Inventor · disambiguated record
Kuo-Hua Pan
Also filed as: PAN KUO-HUA
100 granted patents·33 pending applications·287 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD122TAIWAN SEMICONDUCTOR MFG8CHENG HONG-CHEN1PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC1TAIWAN SEMOCONDUCTOR MFG CO LTD1
Top patents by PatentIndex Score
133 records- 0199US11302692B2Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·8 cites·16 claims
- 0296US11996320B2Reducing parasitic capacitance in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 0396US11923413B2Semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 0496US11908735B2Vias for cobalt-based interconnects and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
- 0596US11742349B2Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·2 cites·20 claims
- 0696US11245005B2Method for manufacturing semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·3 cites·20 claims
- 0796US10074558B1FinFET structure with controlled air gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 11, 2018·18 cites·20 claims
- 0895US11923194B2Epitaxial blocking layer for multi-gate devices and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 0994US12087844B2Semiconductor device structure with uniform threshold voltage distribution and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·1 cites·20 claims
- 1094US9882023B2Sidewall spacers for self-aligned contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·16 cites·20 claims
- 1193US11101359B2Gate-all-around (GAA) method and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·6 cites·20 claims
- 1292US10516030B2Contact plugs and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·10 cites·20 claims
- 1391US11282705B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·2 cites·20 claims
- 1491US6444544B1Method of forming an aluminum protection guard structure for a copper metal structureTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Sep 3, 2002·76 cites·23 claims
- 1590US10872980B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 22, 2020·6 cites·20 claims
- 1689US11362096B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·2 cites·20 claims
- 1789US10741558B2Nanosheet CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 11, 2020·5 cites·20 claims
- 1888US11545573B2Hybrid nanostructure and fin structure deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 3, 2023·3 cites·20 claims
- 1988US10553481B2Vias for cobalt-based interconnects and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 4, 2020·4 cites·20 claims
- 2088US6380021B1Ultra-shallow junction formation by novel process sequence for PMOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·49 cites·19 claims
- 2188US2025324688A1Semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2287US12389645B2Semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 2387US2025323091A1Isolation with multi-step structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2487US2025359131A1Hybrid Nanostructure and Fin Structure DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2586US10930752B2Contact plugs and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 23, 2021·4 cites·19 claims
- 2685US12444649B2Vias for cobalt-based interconnects and methods of fabrication thereofPARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2024·Granted Oct 14, 2025·0 cites·19 claims
- 2785US12412777B2Reducing parasitic capacitance in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 2885US10854506B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·4 cites·20 claims
- 2985US10134873B2Semiconductor device gate structure and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 20, 2018·3 cites·20 claims
- 3085US7754571B2Method for forming a strained channel in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jul 13, 2010·11 cites·20 claims
- 3184US11315785B2Epitaxial blocking layer for multi-gate devices and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·2 cites·20 claims
- 3284US2025294871A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3383US10403737B2Method of forming a gate structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 3, 2019·2 cites·20 claims
- 3483US2025316529A1Reducing parasitic capacitance in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3582US11721763B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·1 cites·20 claims
- 3682US11515199B2Semiconductor structures including standard cells and tap cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 29, 2022·2 cites·20 claims
- 3782US11037831B2Gate structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 15, 2021·1 cites·20 claims
- 3882US2024363731A1Semiconductor Device Structure With Uniform Threshold Voltage Distribution and Method of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3981US12394663B2Isolation with multi-step structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
- 4081US12080607B2Structure and method for FinFET device with source/drain modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 4180US12324235B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 4280US12183810B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 4380US12051695B2Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 4480US11152488B2Gate-all-around structure with dummy pattern top in channel region and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·2 cites·20 claims
- 4580US2025081602A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4680US2025081497A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4779US12266653B2Semiconductor structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 4879US12183735B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 4979US2024355896A1Methods of forming gate-all-around (gaa) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5079US2024363435A1Structure and method for finfet device with source/drain modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 133 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →