Inventor · disambiguated record

Kuo-Yi Chao

Also filed as: CHAO KUO-YI

58 granted patents·12 pending applications·64 citations·filing 2015–2025

98Inventor score

Technology areasH10W H10P H10D H01L G11C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD70

Top patents by PatentIndex Score

70 records

0197US11189525B2Via-first process for connecting a contact and a gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·7 cites·20 claims
0297US9647116B1Method for fabricating self-aligned contact in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·19 cites·20 claims
0396US11532561B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
0496US10923573B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·8 cites·20 claims
0595US11888049B2Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
0693US12057392B2Conductive features having varying resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·20 claims
0789US12176435B2Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·1 cites·20 claims
0889US11322394B2Contact formation method and related structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
0988US10418453B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·3 cites·20 claims
1087US12419102B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
1186US12376277B2Compact electrical connection that can be used to form an SRAM cell and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
1286US12342598B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
1385US10535555B2Contact plugs and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·3 cites·20 claims
1484US12278188B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
1584US12243940B2Methods of forming air spacers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
1684US11393724B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 19, 2022·1 cites·20 claims
1784US2025311265A1Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1883US12506034B2Polishing interconnect structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
1983US12349381B2Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
2083US2025239527A1Different Via Configurations for Different Via Interface RequirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2182US12068201B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
2282US11227830B2Conductive features having varying resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·2 cites·20 claims
2382US10269621B2Contact plugs and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·3 cites·20 claims
2482US2024371687A1Via-first process for connecting a contact and a gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2581US12125743B2Via-first process for connecting a contact and a gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
2681US10096525B2Method for fabricating self-aligned contact in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 9, 2018·2 cites·20 claims
2780US12230712B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
2880US11901426B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
2980US2025248075A1Methods of forming air spacers in semicondutor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3079US12142565B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
3179US11856745B2Compact electrical connection that can be used to form an SRAM cell and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
3279US11227950B2Methods of forming air spacers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·1 cites·20 claims
3378US11721590B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·0 cites·20 claims
3478US11682729B2Methods of forming air spacers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 20, 2023·0 cites·20 claims
3578US2025194141A1Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3677US2024379378A1Metal Contacts on Metal Gates and Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3777US2024355730A1Conductive features having varying resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3876US11915971B2Contact formation method and related structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
3976US11735665B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
4075US2025015080A1Fin-type field effect transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4175US2025118559A1Mandrel structures and methods of fabricating the same in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4275US2025056851A1Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4374US11978664B2Polishing interconnect structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
4474US11670544B2Via-first process for connecting a contact and a gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
4574US11532717B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
4674US11532733B1Dielectric isolation structure for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
4774US11107896B2Vertical interconnect features and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·1 cites·20 claims
4874US10950728B2Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 16, 2021·2 cites·20 claims
4974US10755945B2Metal contacts on metal gates and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·1 cites·20 claims
5072US11621267B2Compact electrical connection that can be used to form an SRAM cell and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 4, 2023·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →