Inventor · disambiguated record
Kun-Mu Li
Also filed as: LI KUN · LI KUN-MU
99 granted patents·24 pending applications·303 citations·filing 2011–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD70BOE TECHNOLOGY GROUP CO LTD27TAIWAN SEMICONDUCTOR MFG7CHIPONE TECHNOLOGY BEIJING CO LTD4HEFEI BOE OPTOELECTRONICS TECH2
Top patents by PatentIndex Score
123 records- 0198US9287382B1Structure and method for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 15, 2016·46 cites·20 claims
- 0297US11916071B2Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
- 0397US11211473B2Epitaxial fin structures having an epitaxial buffer region and an epitaxial capping regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·3 cites·20 claims
- 0497US10868181B2Semiconductor structure with blocking layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·21 cites·20 claims
- 0597US9768178B2Semiconductor device, static random access memory cell and manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·11 cites·20 claims
- 0696US10707328B2Method of forming epitaxial fin structures of finFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 7, 2020·10 cites·20 claims
- 0794US9400595B2Unlocking method and device for touch screen terminal and touch screen terminalBOE TECHNOLOGY GROUP CO LTD·Filed 2013·Granted Jul 26, 2016·29 cites·20 claims
- 0894US9287398B2Transistor strain-inducing schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 15, 2016·12 cites·20 claims
- 0993US11216099B2Array substrate and manufacturing method thereof, display panel and display deviceCHENGDU BOE OPTOELECT TECH CO·Filed 2020·Granted Jan 4, 2022·4 cites·17 claims
- 1093US10510753B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 1193US10297690B2Method of forming a contact structure for a FinFET semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·10 cites·20 claims
- 1293US10026662B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 17, 2018·9 cites·20 claims
- 1392US9691898B2Germanium profile for channel strainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 27, 2017·9 cites·20 claims
- 1491US11888046B2Epitaxial fin structures of finFET having an epitaxial buffer region and an epitaxial capping regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 30, 2024·1 cites·20 claims
- 1591US10734520B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·3 cites·20 claims
- 1691US10164096B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·5 cites·20 claims
- 1791US9601619B2MOS devices with non-uniform P-type impurity profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 21, 2017·8 cites·20 claims
- 1890US10879355B2Profile design for improved device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·5 cites·20 claims
- 1990US10269648B1Method of fabricating a semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·7 cites·20 claims
- 2090US2025338609A1Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2189US10209272B2Testing deviceBOE TECHNOLOGY GROUP CO LTD·Filed 2016·Granted Feb 19, 2019·7 cites·19 claims
- 2289US2024397692A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2388US12426358B2Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 2488US10084089B2Source and drain stressors with recessed top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·3 cites·20 claims
- 2588US9583483B2Source and drain stressors with recessed top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 28, 2017·5 cites·18 claims
- 2688US9337337B2MOS device having source and drain regions with embedded germanium-containing diffusion barrierTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 10, 2016·7 cites·19 claims
- 2788US9209175B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 2887US10067078B1Transmission electron microscope sample alignment system and methodUNIV KING ABDULLAH SCI & TECH·Filed 2018·Granted Sep 4, 2018·4 cites·20 claims
- 2987US2024297252A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3086US11489074B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·1 cites·20 claims
- 3186US10749029B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·2 cites·20 claims
- 3286US10062781B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·2 cites·20 claims
- 3386US9768302B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·4 cites·20 claims
- 3485US11309418B2Contact structure for FinFET semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 19, 2022·3 cites·20 claims
- 3584US11075120B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·2 cites·20 claims
- 3684US10068345B1Image series alignment system and methodUNIV KING ABDULLAH SCI & TECH·Filed 2018·Granted Sep 4, 2018·6 cites·20 claims
- 3784US9666686B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·2 cites·20 claims
- 3884US2024363753A1Epitaxial Source/Drain Structure and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3983US12075607B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 4083US12009427B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 4183US10956549B2Device and method for biometric recognition, and biometric template registration methodCHIPONE TECHNOLOGY BEIJING CO LTD·Filed 2017·Granted Mar 23, 2021·5 cites·12 claims
- 4283US9922975B2Integrated circuit having field-effect trasistors with dielectric fin sidewall structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 20, 2018·2 cites·20 claims
- 4383US8815713B2Reducing pattern loading effect in epitaxyTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 26, 2014·5 cites·18 claims
- 4482US12062720B2Epitaxial source/drain structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 4582US10963715B2Device and method for biometric recognition and method for registering biometric templateCHIPONE TECHNOLOGY BEIJING CO LTD·Filed 2017·Granted Mar 30, 2021·4 cites·10 claims
- 4681US12218240B2Source/drain regions of FinFET devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 4781US2025287636A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4880US10950725B2Epitaxial source/drain structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·1 cites·20 claims
- 4980US2024395625A1FinFET Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5080US2023369491A1Doping profile for strained source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 123 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →