Inventor · disambiguated record
Kun-Yu Lee
Also filed as: LEE KUN-YU
17 granted patents·11 pending applications·11 citations·filing 2006–2025
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD24EGALAX EMPIA TECHNOLOGY INC1LEE KUN-YU1TAIWAN SEMICONDUCTOR MFG1UNIV TSINGHUA1
Top patents by PatentIndex Score
28 records- 0196US11967504B2Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·4 cites·20 claims
- 0290US11699621B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·1 cites·20 claims
- 0388US10504795B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·3 cites·20 claims
- 0486US2025351481A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0584US2024387292A1FinFET Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0682US12302631B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 0781US2025287680A1Semiconductor device with dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0880US12342605B2Semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 0980US10867869B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·21 claims
- 1080US2025063778A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1180US2025357312A1Metal-insulator-metal (mim) capacitors with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1280US2023377991A1FinFET Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1378US12211752B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 1478US2025261444A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1574US12166074B2Gate structure in semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 1671US11923360B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 1771US11688645B2Structure and formation method of semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 1871US2025089277A1Metal-insulator-metal (mim) capacitors with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1966US11171061B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·0 cites·20 claims
- 2065US11315838B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·0 cites·20 claims
- 2157US2024429156A1Embedding Metal-Insulator-Metal Structure In Silicon Oxide In A Copper Redistribution Layer SchemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2257US2024421065A1Metal-insulator-metal structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2356US8987095B2Method of fabricating a carbon-free dielectric layer over a carbon-doped dielectric layerLEE KUN-YU·Filed 2011·Granted Mar 24, 2015·1 cites·20 claims
- 2456US7678633B2Method for forming substrates for MOS transistor components and its productsUNIV TSINGHUA·Filed 2006·Granted Mar 16, 2010·1 cites·26 claims
- 2553US11107897B2Methods of forming semiconductor devices and FinFET devices having shielding layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·19 claims
- 2652US9385208B2Semiconductor device having high-K gate dielectric layerTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jul 5, 2016·0 cites·19 claims
- 2751US10367078B2Semiconductor devices and FinFET devices having shielding layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 30, 2019·0 cites·16 claims
- 2838US2016209963A1Touch processor and methodEGALAX EMPIA TECHNOLOGY INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →