Inventor · disambiguated record
Kuang-Hsin Chen
Also filed as: CHEN KUANG-HSIN
71 granted patents·8 pending applications·355 citations·filing 2003–2024
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD48TAIWAN SEMICONDUCTOR MFG15SILICONWARE PRECISION INDUSTRIES CO LTD12FREESCALE SEMICONDUCTOR INC1TAIWAN SEMICONDUCTOR MANUFACTRING COMPANY LTD1
Top patents by PatentIndex Score
79 records- 0196US8697515B2Method of making a FinFET deviceYIN JOANNA CHAW YANE·Filed 2012·Granted Apr 15, 2014·51 cites·20 claims
- 0296US7183596B2Composite gate structure in an integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 27, 2007·58 cites·9 claims
- 0395US7205601B2FinFET split gate EEPROM structure and method of its fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 17, 2007·45 cites·20 claims
- 0494US9184087B2Mechanisms for forming FinFETs with different fin heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 10, 2015·12 cites·20 claims
- 0591US9818683B2Electronic package and method of fabricating the sameSILICONWARE PRECISION INDUSTRIES CO LTD·Filed 2015·Granted Nov 14, 2017·9 cites·12 claims
- 0691US9583362B2Metal gate structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·12 cites·19 claims
- 0791US7538351B2Method for forming an SOI structure with improved carrier mobility and ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 26, 2009·22 cites·28 claims
- 0890US9257505B2Structures and formation methods of finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·12 cites·20 claims
- 0989US10546786B2Method of fabricating a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·3 cites·20 claims
- 1089US7297587B2Composite gate structure in an integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 20, 2007·15 cites·20 claims
- 1188US2024347390A1Method of fabricating a finfet deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1285US10199320B2Method of fabricating electronic packageSILICONWARE PRECISION INDUSTRIES CO LTD·Filed 2017·Granted Feb 5, 2019·4 cites·13 claims
- 1385US9324577B2Modified self-aligned contact process and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 26, 2016·5 cites·13 claims
- 1485US7528078B2Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted May 5, 2009·11 cites·20 claims
- 1584US12191401B2Manufacturing method for semiconductor structure having a plurality of finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 7, 2025·0 cites·20 claims
- 1684US10840143B2Methods for forming a semiconductor arrangement of fins having multiple heights and an alignment markTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·2 cites·20 claims
- 1784US9947766B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 17, 2018·2 cites·20 claims
- 1883US10062614B2FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·2 cites·20 claims
- 1982US9911658B2Methods for forming a semiconductor arrangement with multiple-height fins and substrate trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 6, 2018·2 cites·20 claims
- 2082US9559011B2Mechanisms for forming FinFETs with different fin heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·2 cites·19 claims
- 2181US2025098226A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2280US10008494B2Semiconductor component and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 26, 2018·3 cites·20 claims
- 2379US9122828B2Apparatus and method for designing an integrated circuit layout having a plurality of cell technologiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 1, 2015·5 cites·18 claims
- 2478US7986029B2Dual SOI structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 26, 2011·8 cites·18 claims
- 2577US10134626B2Mechanisms for forming FinFETs with different fin heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·1 cites·20 claims
- 2676US12033898B2Method of fabricating a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·20 claims
- 2775US9842761B2Mechanisms for forming FinFETs with different fin heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 12, 2017·1 cites·20 claims
- 2875US9673340B1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·2 cites·20 claims
- 2974US11916151B2Semiconductor structure having fin with all around gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 3074US9704970B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·1 cites·20 claims
- 3174US9570568B2Semiconductor component and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·2 cites·20 claims
- 3273US11469144B2Semiconductor arrangement with fin features having different heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
- 3372US9306023B2Semiconductor device with gate stacks and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 5, 2016·2 cites·20 claims
- 3472US6955955B2STI liner for SOI structureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Oct 18, 2005·16 cites·29 claims
- 3570US9711611B2Modified self-aligned contact process and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·1 cites·20 claims
- 3670US7074692B2Method for reducing a short channel effect for NMOS devices in SOI circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 11, 2006·21 cites·29 claims
- 3769US10978352B2FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·0 cites·20 claims
- 3869US10205024B2Semiconductor structure having field plate and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 12, 2019·1 cites·20 claims
- 3969US9508590B2Methods and apparatus of metal gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 29, 2016·1 cites·20 claims
- 4066US11011419B2Method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·0 cites·20 claims
- 4165US7265425B2Semiconductor device employing an extension spacer and a method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 4, 2007·12 cites·33 claims
- 4262US9627307B2Semiconductor package and fabrication method thereofSILICONWARE PRECISION INDUSTRIES CO LTD·Filed 2015·Granted Apr 18, 2017·1 cites·10 claims
- 4361US10177036B2Semiconductor arrangement with fins having multiple heights and a dielectric layer recessed in the substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 8, 2019·0 cites·20 claims
- 4460US11158739B2Semiconductor structure having field plate and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·0 cites·20 claims
- 4560US7732298B2Metal salicide formation having nitride liner to reduce silicide stringer and encroachmentTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 8, 2010·2 cites·18 claims
- 4659US9231067B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 5, 2016·0 cites·20 claims
- 4757US9614088B2Metal gate structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 4, 2017·0 cites·20 claims
- 4857US9425285B2Fabricating method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·0 cites·20 claims
- 4956US7663185B2FIN-FET device structure formed employing bulk semiconductor substrateTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 16, 2010·1 cites·17 claims
- 5055US10629481B2Method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 21, 2020·0 cites·20 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →