oct 9, 2012·3 cites·20 claims
- 4760US9490017B2Forced-bias method in sub-block eraseMACRONIX INT CO LTD·Filed 2015·Granted Nov 8, 2016·2 cites·19 claims
- 4859US6243921B1Clip assembly for a pacifierFiled 1999·Granted Jun 12, 2001·46 cites·1 claims
- 4959US2024389486A1Capacitor circuit providing self-adjusting capacitance and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5057US9747989B1Memory device and control method thereofMACRONIX INT CO LTD·Filed 2017·Granted Aug 29, 2017·1 cites·20 claims
Showing the top 50 of 75 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →