Inventor · disambiguated record
Kuen-Yi Chen
Also filed as: CHEN KUEN-YI
5 granted patents·31 pending applications·0 citations·filing 2022–2025
62Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD36
Top patents by PatentIndex Score
36 records- 0184US2025365977A1Ferroelectric tunnel junction (ftj) structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0282US2025342878A1Gain-cell random access memory with enhanced retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0382US2025344400A1Anti-ferroelectric tunnel junction with asymmetrical metal electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0480US2025359083A1Methods of forming ferromagnetic plates for enhancing inductanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0579US2025344399A1Ferroelectric tunnel junction memory devices with enhanced read windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0679US2025365980A1Ferroelectric tunnel junctions with conductive electrodes having asymmetric nitrogen or oxygen profilesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0778US2025365967A1Ferroelectric-based memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0877US2025364482A1Memory Device and Method of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0975US2025169051A1Gate structure disposed between fin structures to decrease leakage in gain cell random access memory (gcram)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1074US2025366370A1Pyroelectric device for a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1174US2025324564A1Gate structure disposed between fin structures to decrease leakage in gain cell random access memory (gcram)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1272US2024371798A1Energy harvest and storage device for semiconductor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1371US2024379656A1Integrated chip with solid-state power storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1471US2024389349A1Memory device structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1568US12469803B2Energy harvest and storage device for semiconductor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 1668US12200943B2Memory device structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 1767US12408349B2Ferroelectric tunnel junctions with conductive electrodes having asymmetric nitrogen or oxygen profilesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 1867US12302628B2Integrated chip with solid-state power storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 1967US2023389324A1Ferroelectric-based memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2066US2025166695A1Gain-cell random access memory with enhanced retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2165US2023413673A1Pyroelectric device for a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2264US12426272B2Ferroelectric tunnel junction memory devices with enhanced read windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 2364US2023011305A1Anti-ferroelectric tunnel junction with asymmetrical metal electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2464US2023299042A1Memory Device and Method of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2563US2024047508A1Ferromagnetic plates for enhancing inductance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2658US2025142845A1Catalytic metal plate in a metal-insulator-metal capacitor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2756US2024381662A1Ferroelectric memory device comprising a chimney seed structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2856US2024397728A1Ferroelectric memory device with semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2956US2025301621A1Asymmetrical capacitor having low leakage current and memory cell using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3055US2024234401A9Semiconductor die package and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3153US2025142836A1Neural network circuit and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3252US2024147731A1Semiconductor devices and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3351US2024040799A1Ferroelectric tunnel junction deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3449US2025322865A1Gain cell memory device using enhanced sensing scheme and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3547US2023345733A1Fin structure for increasing performance of ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3645US2024371439A1Random access memory apparatus, memory system, and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →