Inventor · disambiguated record
Kuei-Ming Chen
Also filed as: CHEN KUEI-MING
21 granted patents·13 pending applications·22 citations·filing 2009–2025
91Inventor score
Top patents by PatentIndex Score
34 records- 0195US11923237B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·2 cites·20 claims
- 0293US10014402B1High electron mobility transistor (HEMT) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 3, 2018·9 cites·20 claims
- 0391US11222849B2Substrate loss reduction for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·2 cites·20 claims
- 0490US11515408B2Rough buffer layer for group III-V devices on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·2 cites·20 claims
- 0590US2025344432A1Rough buffer layer for group iii-v devices on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0688US2025366108A1Diffusion barrier layer for source and drain structures to increase transistor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0785US12426295B2Rough buffer layer for group III-V devices on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 0883US12439662B2Diffusion barrier layer for source and drain structures to increase transistor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 0983US12334389B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1083US9818858B1Multi-layer active layer having a partial recessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·4 cites·20 claims
- 1183US2024379570A1Substrate loss reduction for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1282US2025311277A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1381US12278139B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 1481US12148706B2Substrate loss reduction for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 1579US11862720B2Rough buffer layer for group III-V devices on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 1678US11901413B2Diffusion barrier layer for source and drain structures to increase transistor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 1778US2025357376A1Semiconductor Structures With Improved ReliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1877US2025318229A1Buffer structure with interlayer buffer layers for high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1976US11652058B2Substrate loss reduction for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 16, 2023·0 cites·20 claims
- 2075US12389633B2Source/drains in semiconductor devices and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·16 claims
- 2173US12255232B2Gallium nitride drain structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 18, 2025·0 cites·20 claims
- 2273US10068976B2Enhancement mode field-effect transistor with a gate dielectric layer recessed on a composite barrier layer for high static performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 4, 2018·2 cites·20 claims
- 2370US2024266403A1Buffer structure with interlayer buffer layers for high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2469US12506089B2Semiconductor structures with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 2569US2022336652A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2668US11824099B2Source/drains in semiconductor devices and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 21, 2023·0 cites·20 claims
- 2768US2025194188A1Gallium nitride drain structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2857US8541314B2Method for smoothing group III nitride semiconductor substrateLEE WEI-I·Filed 2011·Granted Sep 24, 2013·1 cites·6 claims
- 2956US11522049B2Diffusion barrier layer for source and drain structures to increase transistor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·0 cites·20 claims
- 3054US2019305122A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Application pending·0 cites
- 3151US2010252834A1Method for growing group iii-v nitride film and structure thereofUNIV NAT CHIAO TUNG·Filed 2009·Application pending·0 cites
- 3243US2020075314A1Doped buffer layer for group iii-v devices on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Application pending·0 cites
- 3341US2011316001A1Method for growing group iii-v nitride film and structure thereofLEE WEI I·Filed 2011·Application pending·0 cites
- 3437US8563437B2Method for treating group III nitride semiconductorLEE WEI-I·Filed 2011·Granted Oct 22, 2013·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →