Inventor · disambiguated record

Kuo-Cheng Chiang

Also filed as: CHIANG KUO-CHENG

373 granted patents·285 pending applications·489 citations·filing 2008–2025

99Inventor score

Technology areasH10D H10P H10W H01L B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD655 PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC1 TAIWAN SEMICONDUCTOR MFG C LTD1 TU KUO-CHI1

Top patents by PatentIndex Score

658 records

0199US11615962B2Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·6 cites·20 claims
0299US11502168B2Tuning threshold voltage in nanosheet transitor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·7 cites·20 claims
0399US11462612B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 4, 2022·6 cites·20 claims
0499US11450664B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
0599US11387346B2Gate patterning process for multi-gate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·11 cites·20 claims
0699US11362213B2Method for manufacturing a FinFET device with a backside power rail and a backside self-aligned via by etching an extended source trenchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·8 cites·20 claims
0799US11355601B2Semiconductor devices with backside power rail and backside self-aligned viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·14 cites·20 claims
0899US11289606B2Capacitance reduction for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·15 cites·20 claims
0998US11961915B2Capacitance reduction for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·4 cites·20 claims
1098US11948973B2Gate-all-around field-effect transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·4 cites·20 claims
1198US11916072B2Gate isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·3 cites·20 claims
1298US11855096B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·4 cites·20 claims
1398US11798944B2Integration of silicon channel nanostructures and silicon-germanium channel nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·4 cites·20 claims
1498US11710667B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 25, 2023·5 cites·20 claims
1598US11616062B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·7 cites·20 claims
1698US11600533B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·4 cites·20 claims
1798US11527534B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·5 cites·20 claims
1898US11450662B2Gate isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
1998US11444170B1Semiconductor device with backside self-aligned power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 13, 2022·5 cites·20 claims
2098US11404325B2Silicon and silicon germanium nanowire formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·5 cites·20 claims
2198US11315925B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·7 cites·20 claims
2298US11296082B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·6 cites·20 claims
2398US11296081B2Integration of silicon channel nanostructures and silicon-germanium channel nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·4 cites·20 claims
2498US11264327B2Backside power rail structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·10 cites·20 claims
2598US11257815B2Work function design to increase density of nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·4 cites·20 claims
2698US11245036B1Latch-up preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·4 cites·20 claims
2798US11222948B2Semiconductor structure and method of fabricating the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·4 cites·20 claims
2898US11145734B1Semiconductor device with dummy fin and liner and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·7 cites·20 claims
2997US12342616B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·2 cites·20 claims
3097US12119391B2Fin-based semiconductor device structure including self-aligned contacts and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 15, 2024·2 cites·20 claims
3197US12033899B2Self-aligned metal gate for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·2 cites·20 claims
3297US11996410B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
3397US11996334B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
3497US11967594B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
3597US11961840B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
3697US11929413B2Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
3797US11855079B2Integrated circuit with backside trench for metal gate definitionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
3897US11756958B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·20 claims
3997US11735482B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·2 cites·20 claims
4097US11450663B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
4197US11450665B2Semiconductor structure with self-aligned backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·4 cites·20 claims
4297US11387181B2Integrated circuits with backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·3 cites·20 claims
4397US11328963B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·3 cites·20 claims
4497US11031292B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·16 cites·20 claims
4597US10818777B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 27, 2020·4 cites·20 claims
4696US12272690B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·2 cites·20 claims
4796US12170231B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 17, 2024·2 cites·20 claims
4896US12107131B2Gate-all-around devices having self-aligned capping between channel and backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·2 cites·20 claims
4996US12040371B2Multi-layer channel structures and methods of fabricating the same in field-effect transistors preliminary classTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·2 cites·20 claims
5096US12021123B2Semiconductor devices with backside power rail and backside self-aligned viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·2 cites·20 claims

Showing the top 50 of 658 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →