Inventor · disambiguated record
Kuan-Lun Cheng
Also filed as: CHENG KUAN · CHENG KUAN-LUN
435 granted patents·136 pending applications·770 citations·filing 2001–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD560YOUNG OPTICS INC3TAIWAIN SEMICONDUCTOR MFG COMP1TAIWAN SEMICONDUCTOR MFG1TAIWAN SEMICONDUCTOR MFG CO LID1
Top patents by PatentIndex Score
571 records- 0199US11615962B2Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·6 cites·20 claims
- 0299US11502168B2Tuning threshold voltage in nanosheet transitor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·7 cites·20 claims
- 0399US11462612B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 4, 2022·6 cites·20 claims
- 0499US11450664B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
- 0599US11374093B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·6 cites·20 claims
- 0699US11362213B2Method for manufacturing a FinFET device with a backside power rail and a backside self-aligned via by etching an extended source trenchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·8 cites·20 claims
- 0799US11355601B2Semiconductor devices with backside power rail and backside self-aligned viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·14 cites·20 claims
- 0899US11289606B2Capacitance reduction for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·15 cites·20 claims
- 0999US11158634B1Backside PN junction diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 26, 2021·11 cites·20 claims
- 1098US11961915B2Capacitance reduction for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·4 cites·20 claims
- 1198US11916072B2Gate isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·3 cites·20 claims
- 1298US11862701B2Stacked multi-gate structure and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·5 cites·20 claims
- 1398US11830769B2Semiconductor device with air gaps and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·4 cites·20 claims
- 1498US11798944B2Integration of silicon channel nanostructures and silicon-germanium channel nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·4 cites·20 claims
- 1598US11710667B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 25, 2023·5 cites·20 claims
- 1698US11621197B2Semiconductor device with gate cut feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·5 cites·20 claims
- 1798US11600533B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·4 cites·20 claims
- 1898US11527534B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·5 cites·20 claims
- 1998US11450662B2Gate isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
- 2098US11387237B2Semiconductor component having a fin and an epitaxial contact structure over an epitaxial layer thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·4 cites·20 claims
- 2198US11342413B2Selective liner on backside via and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·5 cites·20 claims
- 2298US11296081B2Integration of silicon channel nanostructures and silicon-germanium channel nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·4 cites·20 claims
- 2398US11239325B2Semiconductor device having backside via and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·6 cites·20 claims
- 2498US11239208B2Packaged semiconductor devices including backside power rails and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·16 cites·20 claims
- 2598US11227917B1Nano-sheet-based devices with asymmetric source and drain configurationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·9 cites·20 claims
- 2698US11189706B2FinFET structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·5 cites·20 claims
- 2798US11145734B1Semiconductor device with dummy fin and liner and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·7 cites·20 claims
- 2898US10211307B2Methods of manufacturing inner spacers in a gate-all-around (GAA) FET through multi-layer spacer replacementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 19, 2019·22 cites·20 claims
- 2998US9991262B1Semiconductor device on hybrid substrate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·24 cites·20 claims
- 3097US12119391B2Fin-based semiconductor device structure including self-aligned contacts and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 15, 2024·2 cites·20 claims
- 3197US12033899B2Self-aligned metal gate for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·2 cites·20 claims
- 3297US11996410B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 3397US11996334B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 3497US11990529B2Air gap in inner spacers and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·2 cites·20 claims
- 3597US11961840B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
- 3697US11848372B2Method and structure for reducing source/drain contact resistance at wafer backsideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·3 cites·20 claims
- 3797US11735482B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·2 cites·20 claims
- 3897US11610805B2Replacement material for backside gate cut featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·4 cites·20 claims
- 3997US11532744B2Gate cut structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·4 cites·20 claims
- 4097US11450665B2Semiconductor structure with self-aligned backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·4 cites·20 claims
- 4197US11450600B2Semiconductor devices including decoupling capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
- 4297US11417750B2Gate air spacer for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·4 cites·20 claims
- 4397US11031292B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·16 cites·20 claims
- 4497US10483378B2Epitaxial features confined by dielectric fins and spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·12 cites·20 claims
- 4596US12170231B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 17, 2024·2 cites·20 claims
- 4696US12107131B2Gate-all-around devices having self-aligned capping between channel and backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·2 cites·20 claims
- 4796US12040371B2Multi-layer channel structures and methods of fabricating the same in field-effect transistors preliminary classTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·2 cites·20 claims
- 4896US12021123B2Semiconductor devices with backside power rail and backside self-aligned viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·2 cites·20 claims
- 4996US11855078B2Semiconductor device structure including forksheet transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 5096US11735587B2Backside PN junction diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
Showing the top 50 of 571 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →