Inventor · disambiguated record
Kuo-Ching Huang
Also filed as: HUANG KUO-CHING
105 granted patents·80 pending applications·1,344 citations·filing 1986–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD123TAIWAN SEMICONDUCTOR MFG42HUANG KUO-CHING4PRIMAX ELECTRONICS LTD3DELL PRODUCTS LP2
Top patents by PatentIndex Score
185 records- 0197US8869436B2Resistive switching random access memory structure and method to recreate filament and recover resistance windowTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 28, 2014·40 cites·22 claims
- 0296US9019743B2Method and structure for resistive switching random access memory with high reliable and high densityTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Apr 28, 2015·15 cites·20 claims
- 0396US6037222AMethod for fabricating a dual-gate dielectric module for memory embedded logic using salicide technology and polycide technologyTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 14, 2000·148 cites·15 claims
- 0494US11978740B2Semiconductor-on-insulator (SOI) semiconductor structures including a high-k dielectric layer and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·2 cites·20 claims
- 0594US10985316B2Bottom electrode structure in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·6 cites·20 claims
- 0694US9634134B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 25, 2017·11 cites·20 claims
- 0794US6165880ADouble spacer technology for making self-aligned contacts (SAC) on semiconductor integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 26, 2000·186 cites·14 claims
- 0893US12389814B2High electron affinity dielectric layer to improve cyclingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·1 cites·20 claims
- 0993USD554634SPortable electronic deviceHIGH TECH COMP CORP·Filed 2006·Granted Nov 6, 2007·55 cites·1 claims
- 1092US11696521B2High electron affinity dielectric layer to improve cyclingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 4, 2023·2 cites·20 claims
- 1192US10700070B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 30, 2020·5 cites·20 claims
- 1292US10103151B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 16, 2018·5 cites·20 claims
- 1391US9053781B2Structure and method for a forming free resistive random access memory with multi-level cellTAIWAN SEMICONDCUTOR MFG COMPANY LTD·Filed 2012·Granted Jun 9, 2015·22 cites·20 claims
- 1490US6373369B2High efficiency thin film inductorTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 16, 2002·30 cites·6 claims
- 1589US10748907B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 18, 2020·3 cites·20 claims
- 1686US6162686AMethod for forming a fuse in integrated circuit applicationTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 19, 2000·87 cites·12 claims
- 1786US6080637AShallow trench isolation technology to eliminate a kink effectTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 27, 2000·88 cites·25 claims
- 1885US6420226B1Method of defining a buried stack capacitor structure for a one transistor RAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 16, 2002·38 cites·27 claims
- 1984US9893122B2Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·3 cites·20 claims
- 2084US6638813B1Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 28, 2003·33 cites·30 claims
- 2184US2025365977A1Ferroelectric tunnel junction (ftj) structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2283US6307213B1Method for making a fuse structure for improved repaired yields on semiconductor memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 23, 2001·31 cites·5 claims
- 2383US2025351378A1Phase change material switch circuit for enhanced signal isolation and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2483US2025344617A1High electron affinity dielectric layer to improve cyclingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2582US10461126B2Memory circuit and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·4 cites·20 claims
- 2682US9613965B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 4, 2017·3 cites·20 claims
- 2782US9230647B2Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 5, 2016·4 cites·20 claims
- 2882US8825122B2Hand-held deivceHUANG CHE-HUNG·Filed 2011·Granted Sep 2, 2014·8 cites·8 claims
- 2982US7847847B2Structure for CMOS image sensor with a plurality of capacitorsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 7, 2010·7 cites·28 claims
- 3082US6248673B1Hydrogen thermal annealing method for stabilizing microelectronic devicesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 19, 2001·30 cites·19 claims
- 3182US2025342878A1Gain-cell random access memory with enhanced retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3282US2025344400A1Anti-ferroelectric tunnel junction with asymmetrical metal electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3381US9991368B2Vertical BJT for high density memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 5, 2018·4 cites·20 claims
- 3481US9361980B1RRAM array using multiple reset voltages and method of resetting RRAM array using multiple reset voltagesTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·6 cites·20 claims
- 3581US6661043B1One-transistor RAM approach for high density memory applicationTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 9, 2003·27 cites·61 claims
- 3681US2025365976A1Memory Structure And Method Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3780US10879391B2Wakeup-free ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
- 3880US2025359083A1Methods of forming ferromagnetic plates for enhancing inductanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3980US2025355289A1Optical device with phase-change materials and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4079US9178040B2Innovative approach of 4F2 driver formation for high-density RRAM and MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Nov 3, 2015·5 cites·19 claims
- 4179US2025344399A1Ferroelectric tunnel junction memory devices with enhanced read windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4279US2025357324A1Passive devices in bonding layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4379US2025365985A1Cross-point architecture for pcramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4479US2025365980A1Ferroelectric tunnel junctions with conductive electrodes having asymmetric nitrogen or oxygen profilesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4578US6833578B1Method and structure improving isolation between memory cell passing gate and capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 21, 2004·23 cites·21 claims
- 4678US2025365967A1Ferroelectric-based memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4776US6027969ACapacitor structure for a dynamic random access memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 22, 2000·35 cites·24 claims
- 4876US2025253004A1One-Time Programmable (OTP) Memory and Method of Operating the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4976US2025336752A1Techniques for heat dispersion in 3d integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5076US2025336758A1Thermal dissipation in power ic using pyroelectric materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 185 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →