Inventor · disambiguated record
Ku-Youl Jung
Also filed as: JUNG KU YOUL
24 granted patents·5 pending applications·23 citations·filing 2011–2025
92Inventor score
Top patents by PatentIndex Score
29 records- 0188US9711202B2Electronic deviceSK HYNIX INC·Filed 2016·Granted Jul 18, 2017·8 cites·16 claims
- 0282US12048252B2Magnetoresistive memory deviceKIOXIA CORP·Filed 2022·Granted Jul 23, 2024·0 cites·2 claims
- 0377US11495740B2Magnetoresistive memory deviceKIOXIA CORP·Filed 2020·Granted Nov 8, 2022·1 cites·7 claims
- 0477US10170691B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Jan 1, 2019·2 cites·19 claims
- 0576US10203380B2Electronic deviceSK HYNIX INC·Filed 2017·Granted Feb 12, 2019·1 cites·20 claims
- 0676US10042559B2Electronic devices having semiconductor memory with interface enhancement layerSK HYNIX INC·Filed 2017·Granted Aug 7, 2018·2 cites·15 claims
- 0774US10395708B2Electronic deviceSK HYNIX INC·Filed 2018·Granted Aug 27, 2019·3 cites·20 claims
- 0870US9841915B1Electronic deviceSK HYNIX INC·Filed 2017·Granted Dec 12, 2017·1 cites·20 claims
- 0965US9532636B2Cosmetic container having airtight refill caseJUNG KU YOUL·Filed 2014·Granted Jan 3, 2017·2 cites·4 claims
- 1064US12514129B2Magnetic memory deviceKIOXIA CORP·Filed 2024·Granted Dec 30, 2025·0 cites·16 claims
- 1161US9257540B2Magnetic field effect transistorUNIV KOREA RES & BUS FOUND·Filed 2012·Granted Feb 9, 2016·2 cites·6 claims
- 1259US10923168B2Method of making magnetic tunnel junction memory device with stress inducing layersSK HYNIX INC·Filed 2020·Granted Feb 16, 2021·0 cites·15 claims
- 1359US10586917B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Mar 10, 2020·0 cites·16 claims
- 1458US2025374553A1Semiconductor memory device having a magnet tunneling junctionSK HYNIX INC·Filed 2025·Application pending·0 cites
- 1557US10002903B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Jun 19, 2018·1 cites·21 claims
- 1656US2024099157A1Variable resistance element and semiconductor device including the sameSK HYNIX INC·Filed 2023·Application pending·0 cites
- 1755US12356866B2Magnetic memory deviceKIOXIA CORP·Filed 2021·Granted Jul 8, 2025·0 cites·11 claims
- 1855US10062424B2Electronic deviceSK HYNIX INC·Filed 2017·Granted Aug 28, 2018·0 cites·20 claims
- 1954US10153423B2Electronic deviceSK HYNIX INC·Filed 2017·Granted Dec 11, 2018·0 cites·28 claims
- 2053US12284811B2Magnetic memory deviceKIOXIA CORP·Filed 2021·Granted Apr 22, 2025·0 cites·7 claims
- 2149US10685692B2Electronic devices and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Jun 16, 2020·0 cites·7 claims
- 2248US10305028B2Electronic device including an under layer and a perpendicular magnetic anisotropy increasing layer having a different crystal structure from the under layerSK HYNIX INC·Filed 2018·Granted May 28, 2019·0 cites·20 claims
- 2347US2023180620A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2022·Application pending·0 cites
- 2446US10566041B2Magnetic tunnel junction memory device with stress inducing layersSK HYNIX INC·Filed 2018·Granted Feb 18, 2020·0 cites·15 claims
- 2541US10516099B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Dec 24, 2019·0 cites·15 claims
- 2638US10978637B2Method for fabricating electronic deviceSK HYNIX INC·Filed 2018·Granted Apr 13, 2021·0 cites·18 claims
- 2735US2018211994A1Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2017·Application pending·0 cites
- 2834US2018277745A1Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2017·Application pending·0 cites
- 2927US9287321B2Magnetic tunnel junction device having amorphous buffer layers that are magnetically connected together and that have perpendicular magnetic anisotropyRHIE KUNGWON·Filed 2011·Granted Mar 15, 2016·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →