Inventor · disambiguated record
Kuo-Feng Lo
Also filed as: LO KUO-FENG
9 granted patents·1 pending application·19 citations·filing 2005–2022
80Inventor score
Top patents by PatentIndex Score
10 records- 0189US7744953B2Method for forming self-cleaning coating comprising hydrophobically-modified particlesIND TECH RES INST·Filed 2005·Granted Jun 29, 2010·11 cites·22 claims
- 0285US7744952B2Method for forming coating material and the material formed therebyIND TECH RES INST·Filed 2005·Granted Jun 29, 2010·6 cites·19 claims
- 0368US9425086B2Method of controlling contact hole profile for metal fill-inMACRONIX INT CO LTD·Filed 2013·Granted Aug 23, 2016·2 cites·20 claims
- 0466US11996464B2Method of fabricating diode structureJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2022·Granted May 28, 2024·0 cites·9 claims
- 0560US11362192B2Method of fabricating diode structureJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·11 claims
- 0659US11488820B2Method of fabricating layered structureJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·7 claims
- 0753US10903069B2Method of fabricating layered structureJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2019·Granted Jan 26, 2021·0 cites·12 claims
- 0850US11258013B2Method of manufacturing phase change memoryJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·10 claims
- 0948US11302866B2Method of manufacturing phase change memory and phase change memoryJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2020·Granted Apr 12, 2022·0 cites·10 claims
- 1042US2021376186A1Diode structure and method of fabricating the sameJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →