Inventor · disambiguated record
Kuang-Yuan Hsu
Also filed as: HSU KUANG-YUAN
82 granted patents·7 pending applications·1,844 citations·filing 2004–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD42TAIWAN SEMICONDUCTOR MFG16PLAYNITRIDE DISPLAY CO LTD7LIM PENG-SOON6LEE DA-YUAN5
Top patents by PatentIndex Score
89 records- 0198US11053584B2System and method for supplying a precursor for an atomic layer deposition (ALD) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·278 cites·20 claims
- 0298US9859386B2Self aligned contact schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·496 cites·20 claims
- 0398US9852947B1Forming sidewall spacers using isotropic etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 26, 2017·28 cites·20 claims
- 0498US9548366B1Self aligned contact schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 17, 2017·583 cites·20 claims
- 0597US8278173B2Method of fabricating gate structuresLIM PENG-SOON·Filed 2010·Granted Oct 2, 2012·34 cites·14 claims
- 0697US8048810B2Method for metal gate N/P patterningTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 1, 2011·137 cites·20 claims
- 0796US10153351B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 11, 2018·14 cites·19 claims
- 0896US8334198B2Method of fabricating a plurality of gate structuresCHEN JIAN-HAO·Filed 2011·Granted Dec 18, 2012·50 cites·20 claims
- 0993US10312075B2Treatment system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 4, 2019·6 cites·20 claims
- 1093US9431505B2Method of making a gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·7 cites·20 claims
- 1193US8329546B2Modified profile gate structure for semiconductor device and methods of forming thereofLEE DA-YUAN·Filed 2010·Granted Dec 11, 2012·22 cites·20 claims
- 1293US8008143B2Method to form a semiconductor device having gate dielectric layers of varying thicknessesTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 30, 2011·22 cites·20 claims
- 1392US10529553B2Treatment system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 7, 2020·4 cites·20 claims
- 1492US8575727B2Gate structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 5, 2013·10 cites·14 claims
- 1591US9941373B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·4 cites·20 claims
- 1690US11171134B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·3 cites·20 claims
- 1790US11063181B2Patterned epitaxial substrate and semiconductor structurePLAYNITRIDE DISPLAY CO LTD·Filed 2019·Granted Jul 13, 2021·3 cites·23 claims
- 1890US10796898B2Treatment system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 6, 2020·2 cites·20 claims
- 1989US10443127B2System and method for supplying a precursor for an atomic layer deposition (ALD) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 15, 2019·4 cites·24 claims
- 2089US9362404B2Doping for FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 7, 2016·8 cites·18 claims
- 2189US9076889B2Replacement gate semiconductor deviceLEE DA-YUAN·Filed 2011·Granted Jul 7, 2015·8 cites·14 claims
- 2289US8283222B2Method to form a semiconductor device having gate dielectric layers of varying thicknessHSU KUANG-YUAN·Filed 2011·Granted Oct 9, 2012·14 cites·20 claims
- 2389US8093117B2Method of forming a metal gateTSAU HSUEH WEN·Filed 2010·Granted Jan 10, 2012·11 cites·20 claims
- 2488US2025366145A1Semiconductor devices having silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2587US9449832B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·3 cites·20 claims
- 2687US8847333B2Techniques providing metal gate devices with multiple barrier layersYu xiong-fei·Filed 2011·Granted Sep 30, 2014·9 cites·20 claims
- 2786US9831243B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 28, 2017·3 cites·20 claims
- 2886US8334197B2Method of fabricating high-k/metal gate deviceLEE DA-YUAN·Filed 2009·Granted Dec 18, 2012·13 cites·20 claims
- 2985US9048334B2Metal gate structureLIM PENG-SOON·Filed 2011·Granted Jun 2, 2015·4 cites·13 claims
- 3082US11784873B2Ultra-reliable and low latency communications local breakout method and system for next generation radio access networkWISTRON NEWEB CORP·Filed 2021·Granted Oct 10, 2023·1 cites·14 claims
- 3181US10714586B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·2 cites·16 claims
- 3281US10651283B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 12, 2020·1 cites·20 claims
- 3381US9105624B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 11, 2015·3 cites·20 claims
- 3480US2024379806A1Semiconductor devices having silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3579US12477807B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 3679US11133447B2Micro light-emitting device, structure, and display thereofPLAYNITRIDE DISPLAY CO LTD·Filed 2019·Granted Sep 28, 2021·1 cites·23 claims
- 3779US10867789B2Treatment to control deposition rateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·1 cites·20 claims
- 3879US9685444B2Semiconductor device with metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 20, 2017·2 cites·19 claims
- 3978US9659776B2Doping for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·2 cites·20 claims
- 4077US8952462B2Method and apparatus of forming a gateCHEN JIAN-HAO·Filed 2010·Granted Feb 10, 2015·4 cites·20 claims
- 4177US8357603B2Metal gate fill and method of makingTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 22, 2013·6 cites·20 claims
- 4276US8530294B2Stress modulation for metal gate semiconductor deviceLEE WEI-YANG·Filed 2011·Granted Sep 10, 2013·6 cites·20 claims
- 4376US8367563B2Methods for a gate replacement processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Feb 5, 2013·5 cites·20 claims
- 4476US8193081B2Method and system for metal gate formation with wider metal gate fill marginLIM PENG-SOON·Filed 2009·Granted Jun 5, 2012·6 cites·20 claims
- 4576US2022277956A1Treatment to Control Deposition RateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4675US12446359B2Epitaxial structure and micro light emitting devicePLAYNITRIDE DISPLAY CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·18 claims
- 4775US9035373B2Gate dielectric of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 19, 2015·3 cites·13 claims
- 4874US11670500B2Treatment system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
- 4974US11227929B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
- 5074US8633536B2Gate dielectric of semiconductor deviceLEE DA-YUAN·Filed 2011·Granted Jan 21, 2014·3 cites·19 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →